1
Subject to change without notice.
www.cree.com/power
Datasheet: C4D20120A Rev. B
C4D20120A–Silicon Carbide Schottky Diode
Z-Rec™ RectifieR
VRRM = 1200 V
IF = 20 A
Qc =130 nC
Features
• 1.2kV Schottky Rectier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Swtitching
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Efciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Package
TO-220-2
Maximum Ratings (TC=25°C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1200 V
VRSM Surge Peak Reverse Voltage 1300 V
VRDC Peak Reverse Voltage 1200 V
IF(AVG) Maximum DC Current 27 A TC=135˚C, no AC component
IFRM Repetitive Peak Forward Surge Current 91
61 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM Non-Repetitive Forward Surge Current 130
110 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Ptot Power Dissipation 242
104 WTC=25˚C
TC=110˚C
TCMaximum Case Temperature 135 ˚C
TJ Operating Junction Range -55 to
+175 ˚C
Tstg Storage Temperature Range -55 to
+135 ˚C
TO-220 Mounting Torque 1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
C4D20120A TO-220-2 C4D20120
PIN 1
PIN 2 CASE
2C4D20120A Rev. B
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
2.2
1.8
3VIF = 20 A TJ=25°C
IF = 20 A TJ=175°C
IRReverse Current 35
65
200
400 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QCTotal Capacitive Charge 130 nC
VR = 1200 V, IF = 20A
di/dt = 200 A/μs
TJ = 25°C
C Total Capacitance
1500
93
67
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC
Thermal Resistance from Junction
to Case 0.62 °C/W
Typical Performance
Figure 1. Forward Characteristics
0
5
10
15
20
25
30
35
40
0 1 2 3 4
Figure 2. Reverse Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 500 1000 1500
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
IF (A)
VF (V) VR (V)
IR (mA)
3C4D20120A Rev. B
0
20
40
60
80
100
120
140
0 200 400 600 800 1000 1200
0
20
40
60
80
100
120
140
25
50
75
100
125
150
175
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
10% Duty
30% Duty
50% Duty
70% Duty
DC
0
200
400
600
800
1000
1200
1400
1600
0.1 1 10 100 1000
IF(peak) (A)
TC ˚C
PTot (W)
TC ˚C
C (pF)
VR (V)
Qrr (nC)
VR (V)
4C4D20120A Rev. B
Figure 7. Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celcius
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT+If*RT
VT = 0.97+(TJ* -1.40*10-3)
RT = 0.023+(TJ* 2.71*10-4)
Thermal Resistance (˚C/W)
T (Sec)
55 C4D20120A Rev. B
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Recommended Solder Pad Layout
Part Number Package Marking
C4D20120A TO-220-2 C4D20120
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in
this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an
exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic
equipment (RoHS), as amended through April 21, 2006.”
TO-220-2
A
C
E
D
G
H
B
J
L
M
N
F
P
Q
S
T U
V
W
X
Y
M in M ax M in M ax
A .395 .410 10.033 10.414
B .235 .255 5.969 6.477
C .102 .112 2.591 2.845
D .337 .337 8.560 8.560
E .590 .610 14.986 15.494
F .149 .153 3.785 3.886
G 1.127 1.147 28.626 29.134
H .530 .550 13.462 13.970
J
L .028 .036 .711 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .170 .180 4.318 4.572
Q .048 .054 1.219 1.371
S 3° 5° 3° 5°
T 3° 5° 3° 5°
U 3° 5° 3° 5°
V .100 .110 2.54 2.794
W .014 .021 .356 .533
X 3° 5° 3° 5°
Y .395 .410 10.033 10.414
Z .130 .150 3.302 3.810
Inc h es
M illim et ers
P OS
R 0.010 R 0.254
1 2
Z
Package Dimensions
Package TO-220-2 POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B .235 .255 5.969 6.477
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
E .590 .615 14.986 15.621
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
J R 0.197 R 0.197
L .025 .036 .635 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U 3° 6° 3° 6°
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip
Finish
PIN 1
PIN 2 CASE