TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Gallium-Arsenide-Diode Infrared Source
D
Source Is Optically Coupled to Silicon npn
Phototransistor
D
Choice of One, Two, or Four Channels
D
Choice of Three Current-Transfer Ratios
D
High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
D
Plastic Dual-In-Line Packages
D
UL Listed — File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL192
1
2
3
4
8
7
6
5
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
TIL191
1
2
4
3
ANODE
CATHODE
COLLECTOR
EMITTER
TIL193
1
2
3
4
16
15
14
13
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
5
6
7
8
12
11
10
9
3ANODE
3CATHODE
4ANODE
4CATHODE
3COLLECTOR
3EMITTER
3COLLECTOR
3EMITTER
absolute maximum ratings at 25°C free-air (unless otherwise noted)†
Input-to-output voltage (see Note 1) ±3.535 kV peak or dc (±2.5 kV rms). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 2) 35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-collector voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode reverse voltage 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) 50 mA. . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) 150 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode plus phototransistor per channel (see Note 5) 200 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics 25°C free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC = 0.5 mA, IF = 0 35 V
V(BR)ECO Emitter-collector breakdown voltage IC = 100 µA, IF = 0 7 V
IRInput diode static reverse current VR = 5 V 10 µA
IC(off)) Of f-state collector current VCE = 24 V, IF = 0 100 nA
TIL191, TIL192, TIL193 20%
CTR Current transfer ratio TIL191A, TIL192A, TIL193A IF = 5 mA, VCE = 5 V 50%
TIL191B, TIL192B, TIL193B 100%
VFInput diode static forward voltage IF = 20 mA 1.4 V
VCE(sat) Collector-emitter saturation voltage IF = 5 mA, IC = 1 mA 0.4 V
Cio Input-to-output capacitance Vin–out = 0 mA,
See Note 6 f = 1 MHz, 1 pF
rio Input-to-output internal resistance Vin–out = ±1 mA, See Note 6 1011 Ω
NOTE 6: These parameters are measured between all input diode leads shorted together and all phototransistor leads shorted together.
switching characteristics at 25°C free-air temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
trRise time VCC = 5 V, IC
(
on
)
= 2 mA, 6
µs
tfFall time
CC
RL = 100 Ω,
C(on)
See Figure 1 6µ
s
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
+
–VCC = 5 V
Input (see Note A)
Output (see Note B)
RL = 100 Ω
47 Ω
trtf
90%
10%
90%
10%
Output
Input 0 V
VOLTAGE WAVEFORMS
NOTE C. Adjust amplitude of input
pulse for IC(on) = 2 mA
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZOUT = 50 Ω, tr ≤ 15 ns, duty cycle ≈ 1%,
tw = 100 µs.
B. The output waveform is monitored on a oscilloscope with the following characteristic: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.
Figure 1. Switching Times
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
80
60
20
00 0.2 0.4 0.6 0.8 1 1.2
– Forward Current – mA
100
140
FORWARD CURRENT
vs
FORWARD VOLTAGE
160
1.4 1.6 1.8 2
40
120
IF
VF – Forward Voltage – V
TA = 25°C
TA = 70°C
TA = –55°C
8
6
2
00123456
– Collector Current – mA
10
14
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
16
78910
4
12
TIL191, TIL192, TIL193
IC
VCE – Collector-Emitter Voltage – V
IB = 0
TA = 25°CIF = 12 mA
IF = 10 mA
IF = 8 mA
IF = 5 mA
IF = 2 mA
Figure 3
0.01
0.001
0.1 0.4 1 4 10 40 100
ON-STATE COLLECTOR CURRENT (NORMALIZED)
vs
INPUT DIODE FORWARD CURRENT
0.1
1
10
100 VCE = 5 V
Normalized to IF = 5 mA
TA = 25°C
IF – Input Diode Forward Current – mA
– On-State Collector Current (Normalized)
IC(on)
Figure 4 Figure 5
0.8
0.7
0.5
0.4
0.9
1.1
1.2
1
0.6
–50 –25 0 25 50 75 100
TA – Free-Air Temperature – °C
VCE = 5 V
IF = 5 mA
IB = 0
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
(Relative to Value at
On-State Collector Current
A°= 25 C)T
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.12
0.08
0.04
0
– Collector-Emitter Saturation Voltage – V
0.16
0.20
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
FREE-AIR TEMPERATURE
0.24
–50 –25 0 25 50 75 100
IF = 5 mA
IC = 1 mA
VC(sat)
TA – Free-Air Temperature – °C
Figure 6
APPLICATION INFORMATION
Vcc = 5 V
OUTPUT
7.5 kΩ430 Ω
SN7404
TIL191
SN7404
5 V
INPUT
Figure 7
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL INFORMATION
C
LL
C
Seating Plane
21,1 (0.831)
18,5 (0.728)
5,84 (0.230) MAX
3,81 (0.150)
2,54 (0.100) 0,58 (0.023)
0,43 (0.017)
105°
90°
2,79 (0.110)
2,29 (0.090)
0,51 (0.125) MIN
3,81 (0.150)
3,30 (0.130)
6,76 (0.266)
6,25 (0.246)
7,62 (0.300) T.P.
(see Note A)
1,27 (0.050)
1,12 (0.044)
10,2 (0.401)
9,2 (0.362)
4,80 (0.189)
4,19 (0.165)
Pin 1
TIL193
Pin 1
TIL192
Pin 1
TIL191
NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.
B. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 8. Mechanical Information
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Copyright 1998, Texas Instruments Incorporated
