Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MPA201
0.5 Watts, 12.5 Volts, Class A
Linear to 500MHz
Hybrid Amplifier
GENERAL DESCRIPTION
The MPA201 is a common emitter amplifier device designed for broadband
performance to 500MHz in a format suitable for microstrip assembly and high
reliability applications. Its wide dynamic rage and flexibility make it suitable for a
broad spectrum of instrumentation, receiver, and transmitter applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and supreme
ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C 6.0 Watts
BV
CES
Collector to Emitter Voltage 40 Volts
BV
EBO
Emitter to Base Voltage 3.5 Volts
I
C
Collector Current 300 mA
Storage Temperature -55 to +150 °C
Operating Junction Temperature +200 °C
CASE OUTLINE
55AU, Style 2
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
OUT
Power Out 0.5 - - W
P
IN
Power Input - - 0.032 W
G
P
Power Gain 12 13 - dB
F
T
Transition Frequency 2.0 GHz
VSWR Load Mismatch Tolerance
F = 500 MHz
V
CE
= 12.5V
I
C
= 140mA
- - 30:1 -
I
CQ
Quiescent Collector Current V
CE
= 12.5V 140 mA
θjc
1
Junction-Case Thermal Resistance 33 °C/W
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MPA201
ELECTRICAL CHARACTERISTICS OF SINGLE DIE
2
@ 25°
°°
°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
BV
EBO
Emitter to Base Breakdown I
E
= 1 mA 3.5 - - V
BV
CES
Collector to Emitter Breakdown I
C
= 10 mA 50 - - V
BV
CEO
Collector to Emitter Breakdown I
C
= 10 mA 22 - - V
h
FE
DC – Current Gain I
C
= 100 mA, V
CE
= 5 V 20 - - -
C
OB
Output Capacitance F = 1MHz, V
CB
= 28V - 2.0 3.0 pF
NOTES: 2. Electrical characteristics are valid only with the single die inside of MPA201, the final unit is not capable of being tested.
Internal Schematic of MPA201
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MPA201
MPA201 Test Circuit Layout @ 500MHz
MPA201 Test Circuit Component Designations and Values @ 500MHz
Part Description Part Description
C1, C2,
C3 100pF Chip Capacitor (ATC 600F) C4 10000pF Chip Capacitor (ATC 200B)
C5 47uF 63V Electrolytic Capacitor C6, C7 5.6pF Chip Capacitor (ATC 600F)
L1 18AWG, 10Turns, Dia: 0.5″ PCB RT6006, ε
r
=6.15, 25mils, 1oz
M1 35 x 155 mils (W x L) M2 35 x 465 mils (W x L)
M3 35 x 250 mils (W x L) M4 35 x 1000 mils (W x L)
M5 35 x 250 mils (W x L) M6 35 x 500 mils (W x L)
M7 35 x 500 mils (W x L) M8 35 x 500 mils (W x L)
M9 35 x 500 mils (W x L) M10 35 x 250 mils (W x L)
M11 35 x 1000 mils (W x L) M12 35 x 250 mils (W x L)
M13 35 x 465 mils (W x L) M14 35 x 395 mils (W x L)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
MPA201
