74LV00 Quad 2-input NAND gate Rev. 4 -- 9 December 2015 Product data sheet 1. General description The 74LV00 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC00 and 74HCT00. The 74LV00 provides a quad 2-input NAND function. 2. Features and benefits Wide operating voltage: 1.0 V to 5.5 V Optimized for low voltage applications: 1.0 V to 3.6 V Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 C Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 C ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LV00D 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 74LV00DB 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 74LV00PW 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 74LV00BQ 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2.5 3 0.85 mm SOT762-1 74LV00 Nexperia Quad 2-input NAND gate 4. Functional diagram $ % < $ % < $ % < $ % < $ < % PQD Fig 1. PQD Logic symbol Fig 2. PQD IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning $ WHUPLQDO LQGH[DUHD 9&& /9 % % < $ $ $ < < % % < % < $ % < $ % *1' < < 9&& *1' $ 9&& % $ DDK 7UDQVSDUHQWWRSYLHZ DDF (1) This is not a supply pin. The substrate is attached to this pad using conductive die attach material. There is no electrical or mechanical requirement to solder this pad. However, if it is soldered, the solder land should remain floating or be connected to VCC. Fig 4. Pin configuration SO14 and (T)SSOP14 74LV00 Product data sheet Fig 5. Pin configuration DHVQFN14 All information provided in this document is subject to legal disclaimers. Rev. 4 -- 9 December 2015 (c) Nexperia B.V. 2017. All rights reserved 2 of 14 74LV00 Nexperia Quad 2-input NAND gate 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10, 13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 6. Functional description Table 3. Function table[1] Input Output nA nB nY L X H X L H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don't care 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC supply voltage IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V [1] IO output current VO = 0.5 V to (VCC + 0.5 V) Min Max Unit 0.5 +7.0 V - 20 mA - 50 mA - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 C to +125 C SO14 package [2] - 500 mW (T)SSOP14 package [3] - 500 mW DHVQFN14 package [4] - 500 mW [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Ptot derates linearly with 8 mW/K above 70 C. [3] Ptot derates linearly with 5.5 mW/K above 60 C. [4] Ptot derates linearly with 4.5 mW/K above 60 C. 74LV00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 9 December 2015 (c) Nexperia B.V. 2017. All rights reserved 3 of 14 74LV00 Nexperia Quad 2-input NAND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions [1] Min Typ Max Unit 1.0 3.3 5.5 V VCC supply voltage VI input voltage 0 - VCC V VO output voltage 0 - VCC V Tamb ambient temperature 40 +25 +125 C t/V input transition rise and fall rate VCC = 1.0 V to 2.0 V - - 500 ns/V VCC = 2.0 V to 2.7 V - - 200 ns/V VCC = 2.7 V to 3.6 V - - 100 ns/V VCC = 3.6 V to 5.5 V - - 50 ns/V [1] The static characteristics are guaranteed from VCC = 1.2 V to VCC = 5.5 V, but LV devices are guaranteed to function down to VCC = 1.0 V (with input levels GND or VCC). 9. Static characteristics Table 6. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage 74LV00 Product data sheet Conditions VCC = 1.2 V 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max 0.9 - - 0.9 - V VCC = 2.0 V 1.4 - - 1.4 - V VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V VCC = 4.5 V to 5.5 V 0.7VCC - - 0.7VCC - V VCC = 1.2 V - - 0.3 - 0.3 V VCC = 2.0 V - - 0.6 - 0.6 V VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3VCC - IO = 100 A; VCC = 1.2 V - 1.2 - - - V IO = 100 A; VCC = 2.0 V 1.8 2.0 - 1.8 - V IO = 100 A; VCC = 2.7 V 2.5 2.7 - 2.5 - V IO = 100 A; VCC = 3.0 V 2.8 3.0 - 2.8 - V IO = 100 A; VCC = 4.5 V 4.3 4.5 - 4.3 - V IO = 6 mA; VCC = 3.0 V 2.4 2.82 - 2.2 - V IO = 12 mA; VCC = 4.5 V 3.6 4.2 - 3.5 - V 0.3VCC V VI = VIH or VIL All information provided in this document is subject to legal disclaimers. Rev. 4 -- 9 December 2015 (c) Nexperia B.V. 2017. All rights reserved 4 of 14 74LV00 Nexperia Quad 2-input NAND gate Table 6. Static characteristics ...continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter VOL 40 C to +85 C Conditions LOW-level output voltage Min Typ[1] 40 C to +125 C Unit Max Min Max VI = VIH or VIL IO = 100 A; VCC = 1.2 V - 0 - - - V IO = 100 A; VCC = 2.0 V - 0 0.2 - 0.2 V IO = 100 A; VCC = 2.7 V - 0 0.2 - 0.2 V IO = 100 A; VCC = 3.0 V - 0 0.2 - 0.2 V IO = 100 A; VCC = 4.5 V - 0 0.2 - 0.2 V IO = 6 mA; VCC = 3.0 V - 0.25 0.40 - 0.50 V IO = 12 mA; VCC = 4.5 V - 0.35 0.55 - 0.65 V II input leakage current VI = VCC or GND; VCC = 5.5 V - - 1.0 - 1.0 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 20.0 - 40 A ICC additional supply current per input; VI = VCC 0.6 V; VCC = 2.7 V to 3.6 V - - 500 - 850 A CI input capacitance - 3.5 - - - pF [1] Typical values are measured at Tamb = 25 C. 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; For test circuit see Figure 7. Symbol Parameter tpd propagation delay 40 C to +85 C Conditions power dissipation capacitance Unit Min Max Min Max VCC = 1.2 V - 45 - - - ns VCC = 2.0 V - 15 26 - 31 ns nA, nB to nY; see Figure 6 [2] VCC = 2.7 V CPD 40 C to +125 C Typ[1] - 11 18 - 23 ns VCC = 3.0 V to 3.6 V; CL = 15 pF [3] - 7 - - - ns VCC = 3.0 V to 3.6 V [3] - 9.0 15 - 18 ns VCC = 4.5 V to 5.5 V [3] - 6.5 11 - 14 ns CL = 50 pF; fi = 1 MHz; VI = GND to VCC [4] - 22 - - - pF [1] All typical values are measured at Tamb = 25 C. [2] tpd is the same as tPLH and tPHL. [3] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V). [4] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz, fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in V N = number of inputs switching (CL VCC2 fo) = sum of the outputs. 74LV00 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 9 December 2015 (c) Nexperia B.V. 2017. All rights reserved 5 of 14 74LV00 Nexperia Quad 2-input NAND gate 11. Waveforms 9, 90 Q$Q%LQSXW *1' W3/+ W3+/ 92+ 90 Q