IRF7425PbF VDS -20 RDS(on) max HEXFET(R) Power MOSFET V (@VGS = -4.5V) 1 8 S 2 7 D S 3 6 D G 4 5 D m RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25C) 87 nC -15 A Package Type IRF7425PbF SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Base Part Number A D S 8.2 Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7425PbF IRF7425TRPbF Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 -15 -12 -60 2.5 1.6 20 12 -55 to + 150 V A W mW/C V C Thermal Resistance Parameter Maximum Junction-to-Ambient RJA 1 Max. Units 50 C/W www.irf.com (c) 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRF7425PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 --- --- --- -0.45 44 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.010 --- --- --- --- --- --- --- --- 87 18 21 13 20 230 160 7980 1480 980 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 8.2 VGS = -4.5V, ID = -15A m 13 VGS = -2.5V, ID = -13A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -15A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 130 ID = -15A 27 nC VDS = -10V 32 VGS = -4.5V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.5 --- --- -60 --- --- --- --- 120 160 -1.2 180 240 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com (c) 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRF7425PbF 1000 1000 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 10 1 -1.0V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C V DS = -15V 20s PULSE WIDTH 1.6 1.8 2.0 2.2 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 100 Fig 2. Typical Output Characteristics 2.0 1.4 1 -VDS , Drain-to-Source Voltage (V) 100 1.2 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 Fig 1. Typical Output Characteristics 0.1 1.0 -1.0V 1 -VDS , Drain-to-Source Voltage (V) 1 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP TOP www.irf.com (c) 2013 International Rectifier ID = -15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback October 29, 2013 IRF7425PbF 12000 -VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) 8 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 8000 6000 4000 Coss Crss 2000 0 1 10 4 2 0 40 80 120 160 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-16V VDS =-10V 6 0 100 ID = -15A 10 100 TJ = 150 C 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2013 International Rectifier 100us 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback October 29, 2013 100 IRF7425PbF 15 RD VDS VGS 12 D.U.T. -ID , Drain Current (A) RG - + 9 VDD VGS Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 10% 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 0.015 RDS (on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance () IRF7425PbF 0.010 ID = -15A 0.005 1.0 2.0 3.0 4.0 5.0 0.010 0.009 VGS = -2.5V 0.008 0.007 0.006 VGS = -4.5V 0.005 0 10 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V www.irf.com (c) 2013 International Rectifier IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit Submit Datasheet Feedback October 29, 2013 IRF7425PbF 3.0 120 -VGS(th) , Variace ( V ) 100 2.5 ID = -250A 2.0 Power (W) 80 60 40 20 1.5 0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature 7 www.irf.com (c) 2013 International Rectifier 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time Submit Datasheet Feedback October 29, 2013 IRF7425PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC e1 6X MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C y 0.10 [.004] A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com (c) 2013 International Rectifier Submit Datasheet Feedback October 29, 2013 IRF7425PbF SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Qualification information Consumer Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date 10/29/2013 Comments * Added ordering information on page 1. * Updated datasheet with new IR corporate template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2013 International Rectifier Submit Datasheet Feedback October 29, 2013