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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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August 2014
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
1
FCD5N60 / FCU5N60
N-Channel SuperFET® MOSFET
600 V, 4.6 A, 950 mΩ
Features
•650 V @ T
J = 150°C
•Typ. R
DS(on) = 810 mΩ
• Ultra Low Gate Charge (Typ. Qg = 16 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 32 pF)
• 100% Avalanche Tested
•RoHS Compliant
Application
• LCD/LED TV and Monitor
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FCD5N60TM
FCD5N60TM_WS
FCU5N60TU
Unit
VDSS Drain to Source Voltage 600 V
IDDrain Current - Continuous (TC = 25oC) 4.6 A
- Continuous (TC = 100oC) 2.9
IDM Drain Current - Pulsed (Note 1) 13.8 A
VGSS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 159 mJ
IAR Avalanche Current (Note 1) 4.6 A
EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25oC) 54 W
- Derate Above 25oC0.43W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter
FCD5N60TM
FCD5N60TM_WS
FCU5N60TU
Unit
RθJC Thermal Resistance, Junction to Case, Max. 2.3 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 83
GDS
I-PAK
D-PAK
G
S
D
G
S
D
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
2
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCD5N60TM FCD5N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units
FCD5N60TM_WS FCD5N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units
FCU5N60TU FCU5N60 IPAK Tube N/A N/A 75 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V
VGS = 0 V, ID = 250 μA, TC = 150oC- 650 - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25oC-0.6-V/
oC
BVDS
Drain to Source Avalanche Breakdown
Voltage VGS = 0 V, ID = 4.6 A - 700 - V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.3 A - 0.81 0.95 Ω
gFS Forward Transconductance VDS = 40 V, ID = 2.3 A -3.8-S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
- 470 600 pF
Coss Output Capacitance - 250 320 pF
Crss Reverse Transfer Capacitance - 22 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 12 - pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 32 - pF
td(on) Turn-On Delay Time
VDD = 300 V, ID = 4.6 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-1230ns
trTurn-On Rise Time - 40 90 ns
td(off) Turn-Off Delay Time - 47 95 ns
tfTurn-Off Fall Time - 22 55 ns
Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 4.6 A,
VGS = 10 V
(Note 4)
-16-nC
Qgs Gate to Source Gate Charge - 2.8 - nC
Qgd Gate to Drain “Miller” Charge - 7 - nC
ISMaximum Continuous Drain to Source Diode Forward Current - - 4.6 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.8 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4.6 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 4.6 A
dIF/dt = 100 A/μs
- 295 - ns
Qrr Reverse Recovery Charge - 2.7 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 4.6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
3
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
246810
10-1
100
101
* Note
1. VDS = 40V
2. 250μs Pulse Test
-55oC
150oC
25oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
10-1 100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
* Note
1. VDS = 40V
2. 250μs Pulse Test
-55oC
150oC
25oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0.0 2.5 5.0 7.5 10.0 12.5 15.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
051015
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 4.6A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
100101
0
500
1000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
4
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID = 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 2.3 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
10 us
100 ms
Operation in This Area
is Limited by R DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
1
2
3
4
5
ID, Drain Current [A]
TC, Case Temperature [oC]
t1
PDM
t2
Z
θ
JC(t), Thermal Response [oC/W]
Z
θ
JC
(t), Thermal Response [
o
C/W]
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
5
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2008 Fairchild Semiconductor Corporation
FCD5N60 / FCU5N60 Rev. C2
www.fairchildsemi.com
6
FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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