TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) ID(ON) (min) TO-92 -350V 25 -2.4V -0.4A TP2535N3 -- -- -400V 25 -2.4V -0.4A TP2540N3 TP2540N8 TP2540ND Die TO-243AA* * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA Features TP5D Low threshold -- -2.4V max. Where = 2-week alpha date code High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low Threshold DMOS Technology Low on resistance These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Package Options Analog switches General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* D G D S S G D TO-243AA (SOT-89) -55C to +150C TO-92 300C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2535/TP2540 Thermal Characteristics Package TO-92 ID (continuous)* ID (pulsed) -86mA TO-243AA -125mA Power Dissipation @ TA = 25C jc ja C/W C/W IDR* IDRM -0.6A 0.74W 125 -1.2A 1.6W 170 -86mA -0.6A 78 15 -125mA -1.2A * ID (continuous) is limited by max rated Tj. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage TP2540 -400 TP2535 -350 VGS(th) Gate Threshold Voltage VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ -1.0 -0.2 -0.3 -0.4 -1.1 Max Conditions V VGS = 0V, ID = -2mA -2.4 V VGS = VDS, ID = -1mA 4.8 mV/C VGS = VDS, ID = -1mA -100 nA VGS = 20V, VDS = 0V -10 A VGS = 0V, VDS = Max Rating -1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125C ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source 20 30 ON-State Resistance 19 25 VGS = -4.5V, VDS = -25V A RDS(ON) Change in RDS(ON) with Temperature 0.75 GFS Forward Transconductance CISS Input Capacitance 60 125 COSS Common Source Output Capacitance 20 70 CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 13 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 100 Unit VGS = -10V, VDS = -25V VGS = -4.5V, ID = -100mA VGS = -10V, ID = -100mA %/C VGS = -10V, ID = -100mA Symbol VDS = -25V, ID = -100mA 175 m pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -0.4A RGEN = 25 -1.8 300 V VGS = 0V, ISD = -100mA ns VGS = 0V, ISD = -100mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 TP2535/TP2540 Typical Performance Curves . *' #+% ! 0 (( ( ( 2' # % !)#" % !/ #" % !) #'% !/ #'% .' #& "% !/ ! 0 ( .' #& "% * + ' & , ! !) . .' 0 (. ) . . ( ! & ' 34 # % ) .' #& "% .3 0 . . ( 2' # % 2' # % .3 0 . . ! " # "$ % 2' # % 3 ( -( ! #% ( ( ! " !) ! 0 ( *' 0 1 !/ * ' 0 1 ! 0 ( ( # % TP2535/TP2540 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 100 V GS = -4.5V RDS(ON) (ohms) BVDSS (normalized) 80 1.0 60 40 VGS = -10V 20 0 0.9 -50 0 50 100 150 0 -0.4 -0.8 -1.2 -1.6 -2.0 ID (amperes) Tj ( C) Transfer Characteristics V(th) and RDS Variation with Temperature -2 2.5 1.2 TA = -55C RDS(ON) @ -10V, -0.1A VGS(th) (normalized) ID (amperes) -1.6 -1.2 25C -0.8 2.0 1.1 1.5 1.0 1.0 0.9 V(th) @ -1mA -0.4 125C RDS(ON) (normalized) VDS = - 25V 0.5 0.8 0 0 0 -2 -4 -6 -8 -10 -50 0 50 VGS (volts) 100 150 Tj ( C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 200 f = 1MHz VDS = - 10V -8 VGS (volts) C (picofarads) 150 100 -6 VDS = - 40V -4 190 pF CISS 50 -2 60pF COSS CRSS 0 0 0 -10 -20 -30 -40 0 0.4 0.8 1.2 1.6 2.0 QG (nanocoulombs) VDS (volts) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com