C4D20120A-Silicon Carbide Schottky Diode VRRM = 1200 V Z-RecTM Rectifier Features * * * * * = 20 A Qc =130 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching Benefits * * * * * IF TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications * * * Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D20120A TO-220-2 C4D20120 Maximum Ratings (TC=25C unless otherwise specified) Symbol Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V DC Peak Reverse Voltage 1200 V Maximum DC Current 27 A TC=135C, no AC component IFRM Repetitive Peak Forward Surge Current 91 61 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 130 110 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse Ptot Power Dissipation 242 104 W TC=25C TC=110C TC Maximum Case Temperature 135 C TJ Operating Junction Range -55 to +175 C Tstg Storage Temperature Range -55 to +135 C 1 8.8 Nm lbf-in VR IF(AVG) .B D20120A Rev Datasheet: C4 Parameter TO-220 Mounting Torque Note M3 Screw 6-32 Screw Subject to change without notice. www.cree.com/power 1 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 20 A TJ=25C IF = 20 A TJ=175C IR Reverse Current 35 65 200 400 A VR = 1200 V TJ=25C VR = 1200 V TJ=175C QC Total Capacitive Charge 130 nC VR = 1200 V, IF = 20A di/dt = 200 A/s TJ = 25C C Total Capacitance 1500 93 67 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz VR = 800 V, TJ = 25C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RJC Thermal Resistance from Junction to Case 0.62 Max. Unit Test Conditions Note C/W Typical Performance 40 1 TJ=-55C TJ= 25C TJ= 75C TJ =125C TJ =175C 35 30 0.9 0.8 0.7 IR (mA) IF (A) 25 20 15 0.6 0.5 0.4 0.3 10 TJ=-55C TJ= 25C TJ= 75C TJ =125C TJ =175C 0.2 5 0.1 0 0 1 2 3 VF (V) Figure 1. Forward Characteristics 2 C4D20120A Rev. B 4 0 0 500 1000 VR (V) Figure 2. Reverse Characteristics 1500 Typical Performance 140 250 120 10% 30% 50% 70% DC 80 150 PTot (W) IF(peak) (A) 100 200 Duty Duty Duty Duty 60 100 40 50 20 0 25 50 75 100 125 150 0 175 25 TC C 50 75 100 125 150 175 TC C Figure 4. Power Derating Figure 3. Current Derating 140 1600 120 1400 1200 100 1000 C (pF) Qrr (nC) 80 60 40 600 400 200 20 0 0 0 200 400 600 800 1000 1200 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 800 C4D20120A Rev. B 0.1 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Thermal Resistance (C/W) 1 0.1 0.01 0.001 0.0001 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 T (Sec) Figure 7. Transient Thermal Impedance Diode Model Diode Model CSD04060 VfVTfT== VTV+T+If*R If*RT T -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.97+(T -1.40*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.023+(T J* 2.71*10 ) Note: Tj = Diode Junction Temperature In Degrees Celcius VT 4 C4D20120A Rev. B RT 10 Package Dimensions Package TO-220-2 A P F J C Q X T Z Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 A E B Y G Max D S E U H L M PIN 1 PIN 2 .153 2.591 .102.143 .112 .337 8.560 1.105 .337 1.147 .590 .610 14.986 .500 .550 .149 .153 3.785 R 0.197 1.127 1.147 28.626 .025 .550 .036 .530 13.462 M J N L R 0.010 .045 .028 .195 .036 .045 .055 .165 .195 .205 .170.048 .180 M T S T U U V V WW X X Y Y z CASE M illim eters .120 2.540 M in M ax .337 5.664 10.033 10.414 .615 14.986 5.969 6.477 F C N Q P S Q W N Inc hes .100 M in M ax .223 .395 .410 .590 .255 .235 G D E H F J G L H P V Millimeters Min CP OS B D 1 2 Inches POS Z .054 6 1.219 3 3 5 3 5 3 5 .094 .100 .110 .014.014 .021 3 3 5 .395 .385 .410 .130 .150 .130 8.560 15.621 3.886 8.560 28.067 29.134 15.494 12.700 13.970 3.886 R 0.197 29.134 .635 .914 13.970 .055 R 0.2541.143 .711 .914 .205 4.953 1.143 1.397 .185 4.191 4.953 5.207 .054 1.219 4.318 4.572 .0483 3 3.632 2.845 3.048 1.397 5.207 4.699 1.372 3 1.371 6 63 3 6 3 .110 2.54 .025 .356 53 5 3 5 2.388 2.794 .356 .533 6 3 5.5 10.033 .410 53 10.414 9.779 10.414 3.302 .150 3.810 3.302 3.810 6 2.794 .635 5.5 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C4D20120A TO-220-2 C4D20120 "The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006." This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright (c) 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 5 C4D20120A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power