ZXMP7A17G
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS -70 V ID= -250A, VGS=0V
Zero gate voltage drain
current
IDSS -1 AV
DS= -70V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) -1.0 V ID= -250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
RDS(on) 0.16 ⍀VGS= -10V, ID= -2.1A
0.25 ⍀VGS= -4.5V, ID = -1.7A
Forward transconductance(*)(‡) gfs 4.4 S VDS= -15V, ID= -2.1A
Dynamic(‡)
Input capacitance Ciss 635 pF
VDS= -40V, VGS=0V
f=1MHz
Output capacitance Coss 52 pF
Reverse transfer capacitance Crss 42.5 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time td(on) 2.5 ns
VDD= -35V, ID= -1A
RG≅6.0⍀, VGS= -10V
Rise time tr 3.4 ns
Turn-off delay time td(off) 27.9 ns
Fall time tf8ns
Total gate charge Qg9.6 nC VDS= -35V, VGS= -5V
ID= -2.1A
Total gate charge Qg18 nC
VDS= -35V, VGS= -10V
ID= -2.1A
Gate-source charge Qgs 1.77 nC
Gate drain charge Qgd 3.66 nC
Source-drain diode
Diode forward voltage(*) VSD -0.85 -0.95 V Tj=25°C, IS= -2.0A,
VGS=0V
Reverse recovery time(‡) trr 29.8 ns Tj=25°C, IS= -2.1A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 38.5 nC