Product Summary
Part Number B VDSS RDS(on) ID
IRFY140CM 100V 0.077Ω16*A
Provisional Data Sheet No. PD 9.1287B
HEXFET
®
POWER MOSFET
HEXFET technology is the key to International Rectifier’ s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability . They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’ s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal ef fi-
ciency and reduces drain capacitance.
IRFY140CM
Features
nHermetically Sealed
nElectrically Isolated
nSimple Drive Requirements
nEase of Paralleling
N-CHANNEL
100 Volt, 0.077Ω HEXFET
Absolute Maximum Ratings
Parameter IRFY140CM Units
ID
@ VGS=10V, TC = 25°C Continuous Drain Current 16 *
ID @ VGS=10V, TC = 100°C Continuous Drain Current 16* A
IDM Pulsed Drain Current 100
PD @ TC = 25°C Max. Power Dissipation 100 W
Linear Derating Factor 0.8 W/K
VGS Gate-to-Source V oltage ±2 0 V
EAS Single Pulse A valance Energy 230 mJ
IAR Avalance Current 16* A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJOperating Junction -55 to 150
Tstg Storage Temperature Range °C
Lead Tempe rature 300 (0.063 in (1.6mm) from
case for 10 sec)
Weight 4.3 (typical) g
*ID current limited by pin diameter
°C
nCeramic Eyelets
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V , ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.1 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.077 VGS = 10V, ID = 16A
On-State Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, I D = 250µA
gfs Forward Transconductance 9.1 — — S ( )V
DS ≥ 15V, IDS = 16A
IDSS Zero Gate Voltage Drain Current — — 25
V
DS
= 0.8 x max. rating,V
GS
= 0V
— — 250 VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgT otal Gate Charge 30 — 59 VGS = 10V , ID = 16A
Qgs Gate-to-Source Charge 2.4 — 12 VDS = Max. Rating x 0.5
Qgd Gate-to-Drain (‘Miller’) Charge 12 — 30.7 see figures 6 and 13
td(on) Turn-On Delay Time — — 21 VDD = 50V, ID =16A, RG = 9.1Ω
tr Rise Time — — 145 VGS = 10V
td(off) Turn-Off Delay T ime — — 64
tfFall T ime — — 105 see figure 10
LDInternal Drain Inductance — 8.7 —
LSInternal Source Inductance — 8.7 —
Ciss Input Capacitance — 1660 — VGS = 0v, VDS = 25V
Coss Output Capacitance — 55 0 — pF f = 1.0MHz.
Crss Reverse Transfer Capacitance — 120 —
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case — — 1.25
RthJA Junction-to-Ambient — — 80 K/WTypical socket mount
RthCS Case-to-Sink — 0.21 — Mounting surface flat, smooth
Ω
µA
nC
nH
ns
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the internal
inductances.
nA
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max.
Units
Test Conditions
ISContinuous Source Current (Body Diode) — — 16
ISM Pulse Source Current (Body Diode) — — 100
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 16A, V GS = 0V
trr Reverse Recovery Time — — 400 ns Tj = 25°C, I F = 16A, di/dt ≤ 100 A/ µs
QRR Reverse Recovery Charge — — 2.4 µ C VDD ≤ 50 V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
IRFY140CM Device
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
Ω
see figure 5
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs. Temperature
Fig. 1 — Typical Output Characteristics
TC = 25°C
IRFY140CM Device
Fig. 2 — T ypical Output Characteristics
TC = 150°C
ID = 16A
ID = 25A
Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 7 — T ypical Source-to-Drain Diode
Forward V oltage Fig. 8 — Maximum Safe Operating Area
IRFY140CM Device
0
5
10
15
20
25
25 50 75 100 125 150
C
D
A
LIMITED BY PACKAGE
T , Case Temperature (°C)
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LI MI TED
BY R
DS(on)
Single Puls e
T
T = 150 C
= 25 C
J
C
o
o
V , Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
ID, Drain Current (A)
ID, Drain Current (Amps)
TC, Case Temperature (°C)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12c — Max. Avalanche Energy vs. Current
tp
V
(BR)DSS
I
AS
Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
-VDD
DRIVER
A
Fig. 13a — Gate Charge Test Circuit
IRFY140CM Device
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
P
t
2
1
t
DM
No te s:
1. Duty factor D = t / t
2 . Pea k T = P x Z + T
1
2
JDMthJCC
0
50
100
150
200
250
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I = 28A
D
DD
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-257AA
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
123
TO-257AA
NON-ST ANDARD PIN CONFIGURA TION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part T ype IRFY140C
CAUTION
BER YLLIA W ARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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http://www.irf.com/ Data and specifications subject to change without notice. 7/96
IRFY140CM Device Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 16A, VGS = 10V, 25 ≤ RG ≤ 200Ω (figure 12)
ISD ≤ 16A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W W/K = W/°C
Notes:
