MBN1200E17E - Hitachi - Datasheet.Live

IGBT MODULE Spec.No.IGBT-SP-06038R1 P1

MBN1200E17E

Silicon N-channel IGBT 1700V E version

1. FEATURES

∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT.

∗ Low driving power: Low input capacitance advanced trench gate.

∗ Low noise recovery: Ultra soft fast recovery diode.

∗ High thermal fatigue durability:(delta Tc=70K, N

＞

30,000cycles)

∗AlSiC base-plate/AlN substrate.

2. ABSOLUTE MAXIMUM RATINGS (Tc=25

o

C )

Item Symbol Unit MBN1200E17E

Collector Emitter Voltage V

CES

V 1,700

Gate Emitter Voltage V

GES

V ±20

DC I

C

1,200

Collector Current 1ms I

Cp

A 2,400

DC I

F

1,200

Forward Current 1ms I

FM

A 2,400

Total Power dissipation Ptot kW 5.5

Junction Temperature T

j

o

C -40 ~ +125

Storage Temperature Tstg

o

C -40 ~ +125

Isolation Voltage V

ISO

V

RMS

4,000 (AC 1 minute)

(M4) - 2

(1)

Terminals

(M8) - 15

(1)

Screw Torque

Mounting

(M6) -

N·m

5

(2)

Notes: (1) Recommended Value 2.0

+0.1

-0.2

/ 15

+0

-3

N·m

(2) Recommended Value 5.0±1N·m

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P2

MBN1200E17E

3. ELECTRIC CHARACTERISTICS

Item Symbol

Unit

Min.

Typ.

Max.

Test Conditions

- - 10 V

CE

=1,700V, V

GE

=0V, Tj=25

o

C

Collector Emitter Cut-Off Current I

CES

mA - 14

35 V

CE

=1,700V, V

GE

=0V, Tj=125

o

C

Gate Emitter Leakage Current I

GES

nA -500

- +500

V

GE

=±20V, V

CE

=0V, Tj=25

o

C

- 2.0

- I

C

=1,200A, V

GE

=15V, Tj=25

o

C

Collector Emitter Saturation Voltage V

CE

(sat)

V 1.7

2.2

2.7 I

C

=1,200A, V

GE

=15V, Tj=125

o

C

Gate Emitter Threshold Voltage V

GE

(TO)

V 5.0

6.5

8.0 V

CE

=10V, I

C

=120mA, Tj=25

o

C

Input Capacitance C

ies

nF - 100

-

Reverse transfer Capacitance C

res

nF - 6 -

Output Capacitance C

oes

nF - 11

-

V

CE

=10V, V

GE

=0V

f=100kHz, Tj=25

o

C

Total Gate Charge Q

G

µC - 7 - V

GE

=±15V, Vcc=900V, Ic=1,200A

- 3.3

- V

GE

=-15V

→

0V, Vcc=900V, Ic=1,200A

Turn-on Gate Charge QG(on)

µC - 4.3

- V

GE

=-15V

→

8V, Vcc=900V, Ic=1,200A

Internal Gate Resistance

(Tentative)

R

ge(int)

Ω

- 2.0

- V

CE

=10V, V

GE

=0V, f=100kHz, Tj=25

o

C

Rise Time t

r

0.5

1.1

2.2

Turn On Time t

on

1.0

2.0

4.0

Fall Time t

f

0.5

1.0

2.0

Switching Times

Turn Off Time t

off

µs

1.0

2.1

4.2

V

CC

=900V, Ic=1,200A, L=100nH

R

G

(on/off)=6.8/1.5Ω

(3)

V

GE

=±15V, Tj=125

o

C

- 1.8

- IF=1,200A, V

GE

=0V, Tj=25

o

C

Peak Forward Voltage Drop V

FM

V 1.4

1.9

2.5 IF=1,200A, V

GE

=0V, Tj=125

o

C

Reverse Recovery Time t

rr

µs 0.3

0.7

1.4

E

on(10%)

J/P - 0.28

0.42

Turn On Loss E

on(Full)

J/P - 0.36

(0.54)

E

off(10%)

J/P - 0.8

1.2

Turn Off Loss E

off(Full)

J/P - 0.9

(1.35)

E

rr(10%)

J/P - 0.4

0.6

Reverse Recovery Loss E

rr(Full)

J/P - 0.5

(0.75)

Reverse Recovery Peak Current I

RRM

A - 1000

-

V

CC

=900V, Ic=1,200A

L=100nH

R

G

(on/off)=6.8/1.5Ω

(3)

V

GE

=±15V, Tj=125

o

C

RBSOA Ic A 2400

- -

Recovery SOA I

F

A 2400

- -

V

CC

=1100V,L=100nH,R

G

(on/off)=6.8/1.5Ω

(3)

V

GE

=±15V, Tj=125

o

C

I

2

t value I

2

t kA

2

s

- 450

- T

j,start

=125

o

C, 10ms, V

R

=0V

Partial Discharge Extinction Voltage V

PDoff

V

RMS

1.3

- - Q=10pC, 50Hz,

Notes :

(3) R

G

value is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R

G

value after the measurement of switching waveforms (overshoot voltage, etc.) with

appliance mounted.

4. THERMAL CHARACTERISTICS

Item Symbol

Unit

Min.

Typ.

Max.

Test Conditions

IGBT Rth(j-c)

- - 0.018

Thermal Resistance FWD Rth(j-c)

K/W

- - 0.023

Junction to case

Contact Thermal Impedance

Rth(c-f)

K/W

- 0.008

-

Case to fin. Thermal grease applied.

Thickness 100µm,

Thermal conductivity of grease: 1W/mK

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P3

MBN1200E17E

5. MODULE MECHNICAL CHARACTERISTICS

Item Unit

Characteristics Conditions

Weight g 900

Between terminal

mm

49

Creeping Distance Terminal-Base mm

33

Between terminal

mm

22

Clearance Distance Terminal-Base mm

25

L S ( C M - E M ) 18 Collector-main to Emitter-main

L S ( E S - E M ) 5.7 Emitter-sense to Emitter-main

Stray inductance in module

L S ( C M - C S )

nH

9.6 Collector-main to Collector sense

Terminal Resistance R

Terminal

mΩ 0.14 Collector-main to Emitter-main

Comparative Tracking Index (CTI) 600

Module base plate Material Al-SiC

Baseplate Thickness mm

5

Insulation Material Al N

Terminal Surface treatment Ni plating

Case Material

Poly-Phenilene Sulfide

Fire and Smoke Category I2 / F3 NFF 16-102

6. CIRCUIT DIAGRAM

CIRCUIT DIAGRAM

E E

E

G

C

C C

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P4

MBN1200E17E

7. CHARACTERISTICS CURVE

7.1 STATIC

CHARACTERISTICS

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage VF (V)

Forward Current IF (A)

Tc=25

℃

℃℃

℃

Tc=125

℃

℃℃

℃

TYPICAL

Forward Voltage of free-wheeling diode

0

200

400

600

800

1000

1200

1400

1600

1800

2000

012345

Collector-Emitter Voltage VCE (V)

Collector Current IC (A)

VGE=15V 13V

11V

7V

Tc=125

℃

℃℃

℃

9V

TYPICAL

Collector Current vs. Collector to Emitter Voltage

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 1 2 3 4 5

Collector-Emitter Voltage VCE (V)

Collector Current IC (A)

Tc=25

℃

℃℃

℃

VGE=15V 13V

11V

7V

9V

TYPICAL

Collector Current vs. Collector to Emitter Voltage

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P5

MBN1200E17E

1

10

100

1000

0.1 1 10 100

VCE (V)

Cies, Coes, Cres (nF)

f=100kHz,Tc=25

℃

TYPICAL

Cies

Coes

Cres

Cies, Coes, Cres vs. Vce

-15

-10

-5

0

5

10

15

20

-4 -2 0 2 4 6

QG (uC)

VGE (V)

TYPICAL

QG-VGE curve

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P6

MBN1200E17E

7.2 DYNAMIC

CHARACTERISTICS

7.2.1 CIRCUIT

Vcc

Ls=100nH

L

LOAD

Rg(on/off)=6.8/1.5Ω

Definition of Ls

Ic

t

0

VL

tL

Vce

t=t

L

Ls=

V

L

dIc

d

ｔ

(

)

7.2.2 WAVEFORM DEFINITION

Definition of switching loss

t4

t3

Ic

ton

tr

Vge

10%

90%

Vce

t

0

t

0

t1

t2

t5

90%

Vge

Vce

Ic

10%

toff

tf

t8

t7

t0

t6

0.1IF

t9

t10

Vce

0.1Vce

0.5Irm

Irm

-Ic

trr

t12

t11

t

0

IF

Eon(10%)=

∫

Ic

･

Vce dt

t4

t3

Eon(Full)=

∫

Ic

･

Vce dt

t2

t1

Eoff(10%)=

∫

Ic

･

Vce dt

t8

t7

Eoff(Full)=

∫

Ic

･

Vce dt

t6

t5

t12

t11

Err(10%)=

∫

IF

･

Vce dt

Err(Full)=

∫

IF

･

Vce dt

t10

t9

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P7

MBN1200E17E

7.2.3 DEPENDENCE OF CURRENT

0

0.5

1

1.5

2

2.5

3

3.5

0 200 400 600 800 1000 1200 1400

Collector Current Ic (A)

【

Conditions

】

Tc=125

℃

Vcc=900V

L=100nH

RG(on/off)=6.8/1.5Ω

VG=±15V

Inductive Load

TYPICAL

Switching Time vs. Collector Current

Switching Time ton,tr,toff,tf,trr (µs)

toff

ton

tr

tf

trr

0

0.2

0.4

0.6

0.8

1

0 200 400 600 800 1000 1200 1400

Forward Current IF (A)

Reverse Recovery Loss Err (J/pulse)

【

Conditions

】

Tc=125

℃

Vcc=900V

L=100nH

RG(on/off)=6.8/1.5Ω

VG=±15V

Inductive Load

TYPICAL

Reverse Recovery Loss vs. Forward Current

Err(Full)

Err(10%)

0

0.2

0.4

0.6

0.8

1

0 200 400 600 800 1000 1200 1400

Collector Current Ic (A)

Turn-off Loss Eoff (J/pulse)

Eoff(Full)

Eoff(10%)

【

Conditions

】

Tc=125

℃

Vcc=900V

L=100nH

RG(on/off)=6.8/1.5Ω

VG=±15V

Inductive Load

TYPICAL

Turn-off Loss vs. Collector Current

0

0.2

0.4

0.6

0.8

1

0 200 400 600 800 1000 1200 1400

Collector Current Ic (A)

Turn-on Loss Eon (J/pulse)

Eon(Full)

Eon(10%)

【

Conditions

】

Tc=125

℃

Vcc=900V

L=100nH

RG(on/off)=6.8/1.5Ω

VG=±15V

Inductive Load

TYPICAL

Turn-on Loss vs. Collector Current

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P8

MBN1200E17E

7.2.4 DEPENDENCE OF RG

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0

Gate Resistance Rg (Ω)

Reverse Recovery Loss Err (J/pulse)

【

Conditions

】

Tc=125

℃

Vcc=900V

IF=1200A

L=100nH

VG=±15V

Inductive Load

TYPICAL

Reverse Recovery Loss vs. Gate Resistance

Err(Full)

Err(10%)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0

Gate Resistance Rg (Ω)

【

Conditions

】

Tc=125

℃

Vcc=900V

Ic=1200A

L=100nH

VG=±15V

Inductive Load

TYPICAL

Turn-off Loss vs. Gate Resistance

Eoff(Full)

Eoff(10%)

Turn-off Loss Eon (J/pulse)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0

Gate Resistance Rg (Ω)

Turn-on Loss Eon (J/pulse)

【

Conditions

】

Tc=125

℃

Vcc=900V

Ic=1200A

L=100nH

VG=±15V

Inductive Load

TYPICAL

Turn-on Loss vs. Gate Resistance

Eon(Full)

Eon(10%)

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P9

MBN1200E17E

8. PACKAGE OUTLINE DRAWING

L

a

b

e

l

L

a

b

e

l

L

a

b

e

l

L

a

b

e

l

http://store.iiic.cc/

IGBT MODULE Spec.No.IGBT-SP-06038R1 P10

MBN1200E17E

9. Thermal Impedance

9.1 TRANSIENT THERMAL IMPEDANCE

10. Negative environmental impact material

Please note the following materials are contained in the product in order to keep

characteristic and reliability level.

Material Contained part

Lead (Pb) and its compounds Solder

Arsenic and its compounds Si chip

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Time t(s)

IGBT

Diode

Transient thermal impedance Zth(j-c)(K/W)

Transient Thermal Impedance Curve

(Maximum Value)

http://store.iiic.cc/

1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are advised to contact Hitachi sales department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual

brochure before use.

3. In cases where extremely high reliability is required (such as use in nuclear power

control, aerospace and aviation, traffic equipment, life-support-related medical

equipment, fuel control equipment and various kinds of safety equipment), safety should

be ensured by using semiconductor devices that feature assured safety or by means of

users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department

staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data sheets.

Hitachi assumes no responsibility for any intellectual property claims or any other

problems that may result from applications of information, products or circuits described

in this data sheets.

5. In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum

rating.

6. No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8. The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures

are to be taken in accordance with related laws and regulations.

 For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

HITACHI POWER SEMICONDUCTORS

Notices

Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/

http://store.iiic.cc/