Standard Power MOSFETs IRF820, IRF821, IRF822, IRF823 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V fos(ON) = 3.0 Q and 4.09 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The {IRF820, IRF821, IRF822 and IRF823 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings File Number 1581 N-CHANNEL ENHANCEMENT MODE 6O s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN ~ (FLANGE) O [ SOURCE i DRAIN C care TOP VIEW $2CS-38526 JEDEC TO-220AB Parameter IRF820 IRF821 IRF822 IRF823 Units Vos Drain - Source Voltage QD 500 450 500 450 v Vogr Drain - Gate Voltage (Rgg_20KQ) 500 450 500 450 v |p @ Tc = 25C Continuous Drain Current 2.5 2.5 2.0 2.0 A Ip @ Te = 100C Continuous Drain Current 1.5 1.5 1.0 1.0 A Lom Putsed Drain Current @ 10 10 8.0 8.0 A vi Gate - Source Voltage 20 Vv Pp @ Tc = 25C Max. Power Dissipation 40 (See Fig. 14) w Linear Derating Factor 0.32 (See Fig. 14) wee tim Inductive Current, Clamped (See Fig. 15 and 16) L = 100xH A 10 L 10. L 8.0 L 3.0 1, Sere unction an ge ~55 to 150 c i Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} C 3-194Standard Power MOSFETs IRF820, IRF821, IRF822, IRF823 Electrical Characteristics @Tc = 25C (Uniess Otherwise Specified) Parameter Type Min. Typ. | Max Units Test Conditions BVpssg._ Drain - Source Breakdown Voltage IRF820 . inFez2 | 500 v Vas = OV iRF821 inFa23 | 45 v Ip: 250A Vesith) Gate Threshold Voltage ALL 2.0 4.0 Vv Vos = Vas. tp = 25004 Igsg _ Gate-Source Leakage Forward ALL - 500 nA Vgs = 20V \Gss _ Gate-Source Leakage Reverse ALL - 500 nA Vgs + -20V 'pss Zero Gate Voltage Drain Current ALL - 250 aA Vos < Max. Rating, Vgs = OV - 1000 uA Vps = Max. Rating x 0.8, Vag = OV. Tc = 125C Ipton} On-State Orain Current @) IRF820 2.5 - A JRF621 Vos?! R Veg = 10V DS? 'pioni * Rosion) max. YGs 'RF822 2.0 A (RFa23 . Rpsion) Static Orain-Source On-State SRF820 _ 25 3.0 2 Resistance IRF821 v tov. | 10a IRFB22 _ 3.0 1 40 2 ose oo IRF823 . . 9s Forward Transconductance @ ALL 10 [1.75] $B) Vos > 'pion} * pstont max. 'p = 1-0A Ciss Input Capacitance ALL - 300 pF Vos = OV. Vpg = 25V,f = 1.0MHz Coss _ Output Capacitance ALL = 75 | pF See Fig. 10 Crss Reverse Transfer Capacitance ALL = 20 pF tajon) _Turn-On Delay Time ALL = 30 | 60 ns Vop = 0-5 8Vpg5 Ip = 1-0A,Z, = 509 ty Rise Time ALL ~ 25 50 ns See Fig. 17 tajoffy - Turn-Off Delay Time ALL = 30 60 ns (MOSFET switching times are essentially 7 Fall Time ALL 7 15 30 ns independent of operating temperature.) Q, Total Gate Charge v, = 10V, Ip = 3.04, V, = 0.8 Max. Rating. 3 Al - is 18 Cc GS 0 os (Gate-Source Plus Gate-Drain} tL " See Fig. 18 for test circuit. (Gate charge is essentially Qgg Gate-Source Charge ALL _ 5.0 75 nc independent of operating temperature.) Qgg _ Gate-Drain (Miller) Charge ALL - [60]{ 90 } ac Lp Internal Drain Inductance - 3.5 _ nH Measured {rom the Moditied MOSFET contact screw on tab symbol showing the to center of die, internal device ALL J - 4.5 ~ nH Measured {rom the drain lead, 6mm (0.25 o in.) from package to center of die. ip ls Internal Source Inductance ALL - 7S - aH Measured from the source lead, 6mm GS is 10.25 in. from package to source Ss banding pad. Thermal Resistance Rrhyc Junction-to-Case ALL - 3.12 | C/W Rincs Case-to-Sink ALL 1.0 - C/W Mounting surface flat, smooth, and greased. Rinya Junction-to-Ambient ALL so | C/W Free Air Operation Source-Drain Diode Ratings and Characteristics Is. Continuous Source Current IRF820 _ _ 25 A Modified MOSFET symbol {Body Diode} . IRF821 showing the integral IRFB22 reverse P-N junction rectifier. o trez3 | ~ {| ~ | 20] A 1sm____ Pulse Source Current 1RFB20 _ _ (Body Diode) @ (RF821 10 A G IRFB22 _ $ iar823 | Bo] A Vsgp _ Diode Forward Voltage @ (RF820 _ _ 16 v Te = 28C. Ig = 2.5. Vgg = OV IRF821 IRF822 _ _ one, _ a IRFB23 5 v Te = 25C. Ig = 2.08. Vgg = OV tre Reverse Recovery Time ALL = 600 ~ ns Ty = 150C. Ip = 2.5A, dip/dt = 100 Aixs Ora Reverse Recovered Charge ALL = 3.5 ~ ae Ty = 150C, ip = 2.5A, dip/dt = 100 Alus ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled byls + Lp. @Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. Repetitive Rating: Pulse width limited by max. junction temperature See Transient Thermal Impedance Curve (Fig. 5}. 3-195Standard Power MOSFETs IRF820, IRF821, IRF822, IRF823 3-196 us PULSE TEST ieenhe Vos > !pton) * Roston) max. Ip. ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 0 $6 100 180 200 250 0 2 4 6 8 10 Vpg, DRAIN.TO-SOURCE VOLTAGE (VOLTS} Vgs, GATE-Ta-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig, 2 Typical Transfer Characteristics OPERATION (N THIS AREA JS LIMITED ey fp, ORAIN CURRENT (AMPERES) ip, ORAIN CURRENT (AMPERES) c= 25C Ty = 150C MAX Ring 2:12 C (W SINGLE PULSE 1RF820, 2: 05 0 4 8 12 16 20 1002 5 10 20 $0 100 200 800 Vos, ORAIN-T0-SOURCE VOLTAGE (VOLTS) Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area . > = a Z ft _ FE 10 ws 22 GS 05 we 23 oz ga zs beim z2 0 23 on" 1. DUTY FACTOR, D= z . ge SINGLE PULSE = oe THERMAL IMPEDANCE) 2, PER UNIT BASE * Rinse = 3.12 DEG. CW. 3 3. Taw Te = Prost Zenacl. F oo ws 2 5 wt 2 5 (62 5 we 2 5 wl 2 5 i 2 5 (0 ty. SQUARE WAVE PULSE OURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationStandard Power MOSFETs IRF820, IRF821, IRF822, IRF823 us et Vos > 'D(on) * 102 fg, TRANSCONDUCT ANCE (SIEMANS) ipa. REVERSE DRAIN CURRENT {AMPERES} 10 0 1 2 3 4 5 0 1 2 3 4 'p, GRAIN CURRENT (AMPERES) Vgp,. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 128, Vgg = 10V w =25A 3 w < & 2 1S = > 2 =z a z = 2 Be 5 s 55 105 we en gn oS S2 oF B= zz Be 26 ro Bz 09s 22 2 = = Se 0.68 g z 015 . 40 0 40 80 120 160 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE {C} Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 1000 20 Veg 20 t= MHz Vos > 100V 200 Cag = Cop + Cop, Cus SHORTED Cis = 1 Vos = 250V rss = Cog tet 5 Nos +3 Coan = Cds + toot Vpg - 400V, 1RF820, 822 60 ~ Cas + Cog C, CAPACITANCE (pF) wn Vas. GATE-TO-SGUACE VOLTAGE (VOLTS) 3 200 tneaa FOR TEST CIRCUIT SEE FIGURE o 10 20 30 0 50 0 4 6 2 16 20 Vos. DRAIN-TO-SGURCE VOLTAGE (VOLTS) Q,, TOTAL GATE CHARGE in) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3-197Standard Power MOSFETs IRF820, IRF821, IRF8&22, IRF823 IN RESISTANCE (OHMS) DRAIM-TO-SOURCE 0 Sionj- ston) MEASUAEO WITH CURRENT if BURATION. INITIAL T) = OF 20 0 2 4 6 8 10 ip, ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 0 36 a 20 Pg, POWER DISSIPATION (WATTS} 0 20 28C. HEATING IS MINIMAL) 12 iRF820, 821 IRF822, B23 Ip. DRAIN CURRENT (AMPERES) o 4 5 50 8 100 Te. CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature 125 180 0 60 80 106 To, CASE TEMPERATURE (C) 120 40 Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO OBTAIN REQUIRED PEAK I, 1 , = O.5BVps5 our Vg = 0.758Vpss Fig. 15 Clamped Inductive Test Circuit ADJUST Ry TO OBTAIN SPECIFIED Ip LSt GENERATOR TO SCOPE 0.018 HIGH FREQUENCY SHUNT Fig. 17 Switching Time Test Circuit 3-198 Fig. 16 -- Clamped inductive Waveforms Vos CURRENT WSOLATED REGULATOR SUPPLY) SAME TYPE AS DUT 0. ut BATTERY 10 CURRENT SHUNT CURRENT = SHUNT Fig. 18 Gate Charge Test Circuit