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MDS6847 REV. NEW PAGE 2
For Footnotes refer to the last page
SCF2N6847T2
Electrical Characteristics @ TJ 25°C (unless otherwise specific)
PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
BVDSS Drain to Source Breakdown
Voltage -200 - - V VGS = 0 V, ID = -1.0 mA
ΔBVDSS/ΔTJ Temperature Coecient of
Breakdown Voltage - -0.22 - V/°C Reference to 25 °C, ID = -1.0mA
RDS(ON) Stac Drain to Source On-State
Resistance
- - 0.150
Ω
VGS = -10 V, ID = -1.6 A (4)
- - 0.152 VGS = -10 V, ID = -2.5 A (4)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250 µA
gfs Forward Transconductance 1.0 - - S(Ʊ) VDS ≥ 15 V, IDS = -1.6 A (4)
IDSS Zero Gate Voltage Drain Current
- - 25
µA
VDS = -160 V, VGS = 0V
- - 250 VDS = -160 V, VGS = 0V, Tj = 125 °C
IGSSF Gate to Source Leakage Forward -100 nA VGS = -20 V
IGSSR Gate to Source Leakage Reverse 100 nA VGS = 20 V
Qg Total Gate Charge - - 15
nC VGS = 10 V, ID = -2.5 A , VDS = -100 V Qgs Gate to Source Charge - - 3.2
Qgd Gate to Drain (Miller) Charge - - 8.4
Td(on) Turn On Delay Time - - 50
ns VDD = -100 V, ID = -2.5 A, RG = 7.5 Ω
Tr Rise Time - - 70
Td(o) Turn O Delay Time - - 40
Tf Fall me - - 50
CISS Input Capacitance - - -
pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz
COSS Output Capacitance - - -
CRSS Reverse Transfer Capacitance - - -
Source-Drain Diode Rating and Characteristics
PARMETER MIN TYP MAX UNITS TEST CONDITIONS
IS Connuous Source Current (Body Diode) - - -2.5 A
ISM Pulse Source Current (Body Diode) - - -10 A
VSD Diode Forward Voltage - - -4.8 V Ti = 25 °C, IF = -2.5 A, VGS = 0 V (4)
Trr Reverse Recovery Time - - 300 ns Ti = 25 °C, IF = -2.5 A, di/dt < 100 A/
µS, VDD ≤ 50 V (4)