MCCSEMI.COM
Rev.3-1-01012019
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MMBTA42
NPN Silicon High
Voltage Transistor
Power Dissipation (Note 1) PD225 mW
350 mW
Features
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Moisture Sensitivity Level 1
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Collector-Base Voltage VCBO 300 V
• Operating Junction Temperature Range: -55℃ to +150℃
• Storage Temperature Range: -55℃ to +150℃
• Thermal Resistance: 556℃/W Junction to Ambient(Note 1)
• Thermal Resistance: 357℃/W Junction to Ambient(Note 2)
Parameter Symbol Rating Unit
Maximum Ratings @ 25°C Unless Otherwise Specified
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6 V
Note 1. Device Mounted on FR–5 Board.
2. Device with Alumina Substrate.
PD
Continuous Collector Current IC500 mA
Power Dissipation (Note 2)
Marking: 1D
Internal Structure
3
2
11.BASE
2.EMITTER
3.COLLECTOR
SOT-23
0.079
2.000 inches
mm
0.031
0.800
0.035
0.900
0.037
0.950
0.037
0.950
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D0.034 0.041 0.85 1.05
E0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K0.012 0.020 0.30 0.51
DIMENSIONS
DIM INCHES MM NOTE
A
CB
D
E
F
GHJ
K
L
L0.020 0.50
0.007 0.20
Suggested Solder Pad Layout
12
3
MCCSEMI.COM
Rev.3-1-01012019 2/4
MMBTA42
Collector Cutoff Current ICBO 0.1 µA VCB=200V, IE=0
Base-Emitter Saturation Voltage VBE(sat) 0.9 VIC=20mA, IB=2mA
Collector-Emitter Saturation Voltage VCE(sat)
µA
VCE=10V, IC=10mA
DC Current Gain* hFE(3) 40 VCE=10V, IC=30mA
Collector output Capacitance Ccb 3pF
VCE=10V, IC=1mA
IC=20mA, IB=2mA
0.5 V
hFE(1) 25
IC=1mA, IB=0
IE=100µA, IC=0
VEB=6V, IC=0
V
V
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Parameter Symbol Min Typ Max Units Conditions
Collector-Base Breakdown Voltage V(BR)CBO 300 VIC=100µA, IE=0
Emitter-Base Breakdown Voltage V(BR)EBO 6
Collector-Emitter Breakdown Voltage* V(BR)CEO 300
Transition Frequency fT50
Emitter Cutoff Current IEBO 0.1
MHz
hFE(2) 40
VCB=20V, IE=0,f=1MHz
VCE=20V, IC=10mA, f=100MHz
*.Pulse test: Pulse Width≤300μs,Duty Cycle≤2.0%.
MCCSEMI.COM
Rev.3-1-01012019
Curve Characteristics
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MMBTA42
0 2 4 6 8 10 12 14 16 18 20 22
0
2
4
6
8
10
12
14
16
18
0.09mA
0.08mA
0.07mA
0.06mA
0.05mA
0.04mA
0.03mA
0.02mA
IB=0.01mA
Common Emitter
TA=25°C
Collector Current (mA)
Collector-Emitter Voltage (V)
Fig. 1 - Static Characteristics
1100.1 100
100
10
1000
Common Emitter
VCE= 10V
TA=100°C
DC Current Gain
Collector Current (mA)
Fig. 2 - DC Current Gain Characteristics
TA=25°C
1100.1 100
100
10
500
β=10
TA=100°C
Collector-Emitter Saturation Voltage (mV)
Collector Current (mA)
Fig. 3 - Collector-Emitter Saturation Voltage Characteristics
TA=25°C
1100.1 100
600
300
900
β=10
TA=100°C
Base-Emitter Saturation Voltage (mV)
Collector Current (mA)
Fig. 4 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
1
10
0.1
100
0.0 0.2 1.0 1.2
Common Emitter
VCE=10V
TA=100°C
TA=25°C
0.4 0.6 0.8
Base-Emitter Voltage (V)
Collcetor Current (mA)
Fig. 5 - Base-Emitter Voltage Characteristics
0 25 125 150
0
100
200
300
400
Collector Power Dissipation (mW)
50 75 100
Ambient Temperature (°C)
Fig. 6 - Collector Power Derating Curve
MCCSEMI.COM
Rev.3-1-01012019
Ordering Information
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF
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written approval of Micro Commercial Components Corporation.
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MMBTA42
