HEXFET® Power MOSFET
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
IRF7425PbF
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -15
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -12 A
IDM Pulsed Drain Current -60
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
V
DS
-20 V
R
DS(on) max
(@V
GS
= -4.5V)
8.2
R
DS(on) max
(@V
GS
= -2.5V)
13
Q
g (typical)
87 nC
I
D
(@T
A
= 25°C)
-15 A
mΩ
Features Benefits
Industry-standard pinout SO-8 Package ⇒Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1,Consumer qualification Increased Reliability
Form Quantity
Tube/Bulk 95 IRF7425PbF
Tape and Reel 4000 IRF7425TRPbF
Package Type
Standard Pack
Orderable Part Number
IRF7425PbF SO-8
Base Part Number
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
IRF7425PbF
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
-60
–––
–––
–––
-2.5
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 8.2 VGS = -4.5V, ID = -15A
––– ––– 13 VGS = -2.5V, ID = -13A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 87 130 ID = -15A
Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V
td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V
trRise Time ––– 20 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0Ω
tfFall Time ––– 160 ––– VGS = -4.5V
Ciss Input Capacitance ––– 7980 ––– VGS = 0V
Coss Output Capacitance ––– 1480 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 980 ––– ƒ = 1.0kHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Surface mounted on 1 in square Cu board, t ≤ 10sec.
IRF7425PbF
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
1.0 1.2 1.4 1.6 1.8 2.0 2.2
V = -15V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-15A
IRF7425PbF
4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
040 80 120 160
0
2
4
6
8
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-15A
V =-10V
DS
V =-16V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
1 10 100
0
2000
4000
6000
8000
10000
12000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
IRF7425PbF
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7425PbF
6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
1.0 2.0 3.0 4.0 5.0
-VGS, Gate -to -Source Voltage (V)
0.005
0.010
0.015
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -15A
0 102030405060
-ID , Drain Current (A)
0.005
0.006
0.007
0.008
0.009
0.010
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -4.5V
IRF7425PbF
7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
-VGS(th) , Variace ( V )
ID = -250μA
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
20
40
60
80
100
120
Power (W)
IRF7425PbF
8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS - 012 AA.
NOT E S :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROL LING DIME NS ION: MIL L IMET ER
3. DIME NS IONS ARE S H OWN IN MIL L IME T E RS [INCHE S ].
5 DIME NS ION DOE S NOT INCL U DE MOLD PROT RU S IONS .
6 DIME NS ION DOE S NOT INCL U DE MOLD PROT RU S IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBST RAT E.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F 7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF7425PbF
9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
MS L 1
(per JE DE C
J-S T D-020D
††
)
RoHS compliant
Yes
†
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level SO-8
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Date
Comments
•
Added ordering information on page 1.
•
Updated datasheet with new IR corporate template.
Revision History
10/29/2013