THERMAL DATA
Rthj-case Thermal Resistance Junction-case 1.78 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current
(IE = 0) for BDX33B/34B VCB = 80 V
for BDX33C/34C VCB = 100V
Tcase = 100 oC
for BDX33B/34B VCB = 80 V
for BDX33C/34C VCB = 100 V
0.2
0.2
5
5
mA
mA
mA
mA
ICEO Collector Cut-off Current
(IB = 0) for BDX33B/34B VCE = 40 V
for BDX33C/34C VCE = 50V
Tcase = 100 oC
for BDX33B/34B VCE = 40 V
for BDX33C/34C VCE = 50 V
0.5
0.5
10
10
mA
mA
mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V
5mA
V
CEO(sus)∗Collector-Emitter Sustaining
Voltage (IB = 0) IC =100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCER(sus)∗Collector-emitter Sustaining
Voltage (RBE =100 Ω)IC = 100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCEV(sus)∗Collector-emitter Sustaining
Voltage (VBE =-1.5 V) IC = 100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCE(sat)∗Collector-emitter Saturation
Voltage IC = 3 A IB = 6 mA 2.5 V
VBE∗Base-emitter Voltage IC = 3 A VCE = 3 V 2.5 V
hFE∗DC Current Gain IC = 3 A VCE = 3 V 750 V
VF∗Parallel-Diode Forward
Voltage IF = 8 A 4 V
hfe Small Signal Current Gain IC = 1 A VCE = 5 V f = 1M Hz 100
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDX33B BDX33C BDX34B BDX34C
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