2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Power Dissipation (TC=25C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JC ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS ICEO VCE=28V ICEV VCE=55V, VBE(OFF)=1.5V ICEV VCE=30V, VBE(OFF)=1.5V, TC=200C IEBO VEB=3.5V BVCER IC=5.0mA, RBE=10 BVCEO IC=5.0mA BVEBO IC=100A VCE(SAT) IC=100mA, IB=20mA hFE VCE=5.0V, IC=50mA (2N3866 only) hFE VCE=5.0V, IC=50mA (2N3866A only) hFE fT fT Cob GPE VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866 only) VCE=15V, IC=50mA, f=200MHz (2N3866A only) VCB=28V, IE=0, f=1.0MHz VCC=28V, Pout=1.0W, f=400MHz (Figure 1.) VCC=28V, Pout=1.0W, f=400MHz (Figure 1.) UNITS V V V A A W 55 30 3.5 0.4 2.0 5.0 -65 to +200 35 MIN C C/W MAX 0.02 0.1 5.0 0.1 55 30 3.5 10 25 5.0 500 800 1.0 200 UNITS mA mA mA mA V V V V 200 3.0 10 45 MHz MHz pF dB % R1 (28-April 2005) Central TM 2N3866 2N3866A Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400 MHz Test Circuit TO-39 CASE - MECHANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C 0.040 1.02 D 0.240 0.260 6.10 6.60 E 0.500 12.70 F (DIA) 0.016 0.021 0.41 0.53 G (DIA) 0.200 5.08 H 0.100 2.54 I 0.028 0.034 0.71 0.86 J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (28-April 2005)