KSD-O2Q002-000 2
SI5313-H / SI5313-H
B
Absolute Maximum Ratings (Ta=25℃)
Characteristic Symbol Rating Unit
Power dissipation PD 145 mW
Forward current IF 100 mA
*1Peak forward current IFP 1 A
Reverse voltage VR 4 V
Operating temperature range Topr -25 85∼ ℃
Storage temperature range Tstg -30 1∼00 ℃
*2Soldering temperature Tsol 260 for ℃10 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical / Optical Characteristics (Ta=25℃)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F= 50mA - 1.3 1.45 V
Radiant intensity IE IF= 50mA 10 25 - mW/Sr
Peak wavelength λP IF= 50mA - 950 - nm
Spectrum bandwidth ∆λ IF= 50mA - 50 - nm
Reverse current IR VR=4V - - 10 uA
*3Half angle θ1/2 IF= 50mA - ±30 - deg
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity