TLHE4200 VISHAY Vishay Semiconductors High Intensity LED in 3 mm Tinted Non-Diffused Package Description This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package. The small viewing angle of these devices provides a high brightness. All packing units are categorized in luminous intensity and color groups. That allows users to assemble with uniform appearance. 19222 e2 Pb Pb-free Features * * * * * * * * AlInGaP technology Standard 3 mm (T-1) package Small mechanical tolerances Suitable for DC and high peak current Small viewing angle Very high intensity Luminous intensity color categorized Lead-free device Applications Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Parts Table Part TLHE4200 Color, Luminous Intensity Yellow, IV > 40 mcd Angle of Half Intensity () Technology 22 AllnGaP on GaAs Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLHE4200 Parameter Test condition Symbol Value VR 5 V IF 30 mA IFSM 0.1 A PV 80 mW Tj 100 C Operating temperature range Tamb - 40 to + 100 C Storage temperature range Tstg - 55 to + 100 C Tsd 260 C RthJA 400 K/W Reverse voltage DC Forward current Tamb 60 C Surge forward current tp 10 s Power dissipation Tamb 60 C Junction temperature Soldering temperature Thermal resistance junction/ ambient Document Number 83104 Rev. 1.4, 30-Aug-04 t 5 s, 2 mm from body Unit www.vishay.com 1 TLHE4200 VISHAY Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Yellow TLHE4200 Parameter Symbol Min Typ. IF = 10 mA IV 40 120 Dominant wavelength IF = 10 mA d 581 588 Peak wavelength IF = 10 mA p 590 nm Angle of half intensity IF = 10 mA 22 deg Luminous intensity Test condition 1) Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Max Unit mcd 594 1.9 nm 2.6 V 5 V 15 pF in one Packing Unit IVmin/IVmax 0.5 Typical Characteristics (Tamb = 25 C unless otherwise specified) 0 IVrel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 0 0 20 40 60 80 0.9 50 0.8 60 70 0.7 80 0.4 0.2 0 0.2 0.4 0.6 Figure 3. Rel. Luminous Intensity vs. Angular Displacement 100 50 I F - Forward Current ( mA ) IF - Forward Current ( mA ) 40 0.6 60 40 30 20 10 10 1 1.0 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 2 30 95 10041 Figure 1. Power Dissipation vs. Ambient Temperature 95 10894 20 1.0 100 Tamb - Ambient Temperature ( C ) 95 10887 10 95 10878 1.5 2.0 2.5 3.0 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Document Number 83104 Rev. 1.4, 30-Aug-04 TLHE4200 VISHAY Vishay Semiconductors IF = 20 mA 1.4 I V rel - Relative Luminous Intensity I V rel - Relative Luminous Intensity 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 95 10880 95 10881 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature IV rel - Relative Luminous Intensity 1.2 I F = 20 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 - Wavelength ( nm ) Figure 8. Relative Intensity vs. Wavelength 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 96 11589 1 2 5 1 0.5 0.2 10 20 0.1 0.05 50 I F (mA) 0.02 t p /T I Vrel - Relative Luminous Intensity Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 10 1.0 0.1 0.01 1 96 11588 10 100 I F - Forward Current ( mA ) Figure 7. Relative Luminous Intensity vs. Forward Current Document Number 83104 Rev. 1.4, 30-Aug-04 www.vishay.com 3 TLHE4200 VISHAY Vishay Semiconductors Package Dimensions in mm 95 10913 www.vishay.com 4 Document Number 83104 Rev. 1.4, 30-Aug-04 TLHE4200 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83104 Rev. 1.4, 30-Aug-04 www.vishay.com 5