Spec.No.IGBT-SP-06038R1 P1 IGBT MODULE MBN1200E17E Silicon N-channel IGBT 1700V E version 1. FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low input capacitance advanced trench gate. Low noise recovery: Ultra soft fast recovery diode. High thermal fatigue durability:(delta Tc=70K, N 30,000cycles) AlSiC base-plate/AlN substrate. o 2. ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Collector Emitter Voltage Gate Emitter Voltage DC 1ms DC 1ms Collector Current Forward Current Total Power dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes: (M4) (M8) (M6) +0.1 Symbol Unit MBN1200E17E VCES VGES IC ICp IF IFM Ptot Tj Tstg VISO - V V 1,700 20 1,200 2,400 1,200 2,400 5.5 -40 ~ +125 -40 ~ +125 4,000 (AC 1 minute) (1) 2 (1) 15 (2) 5 A A kW o C o C VRMS N*m +0 -3N*m (1) Recommended Value 2.0 -0.2 / 15 (2) Recommended Value 5.01N*m * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ Spec.No.IGBT-SP-06038R1 P2 IGBT MODULE MBN1200E17E 3. ELECTRIC CHARACTERISTICS Item Symbol Unit Collector Emitter Cut-Off Current I CES mA Gate Emitter Leakage Current IGES nA Collector Emitter Saturation Voltage VCE(sat) V Gate Emitter Threshold Voltage Input Capacitance Reverse transfer Capacitance Output Capacitance Total Gate Charge VGE(TO) Cies Cres Coes QG V nF nF nF C Turn-on Gate Charge QG(on) C Internal Gate Resistance (Tentative) Rise Time Turn On Time Switching Times Fall Time Turn Off Time Rge(int) tr ton tf toff Peak Forward Voltage Drop Reverse Recovery Time Turn On Loss Turn Off Loss Reverse Recovery Loss Reverse Recovery Peak Current RBSOA Recovery SOA 2 I t value Partial Discharge Extinction Voltage Notes : s VFM V trr Eon(10%) Eon(Full) Eoff(10%) Eoff(Full) Err(10%) Err(Full) IRRM Ic IF 2 It VPDoff s J/P J/P J/P J/P J/P J/P A A A 2 kA s VRMS Min. Typ. Max. -500 1.7 5.0 0.5 1.0 0.5 1.0 1.4 0.3 2400 2400 1.3 14 2.0 2.2 6.5 100 6 11 7 3.3 4.3 2.0 1.1 2.0 1.0 2.1 1.8 1.9 0.7 0.28 0.36 0.8 0.9 0.4 0.5 1000 450 - 10 35 +500 2.7 8.0 2.2 4.0 2.0 4.2 2.5 1.4 0.42 (0.54) 1.2 (1.35) 0.6 (0.75) - Test Conditions o VCE=1,700V, VGE=0V, Tj=25 C o VCE=1,700V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1,200A, VGE=15V, Tj=25 C o IC=1,200A, VGE=15V, Tj=125 C o VCE=10V, IC=120mA, Tj=25 C VCE=10V, VGE=0V o f=100kHz, Tj=25 C VGE=15V, Vcc=900V, Ic=1,200A VGE=-15V 0V, Vcc=900V, Ic=1,200A VGE=-15V 8V, Vcc=900V, Ic=1,200A o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=900V, Ic=1,200A, L=100nH RG(on/off)=6.8/1.5 o VGE=15V, Tj=125 C (3) o IF=1,200A, VGE=0V, Tj=25 C o IF=1,200A, VGE=0V, Tj=125 C VCC=900V, Ic=1,200A L=100nH RG(on/off)=6.8/1.5 (3) o VGE=15V, Tj=125 C VCC=1100V,L=100nH,RG(on/off)=6.8/1.5 o VGE=15V, Tj=125 C o Tj,start=125 C, 10ms, VR=0V Q=10pC, 50Hz, (3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. 4. THERMAL CHARACTERISTICS Item Thermal Resistance Symbol Unit IGBT FWD Contact Thermal Impedance Min. Rth(j-c) Rth(j-c) K/W - Rth(c-f) K/W - Typ. Max. - Test Conditions 0.018 Junction to case 0.023 Case to fin. Thermal grease applied. 0.008 Thickness 100m, Thermal conductivity of grease: 1W/mK http://store.iiic.cc/ (3) Spec.No.IGBT-SP-06038R1 P3 IGBT MODULE MBN1200E17E 5. MODULE MECHNICAL CHARACTERISTICS Item Weight Creeping Distance Clearance Distance Stray inductance in module Terminal Resistance Comparative Tracking Index Module base plate Material Baseplate Thickness Insulation Material Terminal Surface treatment Case Material Fire and Smoke Category Between terminal Terminal-Base Between terminal Terminal-Base LS(CM-EM) LS(ES-EM) LS(CM-CS) RTerminal (CTI) Unit Characteristics g mm mm mm mm 900 49 33 22 25 18 5.7 9.6 0.14 600 Al-SiC 5 Al N Ni plating nH m mm Conditions Collector-main to Emitter-main Emitter-sense to Emitter-main Collector-main to Collector sense Collector-main to Emitter-main Poly-Phenilene Sulfide I2 / F3 6. CIRCUIT DIAGRAM C C E E C G E CIRCUIT DIAGRAM http://store.iiic.cc/ NFF 16-102 Spec.No.IGBT-SP-06038R1 P4 IGBT MODULE MBN1200E17E 7. CHARACTERISTICS CURVE 7.1 STATIC CHARACTERISTICS TYPICAL TYPICAL VGE=15V 13V 2000 Tc=25 1800 2000 Tc=125 1800 13V 1600 1400 11V 1200 1000 800 Collector Current IC (A) 1600 Collector Current IC (A) VGE=15V 1400 1200 11V 1000 600 800 600 400 400 9V 9V 200 200 7V 0 0 1 2 3 4 5 0 Collector-Emitter Voltage VCE (V) Tc=25 Tc=125 1600 Forward Current IF (A) 1400 1200 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 2.5 2 3 4 5 Collector Current vs. Collector to Emitter Voltage TYPICAL 1800 1 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector to Emitter Voltage 2000 7V 0 3.0 Forward Voltage VF (V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ Spec.No.IGBT-SP-06038R1 P5 IGBT MODULE MBN1200E17E TYPICAL TYPICAL 20 1000 f=100kHz,Tc=25 15 Cies 10 Cies, Coes, Cres (nF) VGE (V) 100 5 0 Coes 10 -5 Cres -10 1 -15 -4 -2 0 2 4 6 0.1 1 10 VCE (V) QG (uC) Cies, Coes, Cres vs. Vce QG-VGE curve http://store.iiic.cc/ 100 Spec.No.IGBT-SP-06038R1 P6 IGBT MODULE MBN1200E17E 7.2 DYNAMIC CHARACTERISTICS 7.2.1 CIRCUIT Ls=100nH LLOAD Ic Vce Ls= VL Vcc Rg(on/off)=6.8/1.5 t 0 VL dIc d t=tL ( ) tL Definition of Ls 7.2.2 WAVEFORM DEFINITION Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% tr ton t3 t4 t t t2 0 0 10% IcVce dt 90% t5 t7 t1 t8 trr IF -Ic t6 t9 t8 Eoff(10%)= IcVce dt Err(10%)= IcVce dt t5 Definition of switching loss http://store.iiic.cc/ t12 t10 IFVce dt t11 t6 Eoff(Full)= t11 t12 t7 t2 IcVce dt t tf toff t3 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 Spec.No.IGBT-SP-06038R1 P7 IGBT MODULE MBN1200E17E 7.2.3 DEPENDENCE OF CURRENT TYPICAL 1 Conditions Tc=125 Vcc=900V L=100nH RG(on/off)=6.8/1.5 VG=15V Inductive Load Conditions Tc=125 Vcc=900V L=100nH RG(on/off)=6.8/1.5 VG=15V Inductive Load 0.8 Turn-off Loss Eoff (J/pulse) 0.8 Turn-on Loss Eon (J/pulse) TYPICAL 1 0.6 Eon(Full) 0.4 Eoff(Full) Eoff(10%) 0.6 0.4 Eon(10%) 0.2 0.2 0 0 0 200 400 600 800 Collector Current 1000 Ic (A) 1200 1400 0 Turn-on Loss vs. Collector Current 400 600 800 Collector Current 1000 Ic (A) 1200 1400 Turn-off Loss vs. Collector Current TYPICAL TYPICAL 3.5 1 Conditions Tc=125 Vcc=900V L=100nH RG(on/off)=6.8/1.5 VG=15V Inductive Load 0.8 200 Conditions Tc=125 Vcc=900V L=100nH RG(on/off)=6.8/1.5 VG=15V Inductive Load 3 Switching Time ton,tr,toff,tf,trr (s) Reverse Recovery Loss Err (J/pulse) 2.5 0.6 Err(Full) 0.4 Err(10%) toff 2 ton 1.5 tr 1 tf 0.2 trr 0.5 0 0 0 200 400 600 800 Forward Current 1000 1200 1400 IF (A) Reverse Recovery Loss vs. Forward Current 0 200 400 600 800 Collector Current 1000 Ic (A) 1200 Switching Time vs. Collector Current http://store.iiic.cc/ 1400 Spec.No.IGBT-SP-06038R1 P8 IGBT MODULE MBN1200E17E 7.2.4 DEPENDENCE OF RG TYPICAL TYPICAL 1.4 1.4 Conditions Tc=125 Vcc=900V Ic=1200A L=100nH VG=15V Inductive Load 1.2 1.2 Eoff(Full) Eon (J/pulse) 1 0.8 Eon(Full) Turn-off Loss Turn-on Loss Eon (J/pulse) 1 0.6 0.4 0.8 Eoff(10%) 0.6 0.4 Eon(10%) 0.2 0.2 0 0 0.0 2.0 4.0 6.0 8.0 10.0 Gate Resistance Rg () 12.0 14.0 Turn-on Loss vs. Gate Resistance TYPICAL Conditions Tc=125 Vcc=900V IF=1200A L=100nH VG=15V Inductive Load 1.2 1 0.8 0.6 Err(Full) 0.4 Err(10%) 0.2 0 0.0 2.0 4.0 6.0 Gate Resistance 8.0 10.0 0.0 2.0 4.0 6.0 8.0 10.0 Gate Resistance Rg () 12.0 Turn-off Loss vs. Gate Resistance 1.4 Reverse Recovery Loss Err (J/pulse) Conditions Tc=125 Vcc=900V Ic=1200A L=100nH VG=15V Inductive Load 12.0 14.0 Rg () Reverse Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 14.0 Spec.No.IGBT-SP-06038R1 P9 IGBT MODULE MBN1200E17E 8. PACKAGE OUTLINE DRAWING l e b a L http://store.iiic.cc/ Spec.No.IGBT-SP-06038R1 P10 IGBT MODULE MBN1200E17E 9. Thermal Impedance 9.1 TRANSIENT THERMAL IMPEDANCE Transient thermal impedance Zth(j-c)(K/W) 0.1 Diode IGBT 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Time t(s) Transient Thermal Impedance Curve (Maximum Value) 10. Negative environmental impact material Please note the following materials are contained in the product in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. 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