OKI Semiconductor MSC23436A-xxBS12/DS1i12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs (4M x 4) in SO] packages and four 4-Mb DRMAs (4Mx1) in SOJ packages mounted with twelve decoupling capacitors on a72-pin glass epoxy single-inline package. This module is generally used for memory expansion in parity applications such as workstations. FEATURES 4-Meg x 36-bit organization * 72-Pin Socket Insertable Module MSC23436A-xxBS12 : Gold tab MSC23436A-xxDS12 __: Solder tab Single 5 V supply 10% tolerance * Access times : 60, 70, 80 ns *Input : TTL compatible * Output : TTL compatible, 3-state * Refresh : 2048 cycles/32 ms CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability * Fast Page Mode capability PRODUCT FAMILY Family Access Time (Max.} Cycle Time Power Dissipation trac | taa | teac (Min.) _ | Operating (Max.)| Standby (Max.) MSC23436A-60B512/D812 60ns } 30ns | 15ns 110 ns 7480 mW 66 mW MSC23436A-70B812/D812 7Ons | 35ns | 20ns 130 ns 6820 mW (MOS level) MSC23436A-80B512/D812 BOns | 40ns | 20ns 150 ns. 6160 mW 185MSC 23436A-xxBS12/DS812 OKI Semiconductor PIN CONFIGURATION MSC23436A-xxBS12/D812 107.95 +0.2 9.3 Max. 101.19 Typ. 3.18 25.4 +0.2 Ty. Typ] 4 ass 3.50 Min, 2.03 Typ. i +0.1 6.35 Typ. . . . ; 127 *84, 1 The common size difference of the board width 12.5 mm of its height is specified as +0.2. The value above 12.5 mm is specified as 20.5. Pin No. |Pin Name! | Pin No. |/Pin Name] | Pin No. |Pin Name| | Pin No. [Pin Name] | Pin No. |Pin Name 1 Vgs 16 A4 34 A8 46 Nc 61 pat 2 Dad 17 AS 32 Ag 47 WE 62 Da33 3 pai 18 AG 33 NC 48 NC 63 Da15 4 001 19 AIO 34 RAS2 49 peg 64 Da34 5 pai9 20 Da4 35 Da26 50 Da27 65 DQ16 6 naz 21 paz2 36 pas 51 pate 66 NC 7 pa20 22 Das 37 0017 2 pazs 67 | PDI. 8 0a3 23 DQ23 38 0035 53 pati 68 _ | Pde 9 baat 24 DQ6 39 Vsg 54 pa29 69 PD3 10 Vec 25 ba24 40 CASO 55 pai2 70 Pp4 11 NC 26 DQ? 41 CAS? 56 Da3I0 71 NC 12 AQ 27 oa25 42 CASS 57 DQI3 72 Vs 13 Al 28 A? 43 CAST 58 DQ31 14 A2 29 NC 44 RASO 59 Vec 15 A3 30 Veo 45 NC 60 0032 Presence Detect Pins Pin No, PinNeme | coasi2/0St2 | -70BS1Z/DS12 | -s0BS12/D812 67 PDI Vsg Vss Vsg 68 PD2 NC NC NC 69 PD3 NC Vss NC 70 PD4 NC NG Vs 186OKI Semiconductor MSC23436A-xxBS12/DS12 BLOCK DIAGRAM AQ -A10 + WE #{ A0- a19 DQ | BOO #+{ a0 -atg DQ F DAIS _ =e bd; 002 =~ DQ }--bda20 CASO CAS D0 _ Boa CAS2 CAS pa | baat Vcc -Vs5 iy Vec Vss D7 $| AO-Ata DQ }- bad | ao-a1g 0 | Daz2 RAS DQ + DO5 RAS DQ -- 0023 DO + 006 =n BOF DO24 ors pa ++ pa7 ow oa | pas GE CE Vee Vss ib Vee V5 IS @ AD-A10 @-| AQ- Al0 RAS D bd8 RAS DB DQ26 CAS Q ir TAS a ir WE WE Vee Vsg Vee Vss @4 AQ Ato a Tora 9] A0-a10 ba t Oo RAS ba - D011 RAS DQ -- Da2g CAST CAS iq |_ pate CASS CAS ng |_aa0 We te We oe Vec V5 ib Vec Vss Ib 4 AD -A10 DQ + Bao13 AOD- AIO DQ }-- 0Q31 rl mag 00 |-pa14 Tle 00 | 0032 CHS Ba }+- pQ15 TAS BO |} -- B0A33 CAS po + nat6 1&5 bab. pasa e4-7WE of WE Vcc Vss ib Vee Vg v AQ-A10 _ AQ-A10 RAS CO fe 017 RAS D fe D035 os of! ms 0 |f |__| WE \__] WE Vee Vsg Voc Vss Vee so Bo m_ @ - J -- te ee e cit cl Vgg + 187MSC23436A-xxBS12/DS12 OKI Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative to Vss Vin, Vout -1.0t0 7.0 Vv Voltage Vec Supply Relative to Vss Vee -1.0 to 7.0 Vv Short Circuit Output Current los 50 mA Power Dissipation Pp 12 Ww Operating Temperature Topr Oto 70 C Storage Temperature Tstg 40 to 125 C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions {Ta = 0C to 70C} Parameter Symbol! Min. Typ. Max. Unit Voc 45 5.0 5.5 Vv Power Supply Voltage pply womag Vss 0 0 0 v Input High Voltage Vin 2.4 6.5 V Input Low Voltage Vit -1.0 _ 0.8 V Capacitance (Ta = 25C, f = 1 MH} Parameter Symbol Typ. Max. Unit Input Capacitance (AO - A10) Cini _ 83 pF Input Capacitance (WE) Cine _ 95 pF tnput Capacitance (RASO, RAS2) Cina _ 50 pF input Capacitance (CASO - CAS3) Cing _ 28 pF 0 Capacitance (DQ0 - 007, _ p09 - 0016, 8418 - Daz5, Daz - 0034) Coat 16 pF 1/0 Capacitance Cpoz _ 19 oF (008, DQ17, D026, DQ35) Note: Capacitance measured with Boonton Meter. 188OKI Semiconductor DC Characteristics MSC23436A-xxBS12/DS12 (Vcc = 5 V 210%, Ta = 0C to 70C) MSC24436A | MSC234396A | MSC29436A Parameter Symbot Condition -608S12/DS12 | -70BS12/DS12 | -80BS12/DS12 | Unit |Note Min. | Max. | Min. | Max. | Min. | Max. OVSViS6.5V; Input Leakage Current Iki | All other pins not | -120 | 120 | -120 | 120 | -120] 120 WA under fest = 0 V Output Leakage Current | tio Dre veees y | 10} 10 | 10; 10 | -10) 10 | ua Output High Voltage Vou | loy =-5.0 mA 2.4 Vec 2.4 Voc 2.4 Vec Vv Output Low Voltage Vor {lor = 4.2 mA 0 0.4 0 0.4 0 0.4 Vv Average Power SAS AEE Supply Current leer RAS, CAS cycling, + 19607 | 1240} ~ | 1120/ mA/] 1,2 . tac = Min. (Operating) RAS, CAS = Vin _ 24 | 24 {| 24 | maj 1 Power Supply loco | RAS, CAS Current (Standby} > Veo 0.2 V _ 12 _ 12 _ 12} mA} 1 Average Power RAS cycling, Supply Current Icca | CAS = Vin, | 1360) | 1240 | | 1120; mA] 1,2 (RAS-only Retresh) tac = Min. Average Power RAS cycting, Supply Current Iccs | CAS before RAS, | 1360} | 1240] | 1120] mA] 1,2 (CAS before RAS Refresh) tac = Min. Average Power RAS = Vi, Supply Current leer | CAS cycling, | 1200} -- | 1080; | 960 | mA! 1,3 (Fast Page Mode) tpc = Min. Notes: 1. Specified values are obtained with the output open. 2. Address can be changed once or less while RAS=Vj,. 3. Address can be changed once or less while CAS=Vjq1. 189MSC23436A-xxBS12/DS12 OKI Semiconductor AC Characteristics (1/2) (Veco = 5 V +10%, Ta=O0C to 70C) = Note 1,2,3 MSC23436A | MSC23436A | MSC23436A Parameter Symbot| -60BS$12/DS$12 | -70BS12/D512 | -80B$12/0S12 | Unit) Note 1 Min. | Max. | Min. | Max. | Min. | Max. Random Read or Write Cycle Time trc 110 130 _ 150 _ ns Fast Page Mode Cycle Time ter 40 _ 45 _ 50 ns Access Time from RAS trac | 60 _ 70 _ 80 | m8 145.6 Access Time trom CAS teac | 15 20 20 : ns | 45 Access Time from Column Address taa _ 30 _ 35 _ 40 ns | 4,6 Access Time from CAS Precharge tcpa | 35 _ 40 _ 45 ns 4 Output Low Impedance Time from CAS tez 0 _ 0 => 0 _ ns 4 Output Buffer Turn-off Delay Time torr 0 15 0 20 0 20 | mi 7 Transition Time tr 3 50 3 50 3 50 ns 3 Refresh Period tREF _ 32 32 _ 32 ms RAS Precharge Time trp 40 50 _ 60 ~ ns RAS Pulse Width teas | 60 | 10K | 76 | 10K | 80 | 10K | ns RAS Pulse Width (Fast Page Mode) trasp| 60 | 100K} 70 | 100K | 80 | 100K | ns RAS Hold Time trsH 15 _ 20 20 | as] CAS Precharge Time tep | 10 10 10 | as} CAS Pulse Width tcas | 15 10K 20 10K 20 10K | ns CAS Hold Time tesy | 60 70 80 ns CAS to RAS Precharge Time tere | 10 _ 10 _ 10 _ ns RAS to CAS Delay Time taco | 20 45 20 50 20 60 | ns | RAS to Column Address Delay Time trap 15 30 15 35 15 40 ns 6 Row Address Set-up Time tasR 0 _ 0 _ 0 _ ns Row Address Hold Time tray 10 _ 10 _ 15 _ ns Column Address Set-up Time tasc 0 _ 0 _ 0 _ ns Column Address Hold Time tcaH 15 _ 15 _ 15 | ms) Column Address Hold Time trom RAS _tan 50 _ 55 | 6 | ns Column Address to RAS Lead Time tw | 30; | 35 | | 40 | | os 190ORCI Semiconductor MSC23436A-xxBS12/0812 AC Characteristics (2/2) (Voc = 5 V 210%, Ta= 0C to 70C) Note 1,2,3 MSC23436A MSC23436A MSC23436A Parameter Symbol] -60B$12/DS12 ] -708S12/DS12 | -80BS12/DS12 | Unit | Note Min. | Max. | Min. | Max. | Min. | Max. Read Command Set-up Time tres 0 _ 0 _ 0 _ ns Read Command Hold Time tac 0 _ 0 _ 0 _ fs 8 Read Command Hald Time referenced to RAS | tran 0 _ 0 _ 0 _ ns 8 Write Command Set-up Time twes 0 _ 0 _ 0 _ ns Write Command Hald Time tweH 10 _ 15 _ 15 _ ns Write Command Hold Time from RAS twern | 45 _ 55 _ 60 | ons Write Command Pulse Width twe 10 _ 10 _ 10 _ ns Write Command to RAS Lead Time taw. | 15 | 20 _ 20 | | ns Write Command to CAS Lead Time tow. | 15 | 20 20 | ns Data-in Set-up Time tos 0 _ 0 _ 0 _ ns Data-in Hold Time tou 15 _ 15 _ 15 _ ns Data-in Hold Time from RAS tpHR | 50 55 _ 60 | o_s CAS Active Delay Time from RAS Precharge| tapc | 10 _ 10 10 | ns RAS to CAS Set-up Time (CAS before RAS)| tesa | 10 | 1 10 | | ns RAS to CAS Hold Time (CAS before RAS} | tcun | 20 | 20 20 | | ns CAS Precharge Time (Refresh Counter Test}| tcpr | 40 | 40 _ 40 | | ns WE to RAS Precharge Time (CAS before BAS)| twrs | 10 10 10 {ns WE Hold Time from RAS (CAS betore RAS)| twry | 10 | 10 10 | {ns 191MSC23436A-xxBS12/DS12 OKI Semiconductor Notes: 192 1. A start-up delay of 200 ys is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. . AC mesurement assume ty =5 ns. - Vin Min.) and Vi_ (Max.) are reference levels for measuring input timing signals. Transition times are measured between Vi and Vj,. . Measured with a load circuit equivalent to 2 TTL loads and 100 pF. . Operation within the tpcp (Max.) limit ensures that trac (Max.) can be met. trop (Max.) is specified as a reference point only. If tcp is greater than the specified tac (Max.) limit, access time is controlled by tcac. . Operation within the tpap (Max.) limit ensures that trac (Max.) can be met. trap (Max.) is specified as a reference point only. Ifty ap is greater than the specified trap (Max.) limit, access time is controlled by ta. - topr (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. - tRcH Or tpry must be satisfied for a read cycle. See ADDENDUM D for AC Timing Waveforms