Ordering number:ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions AE Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm 2045B [2SB1203/2SD1803] 2.3 5.5 AE Low collector-to-emitter saturation voltage. AE High current and high fT. AE Excellent linearity of hFE. AE Fast switching speed. AE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 3 2.3 2.3 unit:mm 2044B [2SB1203/2SD1803] 6.5 5.0 4 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 2.3 3 1.2 0 to 0.2 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085--1/5 2SB1203/2SD1803 ( ) : 2SB1203 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)50 V Emitter-to-Base Voltage VEBO IC (-)6 V (-)5 A ICP (-)8 A 1 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 20 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 hFE2 VCE=(-)2V, IC=(-)4A fT VCE=(-)5V, IC=(-)1A Cob VCB=(-)10V, f=1MHz Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)0.5A VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time max Unit (-)1 A (-)1 A 400* 35 (130) MHz 180 MHz (60)40 IC=(-)3A, IB=(-)0.15A V(BR)EBO ton typ 70* VBE(sat) IC=(-)3A, IB=(-)0.15A V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Collector-to-Base Breakdown Voltage Ratings min 400 mV (-280) (-550) mV (-)0.95 (-)1.3 (-)60 IE=(-)10A, IC=0 See specified Test Circuit tstg See specified Test Circuit tf See specified Test Circuit pF 220 V V (-)50 V (-)6 V 50(50) ns (450) ns 500 ns (20)20 ns * : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB RL 50 + 100F VBE= --5V + 470F VCC=25V IC=10IB1= --10IB2=2A (For PNP, the polarity is reversed.) No.2085--2/5 2SB1203/2SD1803 IC -- VCE --4 --3 IC -- VCE 5 2SB1203 From top --100mA --90mA --80mA --70mA --60mA A --50m A --40m --30mA --20mA --2 --10mA Collector Current, IC -- A Collector Current, IC -- A --5 2SD1803 From top 50mA 45mA 40mA 35mA 30mA 4 3 25mA 20mA 15mA 2 10mA 5mA 1 --1 IB=0 0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09180 IC -- VCE --5 IB=0 0 --2.0 IC -- VCE 5 2SB1203 ITR09181 2SD1803 A --30m --25mA --20mA --4 --3 Collector Current, IC -- A Collector Current, IC -- A 30mA --15mA --10mA --2 --5mA 4 25mA 20mA 3 15mA 2 10mA 5mA 1 --1 IB=0 0 0 --2 --4 --6 --8 Collector-to-Emitter Voltage, VCE -- V 0 2 4 6 8 2SD1803 VCE=2V --3 --2 --1 4 3 2 5C 25 C --25 C --4 Ta= 7 Collector Current, IC -- A 5 Ta= 75 25C C --25 C Collector Current, IC -- A --5 ITR09183 IC -- VBE 6 2SB1203 VCE= --2V 1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 5 2 100 7 5 0.6 0.8 1.0 1.2 ITR09185 hFE -- IC 2SD1803 VCE=2V 7 5 DC Current Gain, hFE Ta=75C 25C --25C 3 0.4 1000 2SB1203 VCE= --2V 7 0.2 Base-to-Emitter Voltage, VBE -- V ITR09184 hFE -- IC 1000 DC Current Gain, hFE 10 Collector-to-Emitter Voltage, VCE -- V ITR09182 IC -- VBE --6 IB=0 0 --10 3 Ta=75C 25C --25C 2 100 7 5 3 3 2 2 10 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09186 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09187 No.2085--3/5 2SB1203/2SD1803 f T -- IC 2SB1203 VCE= --5V Gain-Bandwidth Product, fT -- MHz 7 5 3 2 100 7 5 3 2 5 3 2 100 7 5 3 2 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 ITR09188 Collector Current, IC -- A 100 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ITR09189 Cob -- VCB 5 2SD1803 f=1MHz 3 Output Capacitance, Cob -- pF 2 3 Collector Current, IC -- A 2SB1203 f=1MHz 3 Output Capacitance, Cob -- pF 2 Cob -- VCB 5 2 100 7 5 3 2 10 10 5 7 --1.0 2 3 5 7 2 --10 3 5 7 --100 ITR09190 Collector-to-Base Voltage, VCB -- V 5 3 2 --1000 7 5 3 2 C 25 --100 7 5 5C 7 Ta= 3 --25 C 2 2 1.0 3 5 7 2 10 3 5 7 100 ITR09191 VCE(sat) -- IC 5 2SD1803 IC / IB=20 3 Collector-to-Emitter Saturation Voltage, VCE (sat) -- mV 2SB1203 IC / IB=20 7 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE (sat) -- mV 2SD1803 VCE=5V 7 10 2 1000 7 5 3 2 100 7 5 --10 25 C C Ta=75 C --25 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 0.01 5 7 --10 ITR09192 3 2 Ta= --25C 25C 7 75C 5 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ITR09193 VBE(sat) -- IC 2SD1667 2SD1803 IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE (sat) -- V 5 --1.0 3 10 2SB1203 IC / IB=20 7 2 Collector Current, IC -- A VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) -- V f T -- IC 1000 Gain-Bandwidth Product, fT -- MHz 1000 5 3 2 1.0 Ta= --25C 7 25C 75C 5 3 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09194 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR09195 No.2085--4/5 2SB1203/2SD1803 ASO ICP=8A IC=5A 100ms 3 2 op era era op DC 1.0 7 5 DC tio nT a= C C 0.1 7 5 3 2 25 c= 25 3 2 nT tio Collector Current, IC -- A 10 7 5 2SB1203 / 2SD1803 1m 10 s ms Tc=25C Single pulse For PNP, minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 PC -- Ta 24 Collector Dissipation, PC -- W 2 2SB1203 / 2SD1803 20 16 12 8 4 No heat sink 1 0 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09196 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 ITR09197 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. PS No.2085--5/5