The IRKCS401.. Schottky rectifier doubler module has been optimized for
low reverse leakage at high temperature. The proprietary barrier technology
allows for reliable operation up to 175°C junction temperature. Typical
applications are in high current switching power supplies, plating power
supplies, UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175°C TJ operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
UL pending
TOTALLY LEAD-FREE, RoHS Compliant
Description/ Features
Major Ratings and Characteristics
IF(AV) Rectangular 400 A
waveform
VRRM 45 V
IFSM @ tp = 5 μs sine 25000 A
VF@ 200Apk, TJ=125°C 0.63 V
TJrange - 55 to 175 °C
Characteristics Values Units
SCHOTTKY RECTIFIER
IRKCS401/045P
400 Amp
Bulletin I27257 09/06
1
Outline TO-240AA
www.irf.com
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
-
-
+
(1)
(2)
(3)
IRKCS401/045P
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Bulletin I27257 09/06
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IF(AV) Max. Average Forward Per Module 400 A 50% duty cycle @ TC = 119 °C, rectangular wave form
Current Per Leg 200
IFSM Max. Peak One Cycle Non-Repetitive 25000 5μs Sine or 3μs Rect. pulse
Surge Current 3450 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 270 mJ TJ = 25 °C, IAS
= 24 Amps, L = 1mH
IAR Repetitive Avalanche Current 40 A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Parameters IRKCS401/045P
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
Parameters Values Units Conditions
A
(1) Pulse Width < 500μs
TJMax. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range -55 to 175 °C
RthJC Max. Thermal Resistance, Junction 0.30 °C/W DC operation
to Case (Per Leg)
RthCS Max. Thermal Resistance, case 0.1 °C/W Mounting Surface, smooth and greased
to Heatsink
wt Approximate Weight 110 (4) gr (oz)
T Mounting Torque ± 10% to heatsink 5 Nm
busbar 4
Case Style TO - 240AA JEDEC
Thermal-Mechanical Specifications
Parameters Values Units Conditions
VFM Max. Forward Voltage Drop 0.67 V @ 200A
(1) 0.63 V @ 400A
0.87 V @ 200A
0.86 V @ 400A
IRM Max. Reverse Leakage Current 20 mA TJ = 25 °C
(1) 180 mA TJ = 125 °C
CTMax. Junction Capacitance 10300 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 5.0 nH From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change 10000 V/ μs (Rated VR)
VINS RMS isolation voltage (1 sec) 3500 V 50 Hz, circuit to base, all terminals shorted
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Parameters Values Units Conditions
Electrical Specifications
45
IRKCS401/045P
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Bulletin I27257 09/06
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Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - IF (A)
Reverse Current - IR (mA)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - CT (pF)
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance ZthJC (°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
0.0 0.3 0.6 0.9 1.2 1.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
0.001
0.01
0.1
1
10
100
1000
10000
0 1020304050
125˚C
100˚C
75˚C
50˚C
25˚C
150˚C
T = 175˚C
J
1000
10000
0 102030405060
T = 25˚C
J
IRKCS401/045P
4
Bulletin I27257 09/06
www.irf.com
Fig. 8 - Unclamped Inductive Test Circuit
FREE- W HEEL
DIODE
40HFL40S02
CURRENT
MONITOR
HIG H-SPEED
SWITCH
IRFP460
L
DUT
Rg = 25 o h m
Vd = 25 Volt
+
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics
Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A)
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
Non-Repetitive Surge Current - IFSM (A)
0100 200 300 400 500 60
0
0
20
40
60
80
100
120
140
160
180
DC
Square wave (D=0.50)
80% rated Vr applied
see note (2)
0 50 100 150 200 250 300
0
50
100
150
200
180°
120°
90°
60°
30° DC
1000
10000
100000
10 100 1000 10000
At Any Rated Load Condition
And With Rated V Applied
Following Surge RRM
IRKCS401/045P
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Bulletin I27257 09/06
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Outline Table
Dimensions are in millimeters and [inches]
Ordering Information Table
IR KC S 40 1 / 045 P
Device Code
15
24
3
1- International Rectifier
2- Circuit Configuration
KC = Add-A-Pak - 2 diodes/common cathode
3- S = Schottky Diode
4- Average Rating (x10)
5- Product Silicon Identification
6- Voltage Rating (045 = 45V)
7- Lead-Free
67
IRKCS401/045P
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Bulletin I27257 09/06
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
