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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FQD2N90 / FQU2N90
N-Channel QFET® MOSFET
900 V, 1.7 A, 7.2 Ω
Description
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
GDS
I-PAK
D-PAK
G
S
D
G
S
D
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
Unit
RJC Thermal Resistance, Junction to Case, Max. 2.5
oC/W
RJA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 110
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max. 50
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
* * ()) *
4 0,-261 % & '
0,%))61 % )7 '
4 8 9 7 '
* :* ±;) *
< 8'!< %&) =
4 '! % & '
< +!'!< 2 ) =
!5 8>+!!5 ? ) *5
880,-261@ - 2 A
80,-261 2) A
"!-26 ) ? A56
+ 22B%2) 6
C
%572 ;)) 6
Symbol Parameter
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
Unit
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Semiconductor Components Industries, LLC, 2017 Publication Order Number:
February, 2017, Rev. 1.6 FQD2N90/FQU2N90/D
1
Package Marking and Ordering Information
Part Number Top Mark Package Reel Size Tape Width Quantity
FQD2N90FQD2N90TM D-PAK 330 mm 16 mm 2500 units
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 111 mH, IAS = 1.7 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 2.2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
Packing Method
Tape and Reel
FQU2N90S
FQU2N90TU_WS I-PAK N/A N/A 75 units
Tube
Electrical Characteristics TC = 25oC unless otherwise noted.
D* D>* *,)*4,-2)µ'()) *
∆D*
5∆
D>*
4,-2)µ'+-26 % ) *56
4 E:* *,())**,)* %) µ'
*,&-)*,%-26 %)) µ'
4 :D/> *,;)**,)* %)) '
4 :D/>+! *,;)**,)* %)) '
* :* *,*4,-2)µ'; ) 2 ) *
+
+
*,%)*4,) 72'
2 9 & - Ω
*,2)*4,) 72' % &
4 *,-2**,)*
,% )F#
;() 2))
?2 9)
+! 2 2 & )
*,?2)*4,- -'
+,-2Ω
%2 ?)
+ ;2 7)
-) 2)
;) &)
G: *,&-)*4,-.-'
*,%)*
%- %2
G : - 7
G : 9 %
4C % & '
4 C8 9 7 '
* * *,)*4,% &' % ? *
+!+! *,)*4,- -'
45,%))'5µ
?))
G +!+! % 9 µ
FQU2N90
FQU2N90TU_AM002 I-PAK N/A N/A 75 units
Tube
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2
3
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
!
Ω
!" #
!
"#$%
!" #
!
"
#$
%#&'
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4
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
!
&
!'( # ) *
+ ,- ) . /+ '
0 1 2& !
µ
µ
!"#!
$
!"
#
%
$#%
&
()*$$"&+ ',)*$$
#$
-.!
#$
/
#$
''##$
"
ZJC(t), Thermal Response [oC/W]
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5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
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6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
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7
Mechanical Dimensions
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
www.onsemi.com
8
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
Mechanical Dimensions
www.onsemi.com
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON
Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any
support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance
may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey
any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or
any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer
purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON
Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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