Mar. 2002
6.5
5.0±0.2
2.3 2.3
0.9 MAX 1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
2
23
4
1
3
4
1
1
2
3
4
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
T
2
TERMINAL
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
BCR5AS
•IT (RMS) ........................................................................5A
•V
DRM ....................................................................... 600V
•I
FGT !, IRGT !, IRGT #............................................30mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
0.26
✽1.Gate open.
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=7A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured on the T2 terminal.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
5
Max.
2.0
1.8
1.5
1.5
1.5
30
30
30
—
3.0
—
PERFORMANCE CURVES
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–2.5A/ms
3. Peak off-state voltage
VD=400V
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
4.60.6 1.4 2.2 3.0 3.8
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
T
j
= 125°C
T
j
= 25°C
10023 5710
1
40
20
23 5710
2
44
60
80
100
30
10
50
70
90
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
2310
–1
5710
0
23 5710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGD = 0.2V
PGM = 3W
VGM = 10V
VGT = 1.5V IGM = 2A
PGM =
0.3W
IFGT I
IRGT I
IRGT III
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
IFGT I
IRGT I
IRGT III
8
6
5
3
1
080 1357
2
4
7
246
160
120
100
60
20
080 1357
40
80
140
246
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
TYPICAL EXAMPLE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360° CONDUCTION
RESISTIVE,
INDUCTIVE LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
080 1357
40
80
140
246
80 80 t2.3
170 170 t2.3
140 140 t2.3
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
10
2
7
5
3
2
–60 –20 20
10
1
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
0
140–60 –20 20 60 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40 0 40 80 120
VD = 12V
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE
INDUCTIVE,
LOADS
NATURAL
CONVECTION
ALL FINS ARE ALUMINUM NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
T
2
+
, G
–
TYPICAL
EXAMPLE
T
2
+
, G
+
T
2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
4
4
44
10
0
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE 6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
Mar. 2002
6.5
5.0±0.2
2.3 2.3
0.9 MAX 1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
2
23
4
1
3
4
1
1
2
3
4
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
T
2
TERMINAL
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
BCR5AS
•IT (RMS) ........................................................................5A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT #............................................30mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=128°C✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +150
–40 ~ +150
0.26
✽1.Gate open.
The product guaranteed maximum junction
temperature 150°C (See warning.)
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=150°C, VDRM applied
Tc=25°C, ITM=7A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°/150°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured on the T2 terminal.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
5/1
Max.
2.0
1.8
1.5
1.5
1.5
30
30
30
—
3.0
—
PERFORMANCE CURVES
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–2.5A/ms
3. Peak off-state voltage
VD=400V
The product guaranteed maximum junction
temperature 150°C (See warning.)
10
0
23 5710
1
40
20
23 5710
2
44
60
80
100
30
10
50
70
90
0
0.5 1.5 2.5 3.51.0 2.0 3.0 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Tj = 25°C
Tj = 150°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
10
0
10
2
5
10
1
5
7
2
3
7
2
3
10
3
5
7
2
3
–60 –20 20 60 100 160140–40 0 40 80 120
IFGT I
IRGT I
IRGT III
8
6
5
3
1
080 1357
2
4
7
246
10
0
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
2310
1
5710
2
23 5710
3
23 5710
4
VGD = 0.1V
PGM = 3W
VGM = 10V
VGT = 1.5V IGM = 2A
PGM =
0.3W
IFGT I
IRGT I
IRGT III
2310
–1
5710
0
23 5710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
160
120
100
60
20
080 1357
40
80
140
246
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION
ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
102
7
5
3
2
101
7
5
3
2
4
4
100
–60 –20 20 60 100 140160–40 0 40 80 120
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
100
–60 –20 20 60 100 160140–40 0 40 80 120
103
7
5
3
2
102
104
7
5
3
2
105
7
5
3
2
106
7
5
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
160
120
100
60
20
080 1357
40
80
140
246
80 80 t2.3
170 170 t2.3
140 140 t2.3
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–40 0 40 80 120
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE
INDUCTIVE,
LOADS
NATURAL
CONVECTION
ALL FINS ARE ALUMINUM
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
T2
+
, G
–
TYPICAL
EXAMPLE
T2
+
, G
+
T2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
NATURAL CONVECTION
NO FINS, CURVES
APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
V
D
= 12V
RMS ON-STATE CURRENT (A)
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
7
5
3
2
10
0
23 5710
1
10
2
10
1
7
7
5
3
2
23 57
10
0
7
5
3
2
10
0
23 5710
1
10
2
10
1
7
7
5
3
2
23 57
10
0
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 150°C
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/
µ
s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
C
1
C
1
= 0.1~0.47µF
R
1
= 47~100ΩC
0
= 0.1µF
R
0
= 100Ω
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS