Vishay Semiconductors
TLMG/H/O/P/Y310.
Document Number 83032
Rev. 1.8, 12-Sep-07
www.vishay.com
1
Standard SMD LED PLCC-2
FEATURES
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 1.6
• Lead (Pb)-free device
94 8553
e3
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLM.310. is the PLCC-2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: ± 60°
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLMH3100 Red, IV > 2.5 mcd GaAsP on GaP
TLMH3101 Red, IV = (4 to 12.5) mcd GaAsP on GaP
TLMH3102 Red, IV = (6.3 to 20) mcd GaAsP on GaP
TLMO3100 Soft orange, IV > 2.5 mcd GaAsP on GaP
TLMO3101 Soft orange, IV = (4 to 12.5) mcd GaAsP on GaP
TLMY3100 Yellow, IV > 2.5 mcd GaAsP on GaP
TLMY3102 Ye l l ow, I V = (6.3 to 20) mcd GaAsP on GaP
TLMG3100 Green, IV > 4 mcd GaP on GaP
TLMG3102 Green, IV = (10 to 20) mcd GaP on GaP
TLMG3105 Green, IV = (6.3 to 20) mcd GaP on GaP
TLMP3100 Pure green, IV > 1 mcd GaP on GaP
TLMP3101 Pure green, IV = (1.6 to 5) mcd GaP on GaP
TLMP3107 Pure green, IV = (2.5 to 5) mcd GaP on GaP
TLMP3102 Pure green, IV = (2.5 to 8) mcd GaP on GaP
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Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
Note:
1) Tamb = 25 °C, unless otherwise specified
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmax/IVmin ≤ 1.6
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmax/IVmin ≤ 1.6
ABSOLUTE MAXIMUM RATINGS1) TLMG310. ,TLMH310. TLMO310. ,TLMP310. ,TLMY310
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
DC forward current Tamb ≤ 60 °C IF30 mA
Surge forward current tp ≤ 10 µs IFSM 0.5 A
Power dissipation Tamb ≤ 60 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s Tsd 260 °C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)RthJA 400 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMH310., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLMH3100 IV2.5 6 mcd
TLMH3101 IV412.5mcd
TLMH3102 IV6.3 20 mcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp635 nm
Angle of half intensity IF = 10 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF22.8V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLM0310., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA TLMO3100 IV2.5 8 mcd
TLMO3101 IV412.5mcd
Dominant wavelength IF = 10 mA λd598 611 nm
Peak wavelength IF = 10 mA λp605 nm
Angle of half intensity IF = 10 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF22.8V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
Document Number 83032
Rev. 1.8, 12-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLMG/H/O/P/Y310.
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmax/IVmin ≤ 1.6
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmax/IVmin ≤ 1.6
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmax/IVmin ≤ 1.6
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMY310., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA TLMY3100 IV2.5 6 mcd
TLMY3102 IV6.3 20 mcd
Dominant wavelength IF = 10 mA λd581 594 nm
Peak wavelength IF = 10 mA λp585 nm
Angle of half intensity IF = 10 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF2.1 2.8 V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMG310., GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLMG3100 IV49 mcd
TLMG3102 IV10 20 mcd
TLMG3105 IV6.3 20 mcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF2.2 2.8 V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMP310., PURE GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLMP3100 IV14 mcd
TLMP3101 IV1.6 5 mcd
TLMP3102 IV2.5 8 mcd
TLMP3107 IV2.5 5 mcd
Dominant wavelength IF = 10 mA λd555 565 nm
Peak wavelength IF = 10 mA λp555 nm
Angle of half intensity IF = 10 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF2.1 2.8 V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj15 pF
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Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 3. Pulse Forward Current vs. Pulse Duration
100806040
0
25
50
75
100
125
P- Power Dissipation (mW)
V
T
amb - Ambient Temperature (°C)
95 10904
200
0
10
20
30
40
60
I
F
- Forward Current (mA)
95 10905
50
T
amb
- Ambient Temperature (°C)
100806040200
0.01 0.1 1 10
1
10
100
1000
10000
t
p- Pulse Length (ms)
100
95 9985
I - Forward Current (mA)
F
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
< 60 °C
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
0.4 0.2 0 0.2 0.4 0.6
95 10319 0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
IV rel - Relative Luminous Intensity
0.1
1
10
100
VF- Forward Voltage (V)
5 4 3 2
95 9989
I - Forward Current (mA)
F
red
1 0
0
0.4
0.8
1.2
1.6
2.0
100
95 9993
I - RelativeLuminous Intensity
vrel
Tamb- Ambient Temperature (°C)
0 20406080
red
Document Number 83032
Rev. 1.8, 12-Sep-07
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5
Vishay Semiconductors
TLMG/H/O/P/Y310.
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 9. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2
.
4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tP/T
2.0
IV rel - Relative Luminous Intensity
red
0.01
0.1
1
10
I
F- Forward Current (mA)
100 10 1
95 9995
I- Relative Luminous Intensity
v rel
red
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040 λ - Wavelength (nm)
1.0
red
I - Relative Luminous Intensity
Vr el
Figure 10. Forward Current vs. Forward Voltage
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
95 9990
I- Forward Current (mA)
F
soft orange
VF- Forward Voltage (V)
5 4 3 2 1 0
95 9994
soft orange
0
0.4
0.8
1.2
1.6
2.0
100
IV rel - Relative Luminous Intensity
Tamb - Ambient Temperature (°C)
020406080
95 10259
soft orange
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
500
0.5 0.2 0.1 0.05 0.02 1
I
F (mA)
t
p
/T
2.0
I - Relative Luminous Intensity
Vr el
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Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 14. Relative Intensity vs. Wavelength
Figure 15. Forward Current vs. Forward Voltage
0.01
0.1
1
10 1001
10
I
F
- Forward Current (mA)
95 9997
I - Relative Luminous Intensity
v rel
soft orange
95 10324
soft orange
570 590 610 630 650
0
0.2
0.4
0.6
0.8
1.2
670
λ - Wavelength (nm)
1.0
I - Relative Luminous Intensity
Vrel
yellow
0.1
1
10
100
95 9987V
F
- Forward Voltage (V)
I- Forward Current (mA)
F
521034
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 18. Relative Luminous Intensity vs. Forward Current
yellow
0
0.4
0.8
1.6
1.2
2.0
95 9992
I- RelativeLuminous Intensity
v rel
T
amb
- Ambient Temperature (°C)
20 40 60 800 100
yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
vrel
2.0
yellow
I
F
- Forward Curren t (mA)
100
0.01
0.1
1
10
95 9999
I- Relative Luminous Intensity
v rel
10 1
Document Number 83032
Rev. 1.8, 12-Sep-07
www.vishay.com
7
Vishay Semiconductors
TLMG/H/O/P/Y310.
Figure 19. Relative Intensity vs. Wavelength
Figure 20. Forward Current vs. Forward Voltage
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
λ - Wavelength (nm)
1.0
yellow
I
V rel
- Relative Luminous Intensity
green
0.1
1
10
100
V
F - Forward Voltage (V)
I- Forward Current (mA)
F
52103
95 9986
4
green
0
0.4
0.8
1.6
1.2
2.0
95 10320
I- RelativeLuminous Intensity
v rel
Tamb-Ambient Temperature (°C)
20 40 60 800 100
Figure 22. Specific Luminous Intensity vs. Forward Current
Figure 23. Relative Luminous Intensity vs. Forward Current
Figure 24. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
green
I - Specific Luminous Intensity
IF (mA)
0.5 0.2 0.1 0.05 0.021 tp/T
green
I
F - Forward Current (mA)
100
0.01
0.1
1
10
95 9996
I- RelativeLuminous Intensity
v rel
101
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038λ - Wavelength (nm)
1.0
green
I - Relative Luminous Intensity
Vrel
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Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
Figure 27. Specific Luminous Intensity vs. Forward Current
02
0.1
1
10
100
5
95 9988
pure green
F
I - Forward Current (mA)
V
F - Forward Voltage (V)
13
4
0
0.4
0.8
1.2
1.6
2.0
95 9991
pure green
I - Relative Luminous Intensity
Vrel
T
am b
- Ambient Temperature (°C)
0 10080604020
95 10261
10 1000100
0
0.4
0.8
1.2
1.6
2.4
2.0
pure green
I - Specific Luminous Flux
Spec
IF- Forward Current (mA)
Figure 28. Relative Luminous Intensity vs. Forward Current
Figure 29. Relative Intensity vs. Wavelength
0.01
0.1
1
10
100 10 1
95 9998
pure green
I - Relative Luminous Intensity
Vrel
I
F
- Forward Current (mA)
500 520 540 560 580
0
0.2
0.4
0.6
0.8
1.2
600
95 10325
1.0
pure green
λ- Wavelength (nm)
I - Relative Luminous Intensity
Vrel
Document Number 83032
Rev. 1.8, 12-Sep-07
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9
Vishay Semiconductors
TLMG/H/O/P/Y310.
PACKAGE DIMENSIONS in millimeters
95 11314-1
Mounting Pad Layout
3.5 ± 0.2
0.9
1.75 ± 0.10
Pin identification
2.8+ 0.15
2.2
?
2.4
3+ 0.15
1.2
2.6 (2.8)
1.6 (1.9)
4
4
area covered with
solder resist
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
CA
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Document Number 83032
Rev. 1.8, 12-Sep-07
Vishay Semiconductors
TLMG/H/O/P/Y310.
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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