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FGAF40N60UF — 600 V PT IGBT
November 2013
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
FGAF40N60UF
600 V PT IGBT
General Description
Fairchild's UF series of IGBTs provide low conduction and
switching losses. The UF series is designed for applications
such as general inverters and PFC where high speed
switching is a required feature.
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A
• High Input Impedance
Absolute Maximum Ratings TC = 25C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage 20 V
IC
Collector Current @ TC = 25C40 A
Collector Current @ TC = 100C20 A
ICM (1) Pulsed Collector Current 160 A
PDMaximum Power Dissipation @ TC = 25C 100 W
Maximum Power Dissipation @ TC = 100C40 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 C
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 1.2 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W
Applications
General Inverter, PFC
GCE
TO-3PF
G
C
E
G
C
E
FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characterist ic s
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 1 mA -- 0.6 -- V/C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 20 mA, VCE = VGE 3.5 5.1 6.5 V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 20 A, VGE = 15 V -- 2.3 3.0 V
IC = 40 A, VGE = 15 V -- 3.1 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
-- 1075 -- pF
Coes Output Capacitance -- 170 -- pF
Cres Reverse Transfer Capacitance -- 50 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
-- 15 -- ns
trRise Time -- 30 -- ns
td(off) Turn-Off Delay Time -- 65 130 ns
tfFall Time -- 35 100 ns
Eon Turn-On Switching Loss -- 470 -- uJ
Eoff Turn-Off Switching Loss -- 130 -- uJ
Ets Total Switching Loss -- 600 1000 uJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
-- 30 -- ns
trRise Time -- 37 -- ns
td(off) Turn-Off Delay Time -- 110 200 ns
tfFall Time -- 80 250 ns
Eon Turn-On Switching Loss -- 500 -- uJ
Eoff Turn-Off Switching Loss -- 310 -- uJ
Ets Total Switching Loss -- 810 1200 uJ
QgTotal Gate Charge VCE = 300 V, IC = 20 A,
VGE = 15 V
-- 77 150 nC
Qge Gate-Emitter Charge -- 20 30 nC
Qgc Gate-Collector Charge -- 25 40 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
0.1 1 10 100 1000
0
5
10
15
20
25
30
Vcc = 300V
Load Current : peak of square wave
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 24W
Load Current [A]
Frequency [kHz]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
Characteristics
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
02468
0
40
80
120
160
12V
15V
20V
VGE = 10V
Common Emitter
Tc = 25℃
Collector Current, Ic (A)
Collector-Emitter Voltage,VCE(V)
110
0
10
20
30
40
50
60
70
80
0.5
Common Emitter
VGE=15V
Tc= 25
℃
Tc= 125 ℃
Collector Current , Ic (A)
Collector-Emitter Voltage, VCE(V)
0306090120150
0
1
2
3
4
20A
Ic=10A
40A
Common Emitter
Vge=15V
Case Temperature, TC []℃
Collector - Emitter Voltage, V CE [V]
048121620
0
4
8
12
16
20
40A
20A
IC = 10A
Common Emitter
TC = 25℃
Gate - Emitter Voltage, VGE [V]
Collector - Emitter Voltage, V CE [V]
0 4 8 121620
0
4
8
12
16
20
20A
40A
Ic=10A
Common Emitter
TC = 125℃
Collector - Emitter Voltage, V CE [V]
Gate - Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Re sistance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
500
1000
1500
2000
2500
3000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
30
Cres
Coes
Cies
Capacitance (pF)
Collector-Emitter Voltage, VCE (V)
110100
100
1000
20
200
Tf
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25
℃
Tc = 125
℃Toff
Tf
Switching Time (ns)
Gate Resistance, RG( Ω)
1 10 100
100
1000
2000
50
200
Eon
Eoff
Common Emitter
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25
℃
Tc = 125 ℃
Switching Time (uJ)
Gate Resistance, RG( Ω)
10 15 20 25 30 35 40
10
100
200
Tr
Ton
Collector Current, Ic (A)
Switching Time (ns)
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10
TC = 25 ℃
TC = 125 ℃
10 15 20 25 30 35 40
100
1000
20
Tf
Toff
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10
TC = 25 ℃
TC = 125 ℃
Collector Current, IC [A]
Switching Time [nS]
Toff
Tf
1 10 100
10
100
200
300
Ton
Tr
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25 ℃
Tc = 125 - - - -℃
Switching Time (ns)
Gate Resistance, RG( Ω)
FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
1 10 100 1000
0.1
1
10
100
500
Safe Operating Area
VGE=20V, TC=100oC
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics Fig 16. Tu rn-Off SOA Characteristi c s
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
10 15 20 25 30 35 40
10
100
1000
3000
Eoff
Switching Time (uJ)
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
RG
= 10
TC = 25 ℃
TC = 125 ℃
Collector Current , Ic (A)
0 30 60 90 120
0
3
6
9
12
15
200V
300V
Vcc=100V
Common Emitter
RL=15 Ω
(Tc=25 )
℃
Gate-Emitter Voltage, VGE (V)
Gate Charge, Qg (nC)
1 10 100 1000
0.1
1
10
100
50s
100s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, VCE [V]
FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
Mechanical Dimensions
Figure 18. TO3PF,MOLDED,3LD,FULLPACK (AG)
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FGAF40N60UF — 600 V PT IGBT
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FGAF40N60UF Rev. C1
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