File Number 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A, 100V los(On) = 0.18.2 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The 2N6796 is an n-channel enhancemerit-mode silicon- gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The 2N6796 is supplied in the JEDEC TO-205AF (LOW PROFILE TO-39) metal package. Absolute Maximum Ratings: N-CHANNEL ENHANCEMENT MODE wo 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION GATE ) DRAIN SOURCE f {CASED 92CS-37555 JEDEC TO-20SAF Standard Power MOSFETs 2N6796 3-539Standard Power MOSFETs 2N6796 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) See Fig. 10 See Fig. 15 {MOSFET switching times are essentially independent of operating temperature.) Thermal Resistance Fehuc _Junction-to-Case [ ~ [| - [80 [rowT } RthsA _ Junction-to-Ambient L = [T - [8 [ecw] Free Air Operation __| Source-Drain Diode Switching Characteristics (Typical) tr Reverse Recovery Time 300 " Tons | Ty = 160C, ip = 8.00. dipict = 100Aius Orr Reverse Recovered Charge 15 [ # [Ty = 180C, ip ="8.0A, digict = 100A/us ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by ig + Lo. Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @) Repetitive Rating: Pulse width timited by max. junction temperature. See Transient Thermal Impedance Curve {Fig. 5). *JEDEC registered value kt 80 us PULSE TEST BO ut PULSE TEST Vos >!p(on) * Bpston} max 30 30 Zz Z as 5 3 x = = 20 = 20 e = & & Fa = = = Bois B15 z 5 Ty 126% = = a a Ty= 2590 310 i 10 4 Ty= -560C 5 to 20 30 40 50 Q 2 4 8 8 10 14 Vos. DRAIN-TO-SOURGE VOLTAGE (VOLTS) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 100 80 us PULSE 50 IS LIMITED BY Apsion) a . 2 g g 2 2 10 = z = = 5 s z = = e 3 2 2 z = = Z 10 5 a a 5 Ter ~ 05 FT Ty = 1800C MAX, Rinic = 5.0 KV 0.2 |} SINGLE PULSE ot 0 1 2 3 4 5 6 402 5 10 20 So 100 200 500 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SCURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 3-540Standard Power MOSFETs 2N6796 & a 3 2 2 = FE 10 $s 5S os oe ye arn az 02 ao . N ' , 2S a1 t zo t oz 2 2 = 0.05 36" 1 puTy Factor, a= 3 2r =e = = Rens = SB 002 PULSE 2. PER UNIT BASE = Ringe = S-0.0EG CW 8 THERMAL IN PEDANCE) 3. Tym - Te = Pom Zensclt 001 wd 2 5 4 2 5 yd 2 5 ye 2 5 wl 2 5 1a 2 10 1), SQUARE WAVE PULSE DURATION (SECONDS? Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 80 ws PULSE : Vos > 'pton) * "ster! max ~ s a Ty + 2500 ais. TRANSCONDUCTANCE (SIEMENS) lpn, REVERSE DRAIN CURRENT (AMPERES! 10 0 5 a i ae % 30 35 0 05 10 18 2.0 25 30 tp, DRAIN CURRENT (AMPERES) Vsp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 2.50 y 120 us 2.28 < z BS & 2.00 $ a & Z i = 1 2 - 2 < <5 1.05 SS 150 ae 26 ss SN ws 1.00 ga 126 =z as 35 3s Bz oss az 100 2 g Zz 080 Z 075 < ~ = a Q 0.85 = 050 2 2 > 0.80 = 02 0.75 0 60-40) -20 0 20 40 tO BO 100 120140 60-40 -20 0 20 40 60 80 100 120 140 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (2C) Fig. 3 Breakdown Voltage Vs. Temperature Fig. 9 Normatized On-Resistance Vs. Temperature 3-541Standard Power MOSFETs 2N6796 3-542 , CAPACITANCE ipF) oO 410 1 Cigg = Cys + Cgg, Cas SHORTED Coss * Cog Cy C, Can Ca? = Cas > Cog Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) a0 30 0 8 16 24 32 40 Vos. DRAIN TO SOURCE VOLTAGE IVOLTS} Gy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 0 T T t Fpsion MEASURED WITH CURRENT PULSE OF 26 ws BURATION. WITIAL Ty = 25C (HEATING a z 3 = os |- EFFECT OF 2.0 1s PULSE IS MINIMAL 8 3 = i 8 2 | s 2 oe + : = { 26 z Vgg 2 10V s = 2 oa = > 2 8 4 =z 2 < 2 02 S = LZ S a ~ 2 go Vg = 20 0 Q 10 20 20 40 $0 80 Fr} 50 5 100 126 150 Ip. DRAIN CURRENT (AMPERES) To, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 40 #9, POWER DISSIPATION (WATTS) Fig. 14 Power Vs. Temperature De 3% o rs) 0 @ Y 100 12000140 Te, CASE TEMPERATURE (C) ing CurveHP, BO10A PULSE GEN. NOTES: 1, LHOOG3 CASE GROUNDED. Standard Power MOSFETs 2N6796 } PULSE WIDTH Voston) +10V ___,_| INPUT sox oo 10%. Vestott) 9V INPUT PULSE RISE TIME INPUT PULSE FALL TIME % ta (on) Catt} TEKTRONIX 7623 osc. Vostott OUTPUT 10% 10% Voston) 1% NOTES: 2. GROUNDED CONNECTIONS COMMON TO GROUND PLANE ON BOARD. 3. PULSE WIOTH =3 ys, PERIOO*1 ms, AMPLITUDE=10V. Fig. 15 Switching 2. WHEN MEASURING RISE TIME, Vggion) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Vggiggf) SHALL BE SPECIFIED ON THE INPUT WAVEFOAM. THE INPUT TRANSITION AND DRAIN VOLTAGE RE- SPONSE DETECTOR SHALL HAVE RISE AND FALL RESPONSE TIMES SUCH THAT DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER THAN THE PRECISION OF MEASUREMENT. THE CURRENT SHALL BE SUFFI- CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS GREATER THAN THE PRECISION OF MEASUREMENT. Time Test Circuit NOTES: SET Vpg TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.11 PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Vg UNTIL THE SPECIFIED VALUE OF Ig AND Vp ARE OBTAINED. CASE TEMPERATURE = 25C. SELECT Rg SUCH THAT Ip ofig 2.5 1.0 Vie. Fig. 16 Safe Operating Area Test Circuit 3-543High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65