33
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A)
Application : Audio Output Driver and TV Velocity-modulation
2SA1859/1859A
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–1
–2
–2 –4 –6 –10–8
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–100mA
I
B
=–5mA
–60mA
–30mA
–15mA
–10mA
0
–3
–2
–1
–2 –5 –10 –50 –100 –500–1000
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
–0.5A –1A
IC=–2A
–0.01 –0.1 –0.5 –1 –2
50
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–10 –50–5 –100 –200
–0.01
–0.1
–0.5
–1
–1
–5
–0.5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
1.2SA1859
2.2SA1859A
DC
100ms
10ms
1ms
12
0.01 0.10.05 0.5 1 2
0
20
60
40
80
100
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
7
1
5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–2
–1
0–1–0.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (CaseTemp)
25˚C (CaseTemp)
–30˚C (CaseTemp)
(VCE=–4V)
–0.01 –0.1 –0.5 –1 –2
50
100
300
DC Current Gain hFE
125˚C
25˚C
–30˚C
Collector Current IC(A)