© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 3 1Publication Order Number:
MPS650/D
NPN − MPS650, MPS651;
PNP − MPS750, MPS751
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPS650; MPS750
MPS651; MPS751
VCE 40
60
Vdc
Collector−Base Voltage
MPS650; MPS750
MPS651; MPS751
VCB 60
80
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC2.0 Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient VCE 200 °C/W
Thermal Resistance, Junction−to−Case VCB 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
12312
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
MPS
xxx
AYWW G
G
xxx = 650, 750, 651, or 751
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
NPN − MPS650, MPS651; PNP − MPS750, MPS751
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) MPS650, MPS750
MPS651, MPS751
V(BR)CEO 40
60 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 ) MPS650, MPS750
MPS651, MPS751
V(BR)CBO 60
80 −
−
Vdc
Emitter−Base Breakdown Voltage
(IC = 0, IE = 10 mAdc) V(BR)EBO 5.0 − Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) MPS650, MPS750
(VCB = 80 Vdc, IE = 0) MPS651, MPS751
ICBO −
−0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0) IEBO − 0.1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE 75
75
75
40
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat) −
−0.5
0.3
Vdc
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 2.0 V) VBE(on) − 1.0 Vdc
Base−Emitter Saturation V oltage
(IC = 1.0 A, IB = 100 mA) VBE(sat) − 1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT75 − MHz
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. MPS650, MPS651
Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
hFE, DC CURRENT GAIN
300
0
VCE = 2.0 V
TJ = 125°C
25°C
−55 °C
NPN
IC, COLLECTOR CURRENT (mA)
−10 −20 −50 −100 −200 −500
hFE, DC CURRENT GAIN
250
0
PNP
30
60
90
120
150
180
210
240
270
20 50 100 200 500 1.0 A 2.0 A 4.0 A
25
50
75
100
125
200
175
150
225
−1.0 A −2.0 A −4.0 A
VCE = −2.0 V
TJ = 125°C
25°C
−55 °C
Figure 2. MPS750, MPS751
Typical DC Current Gain
NPN − MPS650, MPS651; PNP − MPS750, MPS751
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
50
V, VOLTAGE (VOLTS)
2.0
0
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
Figure 3. MPS650, MPS651
On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100 200 500 1.0 A 2.0 A 4.0 A
NPN
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
Figure 4. MPS750, MPS751
On Voltages
−50
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.4
−0.8
−0.6
−0.2
−100 −200 −500 −1.0 A −2.0 A −4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
PNP
VBE(on) @ VCE = 2.0 V
Figure 5. MPS650, MPS651
Collector Saturation Region
IB, BASE CURRENT (mA)
0.05
1.0
0
NPN
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
TJ = 25°C
IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A
−10
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−0.02
−0.01
−1.0 −2.0 −5.0 −10 −20 −50 −100
100 ms
1.0 ms
TA = 25°CTC = 25°C
MPS75
0
MPS75
1
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−0.05
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
PNP
IB, BASE CURRENT (mA)
PNP
Figure 6. MPS750, MPS751
Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TJ = 25°C
IC = −10 mA IC = −100 mA
IC = −500 mA IC = −2.0 A
−0.05
−1.0
0
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
−0.7
−0.8
−0.9
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100−200 −500
10
4.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
IC, COLLECTOR CURRENT
1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. MPS650, MPS651 SOA,
Safe Operating Area
TA = 25°C
1.0 ms
TC = 25°C
100 ms
MPS65
0
MPS65
1
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Figure 8. MPS750, MPS751 SOA,
Safe Operating Area
NPN
NPN − MPS650, MPS651; PNP − MPS750, MPS751
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping†
MPS650 TO−92 5000 Units / Bulk
MPS650G TO−92
(Pb−Free) 5000 Units / Bulk
MPS650RLRAG TO−92
(Pb−Free) 2000 / Tape & Reel
MPS650ZL1G TO−92
(Pb−Free) 2000 / Tape & Ammunition
MPS651 TO−92 5000 Units / Bulk
MPS651G TO−92
(Pb−Free) 5000 Units / Bulk
MPS651RLRAG TO−92
(Pb−Free) 2000 / Tape & Reel
MPS651RLRM TO−92 2000 / Tape & Ammunition
MPS651RLRMG TO−92
(Pb−Free) 2000 / Tape & Ammunition
MPS750G TO−92
(Pb−Free) 5000 Units / Bulk
MPS750RLRAG TO−92
(Pb−Free) 2000 / Tape & Reel
MPS750RLRP TO−92 2000 / Tape & Ammunition
MPS750RLRPG TO−92
(Pb−Free) 2000 / Tape & Ammunition
MPS751 TO−92 5000 Units / Bulk
MPS751G TO−92
(Pb−Free) 5000 Units / Bulk
MPS751RLRA TO−92 2000 / Tape & Reel
MPS751RLRAG TO−92
(Pb−Free) 2000 / Tape & Reel
MPS751RLRP TO−92 2000 / Tape & Ammunition
MPS751RLRPG TO−92
(Pb−Free) 2000 / Tape & Ammunition
MPS751ZL1G TO−92
(Pb−Free) 2000 / Tape & Ammunition
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NPN − MPS650, MPS651; PNP − MPS750, MPS751
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 −−−
N2.04 2.66
P1.50 4.00
R2.93 −−−
V3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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