©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
2N6517
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
• Refer to 2N6515 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 350 V
VCEO Collector-Emitter Voltage 350 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCEO * Collector-Emitte r Breakdo wn Voltage IC=1mA, IB=0 350 V
BVCBO Collect or-B ase Break down Voltage IC=100µA, IE=0 350 V
BVEBO E mitter-B ase Break down Voltage IE=10µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=250V, IE=0 50 nA
IEBO Emitter Cut-off Current VEB=5V, IC=0 50 nA
hFE * DC Current Gain IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V
20
30
30
20
15
200
200
VCE (sat) Collector-Emitter Saturat ion Voltage IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
0.3
0.35
0.5
1
V
V
V
V
VBE (sat) Base-Emitter Saturat ion Voltage IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
0.75
0.85
0.9
V
V
V
Cob Output Capacitance VCB=20V, IE=0, f=1MHz 6 pF
fT* Current Gain Bandwidth Product IC=10mA, VCE=20V,
f=20MHz 40 200 MHz
VBE(on) Base Emitter On Voltage IC=100mA, VCE=10V 2 V
2N6517
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
2N6517
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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