MMBT2369ALT - ON SEMICONDUCTOR

January, 2007 − Rev. 5 1Publication Order Number:

MMBT2369LT1/D

MMBT2369LT1,

MMBT2369ALT1

MMBT2369ALT1 is a Preferred Device

Switching Transistors

NPN Silicon

Features

•Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 15 Vdc

Collector−Emitter Voltage VCES 40 Vdc

Collector−Base Voltage VCBO 40 Vdc

Emitter−Base Voltage VEBO 4.5 Vdc

Collector Current − Continuous IC200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Res istance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Res istance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg − 55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Device Package Shipping

ORDERING INFORMATION

MMBT2369LT1 SOT−23 3000/Tape & Ree

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAMS

COLLECTOR

BASE

EMITTER

MMBT2369ALT1 SOT−23 3000/Tape & Ree

http://onsemi.com

xxx = M1J or 1JA

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

MMBT2369ALT1G SOT−23

(Pb−Free) 3000/Tape & Ree

MMBT2369LT1G SOT−23

(Pb−Free) 3000/Tape & Ree

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−23

CASE 318

STYLE 6

xxx M G

MMBT2369LT1, MMBT2369ALT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 10 mAdc, IB = 0) V(BR)CEO 15 − − Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0) V(BR)CES 40 − − Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0) V(BR)CBO 40 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) V(BR)EBO 4.5 − − Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

ICBO −

−−

−0.4

mAdc

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0) MMBT2369A ICES − − 0.4 mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369

(IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A

(IC = 10 mAdc, VCE = 0.35 Vdc) MMBT2369A

(IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) MMBT2369A

(IC = 30 mAdc, VCE = 0.4 Vdc) MMBT2369A

(IC = 100 mAdc, VCE = 2.0 Vdc) MMBT2369

(IC = 100 mAdc, VCE = 1.0 Vdc) MMBT2369A

hFE 40

−

120

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369

(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A

(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) MMBT2369A

(IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A

(IC = 100 mAdc, IB = 10 mAdc) MMBT2369A

VCE(sat) −

−

0.25

0.20

0.30

0.25

0.50

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A

(IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) MMBT2369A

(IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A

(IC = 100 mAdc, IB = 10 mAdc) MMBT2369A

VBE(sat) 0.7

−

0.85

1.02

1.15

1.60

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 4.0 pF

Small Signal CurrentGain

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) hfe 5.0 − − −

SWITCHING CHARACTERISTICS

Storage Time

(IB1 = IB2 = IC = 10 mAdc) ts− 5.0 13 ns

Turn−On Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton − 8.0 12 ns

Turn−Off Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff − 10 18 ns

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBT2369LT1, MMBT2369ALT1

http://onsemi.com

Figure 1. ton Circuit − 10 mA Figure 2. toff Circuit − 10 mA

+10.6 V

−1.5 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

3 V 270 W

3.3 k Cs* < 4 pF

+10.75 V

−9.15 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

270 W

3.3 k Cs* < 4 pF

*Total shunt capacitance of test jig and connectors.

Figure 3. ton Circuit − 100 mA Figure 4. toff Circuit − 100 mA

10 V 95 W

1 k Cs* < 12 pF

+10.8 V

−2 V 0

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

< 1 ns

−8.6 V

+11.4 V t1

PULSE WIDTH (t1) BETWEEN

10 AND 500 ms

DUTY CYCLE = 2%

95 W

1 k Cs* < 12 pF

10 V

1N916

*Total shunt capacitance of test jig and connectors.

Figure 5. Turn−On and Turn−Off Time Test Circuit

Vout 90%

10%

Vin

ton

Vin

3.3 kW

50 W

220 W

50 W

0.1 mF

Vout

3.3 k

0.0023 mF 0.0023 mF

0.005 mF 0.005 mF

0.1 mF 0.1 mF

VBB +

−+

−VCC = 3 V

Vin

90%

10%

toff

Vout

VBB = +12 V

Vin = −15 V

TO OSCILLOSCOPE

INPUT IMPEDANCE = 50 W

RISE TIME = 1 ns

TURN−OFF WAVEFORMS

PULSE GENERATOR

Vin RISE TIME < 1 ns

SOURCE IMPEDANCE = 50 W

PW ≥ 300 ns

DUTY CYCLE < 2%

TURN−ON WAVEFORMS

MMBT2369LT1, MMBT2369ALT1

http://onsemi.com

100.1 0.2 0.5 1.0 2.0 5.0

REVERSE BIAS (VOLTS)

CAPACITANCE (pF)

SWITCHING TIMES (nsec)

LIMIT

TYPICAL

Cob

Cib

TJ = 25°C

Figure 6. Junction Capacitance Variations

100

1 2 5 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Figure 7. Typical Switching Times

βF = 10

VCC = 10 V

VOB = 2 V

tr (VCC = 3 V)

VCC = 10 V

+6 V

−4 V

< 1 ns

PULSE WIDTH (t1) = 300 ns

DUTY CYCLE = 2%

10 V 980

500 Cs* < 3 pF

C COPT

TIME

C < COPT C = 0

Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit

MMBT2369LT1, MMBT2369ALT1

http://onsemi.com

VCE, MAXIMUM COLLECTOR−EMITTER VOLTAGE (VOLTS

)

1.0

0.8

0.6

0.4

0.2

0.02 0.05 0.1 0.2 0.5 1 2 5 10 20

IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA

TJ = 25°C

IB, BASE CURRENT (mA)

Figure 10. Maximum Collector Saturation Voltage Characteristics

hFE, MINIMUM DC CURRENT GAIN

V(sat), SATURATION VOLTAGE (VOLTS)

200

100

12 51020 50100

IC, COLLECTOR CURRENT (mA)

Figure 11. Minimum Current Gain Characteristics

VCE = 1 V

TJ = 125°C

75°C

25°C

−15°C

−55°C

TJ = 25°C and 75°C

1.4

1.2

1.0

0.8

0.6

0.4

0.2 12 51020 50100

IC, COLLECTOR CURRENT (mA)

Figure 12. Saturation Voltage Limits

βF = 10

TJ = 25°C

MAX VBE(sat)

MIN VBE(sat)

MAX VCE(sat)

MMBT2369LT1, MMBT2369ALT1

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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MMBT2369LT1/D

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