For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 16
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
General Description
Features
Functional Diagram
The HMC383LC4 is a general purpose GaAs PHEMT
MMIC Driver Ampli er housed in a leadless RoHS
compliant SMT package. The ampli er provides 15 dB
of gain and +18 dBm of saturated power from a single
+5V supply. Consistent gain and output power across
the operating band make it possible to use a com-
mon driver/LO ampli er approach in multiple radio
bands. The RF I/Os are DC blocked and matched to
50 Ohms for ease of use. The HMC383LC4 is housed
in a RoHS compliant leadless 4x4 mm package allow-
ing the use of surface mount manufacturing tech-
niques.
Gain: 15 dB
Saturated Output Power: +18 dBm
Output IP3: +25 dBm
Single Positive Supply: +5V @ 100 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm Package
Electrical Speci cations, TA = +25° C, Vdd = +5V
Typical Applications
The HMC383LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• LO Driver for HMC Mixers
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 12 - 16 16 -24 24 - 28 28 - 30 GHz
Gain 12 15 13 16 12 15 10 13 dB
Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.02 0.03 0.02 0.03 dB/ °C
Input Return Loss 14 14 11 13 dB
Output Return Loss 14 17 10 8 dB
Output Power for 1 dB Compression
(P1dB) 12 15 13.5 16.5 13 16 12 15 dBm
Saturated Output Power (Psat) 17 18 17 16 dBm
Output Third Order Intercept (IP3) 24 25 25 23 dBm
Noise Figure 10.5 8 7.5 8 dB
Supply Current (Idd) 75 100 135 75 100 135 75 100 135 75 100 135 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-20
-10
0
10
20
8 121620242832
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 18
Power Compression @ 18 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage @ 18 GHz Reverse Isolation vs. Temperature
Power Compression @ 30 GHz
0
2
4
6
8
10
12
14
16
18
20
-16-14-12-10-8-6-4-202468
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
14
18
22
26
30
12 15 18 21 24 27 30
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
12 14 16 18 20 22 24 26 28 30
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
14
15
16
17
18
19
4.5 5 5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd Supply Voltage (Vdc)
0
2
4
6
8
10
12
14
16
18
20
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 19
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C) 0.92 W
Thermal Resistance
(channel to ground paddle) 98 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
+4.5 99
+5.0 100
+5.5 101
Typical Supply Current vs. Vdd
Note: Ampli er will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. ALL DIMENSIONS ARE IN INCHES [MM]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 20
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4-15, 17,
18, 20-24 N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance if using
grounded coplanar wave guide transmission lines.
3RFIN This pad is AC coupled and
matched to 50 Ohms.
16 RFOUT This pad is AC coupled and
matched to 50 Ohms.
19 Vdd Power Supply Voltage for the ampli er. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 μF are required.
GND
Package base has an exposed metal ground
that must be connected to RF/DC ground.
Vias under the device are required
Application Circuit
Component Value
C1 100 pF
C2 1,000 pF
C3 2.2 μF
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 21
Evaluation PCB
Item Description
J1, J2 2.92 mm PCB mount K-connector
J3, J4 DC Pin
C1 100 pF capacitor, 0402 pkg.
C2 1,000 pF Capacitor, 0603 pkg.
C3 2.2μF Capacitor, Tantalum
U1 HMC383LC4 Ampli er
PCB [2] 108535 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 122198 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC383LC4
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
v04.1208
