V
RRM
= 600 V - 1000 V
I
O
= 15 A
Features
KBPC-T/W Package
Mechanical Data
Parameter Symbol KBPC1506T/W KBPC1508T/W Unit
• High efficiency
• Metal case
Case: Mounted in the bridge encapsulation
Conditions
• Not ESD Sensitive
• Silicon junction
Mounting position: Hole for #10 screw
• Types from 600 V to 1000 V V
RRM
Single Phase Silicon
Brid
e Rectifier
KBPC1506T/W thru KBPC1510T/W
KBPC1510T/W
Maximum ratings at Tc
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Polarity: Marked on case
Repetitive peak reverse voltage V
RRM
600 800 V
RMS reverse voltage V
RMS
420 560 V
DC blocking voltage V
DC
600 800 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol KBPC1506T/W KBPC1508T/W Unit
Maximum average forward rectified
current I
O
15 15 A
Peak forward surge current I
FSM
300 300 A
Maximum instantaneous forward
voltage per leg 1.1 1.1
55
500 500
T
ical
unction ca
acitance
1
C
j
300 300 pF
Thermal characteristics
Typical thermal resistance
2
R
ΘJC
2.3 2.3 °C/W
- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.
- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink
300
2.3
V
Electrical characteristics at Tc = 25 °C, unless otherwise specified
T
c
= 25 °C
I
F
= 7.5 A
Conditions
1000
700
-55 to 150
Maximum DC reverse current at
rated DC blocking voltage per leg I
R
T
c
= 100 °C μA
5
-55 to 150
1000
KBPC1510T/W
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
T
c
= 55 °C 15
8.3 ms half sine-wave
300
500
V
F
1.1
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