BCW65, BCW66
1 Jul-10-2001
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
EAs
EBs
ECs
EFs
EGs
EHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol BCW65 BCW66 Unit
Collector-emitter voltage VCEO 32 45 V
Collector-base voltage VCBO 60 75
Emitter-base voltage VEBO 5 5
DC collector current IC800 mA
Peak collector current ICM 1 A
Base current mA100
IB
Peak base current IBM 200
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance