Switching Transistor NPN Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
Unit
Vdc
Vdc
Vdc
mAdc
600
Rating
MMBT4401=2X
Device Marking
WEITRON
MMBT4401
1
2
3
BASE
COLLECTOR
EMITTER
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0)
Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc)
Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
0.1
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
Off C har acter istics
40
60
6.0
-
-
-
-
-
<
=<
=
Characteristics Symbol Min Max Unit
Electrical Characteristics (TA=25 C Unless Otherwise noted)
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Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
q
R JA
q
SOT-23
1
2
3
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Unit
Min Max
MMBT4401
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 20 mAdc, VCE= 10 Vdc, f=100MHz)
Collector-Base Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Emitter-Base Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz)
fT
Ccb
Ceb
hie
hre
hfe
hoe
250
-
-
-
0.1
1.0
40
1.0
6.5
MHz
pF
pF
k ohms
x 10-4
-
µmhos
30
500
8.0
15
30
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= 30 Vdc, VBE= 2.0 Vdc
Ic= 150 mAdc, IB1= 15 mAdc)
(Vcc= 30Vdc,
Ic= 150 mAdc, IB1=IB2= 15 mAdc)
td
tr
ts
tf
-
-
-
-
15
20
225
30
ns
ns
WEITRON
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 150 mAdc, VCE= 1.0Vdc)
(IC= 500 mAdc, VCE= 2.0Vdc)
Collector-Emitter Saturation Voltage (3)
(IC= 150 mAdc, IB= 15mAdc)
(IC= 500 mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (3)
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
20
40
80
100
40
-
-
-
-
300
-
-
0.4
0.75
0.95
1.2
On Characteristics
0.75
-
(3)
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Figure 3. Capacitances
REVERSE VOLTAGE (VOL
TS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1 2.0 5.0 10 20
2.0
30 50
CAPACITANCE (pF)
Q, CHARGE (nC)
3.0
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1
300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Cobo QT
QA
25 C 105 C
T R A NS IE NT C HA R AC T E R IS T IC S
3.01.00.50.30.2
0.3
0.2
30
Ccb
Figure 5. Turn-On T ime
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
I
C, COLLECTOR CURRENT (mA)
t, TIME (ns)
t, TIME (ns)
70
100
10 20 50 70 100 200 300 500
30
IC/IB
= 10
tr @ V CC = 30 V
tr @ V CC = 10 V
td
@ V EB = 2.0 V
td
@ V EB = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/I
B = 10
tr
tf
Figure 1. Turn-On T ime Figure 2. Turn-Off T ime
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V < 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 k
+30 V
200 WW
WCS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 kW
+30 V
200
CS* < 10 pF
-4.0 V
-
-
-
-
MMBT4401
WEITRON
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Figure 1 1. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
100
200
20
70
50
300
hfe , CURRENT GAIN
hie , INPUT IMPEDANCE (OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
30
5.0 7.0
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 13. V oltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RA TIO (X 10 )
re
-4
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
MMBT4401
UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
MMBT4401 UNIT 1
MMBT4401 UNIT 2
Figure 7. Storage T ime
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall T ime
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
ts, STORAGE TIME (ns)
4
tf, FALL TIME (ns)
10 20 50 70 100 200 300 500
30
100
200
30
70
50
300
10 20 50 70 100 200 300 500
30
ts4 = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/I
B = 10
u
WEITRON
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MMBT4401
STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 500.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25 C
0.070.050.030.020.01
10 mA 100 mA
10 20 30
500 mA
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT GAIN
0.5 2.0 3.0 10 50 70
0.2 0.3
0.2
100
1.00.7 500
30205.0 7.0
FE
TJ = 125 C
-55 C
2.0
200 300
25 C
VCE = 1.0 V
VCE = 10 V
Figure 17. On V oltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 18. T emperature Coefficients
IC, COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
+0.5
-1.0
-1.5
-2.0
500
TJ = 25 C
VBE(sat) @ I C/IB = 10
VCE(sat) @ I C/IB = 10
VBE @ VCE = 10 V
VC for V
CE(sat)
VB for V
BE
200
0.1 0.2 0.5
COEFFICIENT (mV/ C)
-2.5
1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
" "
MMBT4401
WEITRON
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MMBT4401
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
EG
M
L
H
J
T OP V IE W
K
C
SOT-23 Package Outline Dimensions Unit:mm
WEITRON
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