TISP3260F3DR-S - Bourns - Datasheet.Live

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

TISP3240F3, TISP3260F3,

TISP3290F3,TISP3320F3,TISP3380F3

HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR

OVERVOLTAGE PROTECTORS

D Package (Top View)

Description

These high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and

customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in five voltage variants to

meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in

both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the

device to switch. The high crowbar holding current helps prevent d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control

and are virtually transparent to the system in normal operation.

How To Order

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Planar Passivated Junctions

Low Off-State Current <10 µA

Rated for International Surge Wave Shapes

NC - No internal connection

Device Symbol

SD3XAA

Terminals T, R and G correspond to the

alternative line designators of A, B and C

DEVICE VDRM

V(BO)

‘3240F3 180 240

‘3260F3 200 260

‘3290F3 220 290

‘3320F3 240 320

‘3380F3 270 380

Waveshape Standard ITSP

2/10 µs GR-1089-CORE 175

8/20 µs IEC 61000-4-5 120

10/160 µs FCC Part 68 60

10/700 µsITU-T K.20/21

FCC Part 68 50

10/560 µs FCC Part 68 45

10/1000 µs GR-1089-CORE 35

.......................................UL Recognized Component

*RoHS COMPLIANT

Device Package Carrier

TISP3xxxF3 D, Small-outline Tape And Reeled TISP3xxxF3DR-S

Insert xxx value corresponding to protection voltages of 240 through 380

Order As

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Absolute Maximum Ratings, TA= 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

Repetitive peak off-state voltage, 0 °C < TA < 70 °C

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

VDRM

±180

±200

±220

±240

±270

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

IPPSM A

1/2 (Gas tube differential transient, 1/2 voltage wave shape) 350

2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 175

1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 90

8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120

10/160 (FCC Part 68, 10/160 voltage wave shape) 60

4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 55

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38

5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50

5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50

10/560 (FCC Part 68, 10/560 voltage wave shape) 45

10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35

Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3)

50 Hz, 1 s ITSM 4.3 A

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs

Junction temperature TJ-65 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially, the TISP® device must be in thermal equilibrium with 0 °C < TJ<70 °C. The surge may be repeated after the TISP® device

returns to its initial conditions.

3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

Electrical Characteristics for R and T Terminal Pair, TA= 25 °C (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

IDRM Repetitive peak off-

state current VD=±2VDRM, 0 °C<T

A<70°C±10 µA

IDOff-state current VD=±50 V ±10 µA

Coff Off-state capacitance

f = 100 kHz, Vd= 100 mV , VD=0,

Third terminal voltage = -50 V to +50 V

(see Notes 4 and 5)

0.05 0.15 pF

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Electrical Characteristics for T and G or R and G Terminals, TA= 25 °C (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

IDRM Repetitive peak off-

state current VD=±VDRM, 0 °C<T

A<70°C±10 µA

V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

±240

±260

±290

±320

±380

V(BO) Impulse breakover

voltage

dv/dt ≤±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

RSOURCE =50Ω

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

±267

±287

±317

±347

±407

I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω±0.1 ±0.6 A

VTOn-state voltage IT=±5A, t

W= 100 µs±3V

IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs

IDOff-state current VD=±50 V ±10 µA

Coff Off-state capacitance

f=1MHz, V

d=0.1V r.m.s., V

D=0

f=1MHz, V

d=0.1V r.m.s., V

D=-5V

f=1MHz, V

d=0.1V r.m.s., V

D=-50V

(see Notes 5 and 6)

20 pF

NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

Thermal Characteristics

Parameter Test Conditions Min Typ Max Unit

RθJA Junction to free air thermal resistance Ptot =0.8W, T

A= 25 °C

5cm

2, FR4 PCB 160 °C/W

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Parameter Measurement Information

Figure 1. Voltage-Current Characteristics for any Terminal Pair

-v

I(BR)

V(BR)

V(BR)M

VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

I(BR)

V(BR)

V(BR)M

VDRM

IDRM

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAA

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Typical Characteristics - R and G or T and G Terminals

Figure 2. Figure 3.

Figure 4. Figure 5.

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

0.1

0.01

0.001

100 TC3HAF

VD = -50 V

VD = 50 V

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAI

V(BO)

V(BR)

V(BR)M

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAJ

V(BO)

V(BR)

V(BR)M

VT - On-State Voltage - V

23456789110

IT - On-State Current - A

100 TC3HAL

-40 °C

150 °C 25 °C

OFF-STATE CURRENT

JUNCTION TEMPERATURE

OFF-STATE CURRENT

ON-STATE VOLTAGE

NORMALIZED BREAKDOWN VOLTAGES

JUNCTION TEMPERATURE

NORMALIZED BREAKDOWN VOLTAGES

JUNCTION TEMPERATURE

Positive Polarity

Normalized to V(BR)

I(BR) = 100 µA and 25 °C

Negative Polarity

Normalized to V(BR)

I(BR) = 100 µA and 25 °C

TISP3xxxF3 (HV) Overvoltage Protector Series

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Typical Characteristics - R and G or T and G Terminals

Figure 6. Figure 7.

Figure 8. Figure 9.

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

IH, I(BO) - Holding Current, Breakover Current - A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

1.0 TC3HAH

I(BO)

di/dt - Rate of Rise of Principle Current - A/ s

0·001 0·01 0·1 1 10 100

Normalized Breakover Voltage

1.0

1.1

1.2

1.3 TC3HAB

Positive

Negative

Terminal Voltage - V

0·1 1 10

Off-State Capacitance - pF

100 TC3HAE

Positive Bias

Negative Bias

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Off-State Capacitance - pF

100

TC3HAD

500

Terminal Bias = 0

Terminal Bias = 50 V

Terminal Bias = -50 V

HOLDING CURRENT & BREAKDOWN CURRENT

JUNCTION TEMPERATURE

OFF-STATE CAPACITANCE

JUNCTION TEMPERATURE

NORMALIZED BREAKOVER VOLTAGES

JUNCTION TEMPERATURE

OFF-STATE CAPACITANCE

TERMINAL VOLTAGE

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Typical Characteristics - R and G or T and G Terminals

Figure 10.

Decay Time - s

10 100 1000

Maximum Surge Current - A

100

1000 TC3HAA

SURGE CURRENT

DECAY TIME

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Typical Characteristics - R and T Terminals

Figure 11. Figure 12.

Figure 13.

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

ID - Off-State Current - µA

0·001

0·01

0·1

100 TC3HAG

VD = ±50 V

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Breakdown Voltages

0.9

1.0

1.1

1.2

TC3HAK

V(BO)

V(BR)

V(BR)M

Both Polarities

Normalized to V(BR)

I(BR) = 100 µA and 25 °C

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalized Breakover Voltage

1.0

1.1

1.2

1.3 TC3HAC

OFF-STATE CURRENT

JUNCTION TEMPERATURE

NORMALIZED BREAKDOWN VOLTAGES

JUNCTION TEMPERATURE

NORMALIZED BREAKOVER VOLTAGES

RATE OF RISE OF PRINCIPLE CURRENT

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Thermal Information

Figure 14. Figure 15.

t - Current Duration - s

0 1

.1 10 100 1000

ITRMS - Maximum Non-Recurrent 50 Hz Current - A

TI3HAA

VGEN = 350 Vrms

RGEN = 20 to 250

t - Power Pulse Duration - s

0·0001 0·001 0·01 0·1 1 10 100 1000

ZθJA - Transient Thermal Impedance - °C/W

100

TI3MAA

MAXIMUM NON-RECURRING 50 Hz CURRENT

CURRENT DURATION THERMAL RESPONSE

Ω

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

APPLICATIONS INFORMATION

Electrical Characteristics

The electrical characteristics of a TISP®device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will

depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial

testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters’

temperature coefficient, the power dissipated and the thermal response curve, Zθ(see M. J. Maytum, “Transient Suppressor Dynamic

Parameters.” TI Technical Journal, vol. 6, No. 4, pp. 63-70, July-August 1989).

Lightning Surge

Wave Shape Notation

Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an

exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of

the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 µs wave shape would

have a peak current value of 50 A, a rise time of 5 µs and a decay time of 310 µs. The TISP®surge current graph comprehends the

wave shapes of commonly used surges.

Generators

There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape

generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit

voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the

short circuit current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to

a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage

generator typically produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resis-

tance, the wave shape produced is intermediate between the open circuit and short circuit values.

Current Rating

When the TISP®device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be

defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP®surge capability.

As an example, the ITU-T K.21 1.5 kV, 10/700 µs open circuit voltage surge is changed to a 38 A, 5/310 µs current waveshape when

driving into a short circuit. Thus, the TISP®surge current capability, when directly connected to the generator, will be found for the

ITU-T K.21 waveform at 310 µs on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:

Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value.

A 1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 Ω(1000/100). If the

equipment has a series resistance of 25 Ω, then the surge current requirement of the TISP®device becomes 29 A (1000/35) and not

100 A.

Standard Open Circuit Voltage Short Circuit Current

ITU-T K.21 1.5 kV, 10/700 µs 37.5 A, 5/310 µs

ITU-T K.20 1 kV, 10/700 µs 25 A, 5/310 µs

IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 µs 500 A, 8/20 µs

Telcordia GR-1089-CORE 1.0 kV, 10/1000 µs 100 A, 10/1000 µs

Telcordia GR-1089-CORE 2.5 kV, 2/10 µs 500 A, 2/10 µs

FCC Part 68, Type A 1.5 kV, <10/>160 µs 200 A,<10/>160 µs

FCC Part 68, Type A 800 V, <10/>560 µs 100 A,<10/>160 µs

FCC Part 68, Type B 1.5 kV, 9/720 µs 37.5 A, 5/320 µs

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

APPLICATIONS INFORMATION

Protection Voltage

The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on

the rate of current rise, di/dt, when the TISP®device is clamping the voltage in its breakdown region. The V(BO) value under surge

conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure

7 ). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt

is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional

series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In

practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the

TISP®breakdown region.

Capacitance

Off-state Capacitance

The off-state capacitance of a TISP®device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage,

VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C

variation of capacitance value with a.c. bias is shown in Figure 17. When VD>> Vd, the capacitance value is independent on the value of

Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies.

Figure 16.

Vd - RMS AC Test Voltage - mV

1 10 100 1000

Normalized Capacitance

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05 AIXXAA

Normalized to Vd = 100 mV

DC Bias, VD = 0

NORMALIZED CAPACITANCE

RMS AC TEST VOLTAGE

MARCH 1994 - REVISED SEPTEMBER 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

APPLICATIONS INFORMATION

Longitudinal Balance

Figure 17 shows a three terminal TISP®device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true

terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than

wire T, then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG).

The line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2.

All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive

unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via

the third terminal is included.

Figure 17.

CTG

CRG

CTR

Equipment

(CTG-CRG)

CRG

CTR

Equipment

CRG

CTG > CRG Equivalent Unbalance

AIXXAB

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

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TISP3290F3DR-S TISP3320F3P-S TISP3240F3P-S TISP3260F3P-S