A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 2.0 mA 50 V
BVCER IC = 2.0 mA 50 V
ICES VCE = 2.0 mA 2.0 mA
BVEBO IE = 1.0 mA 3.5 V
hFE VCE = 5 V IC = 200 mA 10 ---
PG
η
ηη
ηC VCC = 24 V POUT = 3.0 W f = 1800 to 2100 MHz
Pulse Width = 300 µS Duty Cycle = 10% 7.8
50
dB
%
NPN RF POWER TRANSISTOR
AM1821-3
DESCRIPTION:
The ASI AM1821-3 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
•
••
• Input/Output Matching
• Gold Metallization
•
••
• Emitter Ballasting
MAXIMUM RATINGS
IC 0.9 A
VCBO 50 V
PDISS 11.6 W @ T C = 25 °C
TJ -55 °C to+200 °C
TSTG -55 °C to+200 °C
θ
θθ
θJC 15 °C/W
PACKAGE STYLE 400 2L FLG (E)
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
