SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,62 TYPE No. G13793 CS2368t TE3663 BF384 PET8101 cs918 * MT1061 ME8101t RT3101 BF 168 Q6EPt 2N1990W A108 A115 C13415 Gl2711 GI2714 GI3707 GI3710 SPC50G ST503 ST1633 TE3415 V220t TK71 TK70 HVT600 HVT 1000 2N930/51 FTO23 HT401 2N2356AD 110710 D12x043t A133 A322 IN IME DISS. | fab FREE @25C AIR 4am 250m 2.5m 250m |640MA 250m_ | 700M8A|2.0m .#m 250m |/800M8 [2.5m m 250m /800M [2.5m 250m |960MA fm 250m (1.368 |1.7m . Fm 250m |[1.5G8 [2.0m . fm 250m |1.7G8 | 1.6m * 260m* |550Ms [2.0m m 280m |250M5A/588u 300m 3.0m 300m 2.0m 300m 2.0m 300m 2.4m 300m 300m 300m 300m 300m 300m 300m 300m 300m 300m |2.0M 300m |5.5M 300m |6.0M 300m |6.0M 300m | 30M84 300m | 40M5A|2.5m 300m | 40Ma |2.0m 300m | 50M84/1.7m 300m | 50MSA/2.0m 300m | 50MSA/1.7m 300m | 6OMSA!2.0m 300m 60M8 |2.0m D.A.T.A. AM P J IN ORDER OF Icbo @MAX Veb .50ud 10% 2.0mg | 25 5.0m |220 60 20mg |180 2.0m |120 20m [300 10m | 100 90 6.0 4.5 100ng 2.0 | 50m |5.0u 5.0 |500m |100n 5nZ 204 35 TA : 4A .O1u 2.5 A 10nd 40 ta# 10ug | 1600/1 40 tA : : A 20u 3. 4.0mZ| 20 tA 100m |100n |5.0 |2.0md |400 SYMBOLS AND CODES EXPLAINED IN INTERPRETER MAX COLLECTOR DISSIPATION Cob |STRUC|Y200 |E 0 -TURE s/a |AD TO200/D E TO18 | A R97a TO106/A X85c R110 R97a TO72 R97b u TO72 TO18 u46 A R110 A TO18 jA TO18 | A a R127a 1D a R97d R97d TO18 TO18 R38 TO18 TO18 a R97a ZA18 62b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUCTURE|M/MAX. /Y200 A|TEMP| s/a T0200 TO18 u51 112