2SK3070(L) - Renesas Electronics

2SK3070(L),2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-684G (Z)

8th. Edition

Feb. 1999

Features

• Low on-resistance

RDS(on) =4.5mΩ typ.

• Low drive current

• 4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

4

123

4

LDPAK

G

D

S

2SK3070(L),2SK3070(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 40 V

Gate to source voltage VGSS ±20 V

Drain current ID75 A

Drain peak current ID(pulse) Note1300 A

Body-drain diode reverse drain current IDR 75 A

Avalanche current IAP Note350 A

Avalanche energy EAR Note3333 mJ

Channel dissipation Pch Note2100 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

2SK3070(L),2SK3070(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS 40——V I

D

= 10mA, VGS = 0

Gate to source leak current IGSS ——±0.1 µAV

GS = ±20V, VDS = 0

Zero gate voltege drain

current IDSS ——10µAV

DS = 40 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1mA, VDS = 10V Note1

Static drain to source on state RDS(on) — 4.5 5.8 mΩID = 40A, VGS = 10V Note1

resistance — 6.5 10 mΩID = 40A, VGS = 4V Note1

Forward transfer admittance |yfs|5080—SI

D

= 40A, VDS = 10V Note1

Input capacitance Ciss — 6800 — pF VDS = 10V

Output capacitance Coss — 1300 — pF VGS = 0

Reverse transfer capacitance Crss — 380 — pF f = 1MHz

Total gate charge Qg — 130 — nc VDD = 25V

Gate to source charge Qgs — 25 — nc VGS = 10V

Gate to drain charge Qgd — 30 — nc ID = 75A

Turn-on delay time td(on) — 60 — ns VGS = 10V, ID = 40A

Rise time tr— 300 — ns RL = 0.75Ω

Turn-off delay time td(off) — 550 — ns

Fall time tf— 400 — ns

Body–drain diode forward

voltage VDF — 1.05 — V IF = 75A, VGS = 0

Body–drain diode reverse

recovery time trr — 90 — ns IF = 75A, VGS = 0

diF/ dt =50A/µs

Note: 1. Pulse test

2SK3070(L),2SK3070(S)

4

Main Characteristics

200

150

100

050 100 150 200 0.1 0.3 1 310 30 100

100

80

60

40

20

0246810

1000

300

100

30

10

1

0.3

0.1

3

Ta = 25°C

10 µs

100 µs

1 ms

DC Operation

(Tc = 25°C)

PW = 10 ms (1 shot)

3.5 V

3 V

50

V = 10 V

GS

5 V

4 V

2.5 V

100

80

60

40

20

012345

Tc = –25°C

25°C

75°C

V = 10 V

Pulse Test

DS

Pulse Test

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in

this area is

limited by R

DS(on)

2SK3070(L),2SK3070(S)

5

048

12 16 20

20

16

12

8

4

–50 0 50 100 150 200

0

V = 10 V

GS

4 V

Pulse Test

0.5

0.4

0.3

0.2

0.1

Pulse Test

I = 50 A

D

20 A

10 A

130 100

3

100

2

5

1

10 300

20

10

V = 4 V

GS

10 V

Pulse Test

10, 20, 50 A

I = 50 A

D

10, 20 A

0.1 0.3 1 3 10 30 100

500

100

200

20

50

10

2

5

1

0.5

Tc = –25 °C

75 °C

25 °C

V = 10 V

Pulse Test

DS

50

1000

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R (m )

Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R (m )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

2SK3070(L),2SK3070(S)

6

0.1 0.3 1 3 10 30 100 01020304050

1000

10000

3000

100

80

60

40

20

0

20

16

12

8

4

80 160 240 320 400

0

1000

100

200

20

10

0.1 0.2 210 100

1000

500

100

200

20

50

10

di / dt = 50 A / µs

V = 0, Ta = 25 °C

GS

300

20

1

100

V = 0

f = 1 MHz

GS

Ciss

Coss

Crss

I = 75 A

D

VGS

VDS

DD

V = 40 V

25 V

10 V

0.5 5

500

50

V = 10 V, V = 30 V

PW = 5 µs, duty < 1 %

GS DD

r

t

d(on)

t

d(off)

t

tf

30000

V = 40 V

25 V

10 V

DD

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

2SK3070(L),2SK3070(S)

7

00.4 0.8 1.2 1.6 2.0

p X“Ł

V = 0, –5 V

GS

5 V

10 V

100

80

60

40

20

D. U. T

Rg

I

Monitor

AP

V

Monitor

DS

V

DD

50Ω

Vin

15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1V

V – V

AR AP DSS

DSS DD

2

500

400

300

200

100

25 50 75 100 125 150

0

I = 50 A

V = 25 V

duty < 0.1 %

Rg > 50

AP

DD

Ω

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E (mJ)

AR

Maximun Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Avalanche Test Circuit Avalanche Waveform

2SK3070(L),2SK3070(S)

8

Vin Monitor

D.U.T.

Vin

10 V

R

L

V

= 30 V

DD

tr

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

t

f

3

1

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

DM

P

PW

T

D = PW

T

ch – c(t) = s (t) • ch – c

ch – c = 1.25 °C/W, Tc = 25 °C

θ γ θ

θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Switching Time Test Circuit Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

γ

Normalized Transient Thermal Impedance vs. Pulse Width

2SK3070(L),2SK3070(S)

9

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK3070(L),2SK3070(S)

10

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK3070(L),2SK3070(S)

11

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK3070(L),2SK3070(S)

12

Cautions

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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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