Features
Center gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 110 A
@ TC90 °C
IT(RMS) 175 A
ITSM @ 50Hz 2700 A
@ 60Hz 2830 A
I2t@
50Hz 36.4 KA2s
@ 60Hz 33.2 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST110S Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
110A
PHASE CONTROL THYRIST ORS Stud Version
ST110S SERIES
Bulletin I25167/B
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ST110S Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
ST110S 12 1200 1300 20
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C
IT(RMS) Max. RMS on-state current 175 A DC @ 85°C case temperature
ITSM Max. peak, one-cycle 2700 t = 10ms No voltage
non-repetitive surge current 2830 t = 8.3ms reapplied
2270 t = 10m s 100% VRRM
2380 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.
33.2 t = 8.3ms reapplied
25.8 t = 10ms 100% VRRM
23.5 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 364 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.52 V Ipk= 350A, TJ = T J max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.90 (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
1.79 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.81 (I > π x IT(AV)),TJ = TJ max.
Parameter ST110S Units Conditions
0.92 (I > π x IT(AV)),TJ = T J max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ ma x, anode voltage ≤ 80% VDRM
Gate current 1A, d i g/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 100A, T J = TJ max, di/dt = 10A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST110S Units Conditions
tdTypical delay time 2 .0
Switching
tqTypical turn-off time 100 µs
500 A/µs
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ST110S Series
dv/dt Maximum critical rate of rise of off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST110S Units Conditions
20 mA TJ = TJ max, rated V DRM/VRRM applied
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 15.5 Non lubricated threads
(137)
14 Lubricated threads
(120)
wt Approximate weight 130 g
Parameter ST110S Units Conditions
0.195 DC operation
0.08 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
PGM Maximum peak gate power 5 TJ = TJ max, t p ≤ 5ms
PG(AV) Maximum average gate power 1 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 2. 0 A TJ = TJ max, t p ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA TJ = 25°C
TJ = 125°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST110S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
°C
K/W
Nm
(lbf-in)
Case style TO - 209AC (TO-94) See Outline Table
VT
J
= TJ max, tp ≤ 5ms
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ST110S Series
Ordering Information Table
5
3 4
ST 11 0 S 16 P 0 V
7
689
∆R
thJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Device Code
12
180° 0.035 0.025 TJ = TJ max.
120° 0.041 0.042
90° 0.052 0.056 K/W
60° 0.076 0.079
30° 0.126 0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 20UNF threads
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
9- Critical dv/dt: None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
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ST110S Series
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Outline Table
C.S. 0.4 mm2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 (0.49) MAX.
157 (6.18)
170 (6.69)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MAX.
70 (2. 75) M IN.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
29 (1.14) MAX.
SW 27
C.S. 16mm2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20 (0.79) MIN.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.5 (0.37) MIN.
WHITE GATE
215 (8.46)
C.S. 0.4 mm2
215 (8.46) 10 (0.39)
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 ( 0.49 ) MA X.
157 (6.18)
170 (6.69)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.33) DIA.
16.5 (0.65) MAX.
23.5 (0.93) MAX. DIA.
MAX.
29 ( 1.1 4) MAX.
70 (2.75) MIN.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
20 (0.79) MIN.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
WHITE GATE
AMP. 280000-1
REF-250
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ST110S Series
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
Outline Table
10
1/2"-20UNF-2A
29.5 (1.16)
MAX.
MAX.
46 (1.81)
10
7.5
(0.30)
22.5 DIA.
16.5
(0.65)
12.5 (0.49)
5.2 (0.20) DIA.
29 (1.14)
(0.39)
(0.89) MAX.
21(0.83)
1.5 (0.06) DIA.
(0.39)
49 (1.93)
MAX.
CERAMIC HOUSING
FLAG TERMINALS
SW 27
2.4 (0.09)
10
1/2"-20UNF-2A
29.5 (1.16)
MAX.
46 (1.81)
23.5 DIA.
16.5
(0.65)
12.5 (0.49)
29 (1.14) MAX.
(0.93) MAX.
21(0.83)
1.5 (0.06) DIA.
(0.39)
49 (1.93)
MAX.
GLASS-METAL SEAL
FLAG TERMINALS
SW 27
2.4 (0.09)
10
7.5
(0.30)
5.2 (0.20) DIA.
(0.39)
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ST110S Series
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 20406080100120
M aximum Allowabl e Case Temper atu re (°C)
30° 60° 90° 120° 180°
Average O n- state Current (A)
Conduction An gle
ST110S Se rie s
R (DC) = 0 .1 95 K/W
thJC
Fig. 1 - Current Ratings Characteristics
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30°
60°
90°120° 180°
Average O n-state C urre n t ( A)
Maximu m Allowable Ca se Temperatu re (°C )
Conduction Per i od
ST110S Serie s
R (D C) = 1.95 K/W
thJC
25 50 75 100 125
Maximum Allow able A mbie nt Temperature (°C)
R
= 0.1 K/W - Delta R
thS
A
0.2 K
/W
0.3 K/W
0.4 K/W
0.6 K/W
0.8 K
/W
1 K
/W
0.5 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RM S Limit
Conduction Period
Maximum A verage On-state Power Lo ss (W)
A v erage On - state Cu r re nt ( A)
ST110S Se ries
T = 1 25°C
J
25 50 75 100 125
Maximum Allowable Ambien t Te m perat ur e (° C)
R
= 0.1 K/W - Delta R
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.6 K
/W
1 K
/W
0.8 K/W
1.2 K
/W
thS
A
0
20
40
60
80
100
120
140
160
020406080100120
180°
120°
90°
60°
30°
RMS Lim it
Conduction A ngle
M aximum Average On-state Pow er Loss (W)
Average On- state Current (A)
ST110S Se rie s
T = 12 5°C
J
Fig. 3 - On-state Power Loss Characteristics
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ST110S Series
1000
1200
1400
1600
1800
2000
2200
2400
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wave On-sta te Current (A)
Initial T = 125°C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
ST110 S Series
J
At An y Rate d Load Con ditio n A nd Wit h
Rated V A pplied Fol l owing Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01 0.1 1 10
Pul se Tr ai n D u r ation ( s)
Maximum Non Repetiti ve Su r ge Cu r rent
Versus P ul se Tr ai n Du ration. Control
Of Conduction May Not Be Maintained.
Peak Half Si ne Wave On-state Cur rent (A)
I ni tial T = 1 25 °C
No Vo l tage Reappli ed
Rated V Reappl ied
J
RRM
ST110S Series
10
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 25° C
J
In st antaneous On-sta te Current (A)
Instantaneous O n- state V oltage (V)
T = 125°C
J
ST110S Se rie s
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
ST110 S Se rie s
Steady State Value
R = 0.195 K/ W
(DC Operation)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
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ST110S Series
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj= - 4 0 ° C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load li ne for
b) Re co mm ended load lin e fo r
<=30% rated di /dt : 10V, 1 0ohms
Frequency Limited by P G(AV)
rated di/dt : 20V , 10oh ms; tr<=1 µ s
tr<= 1 µs
(1 ) PGM = 10W, tp = 4ms
(2 ) PGM = 20W, tp = 2ms
(3 ) PGM = 40W, tp = 1ms
(4 ) PGM = 60W, tp = 0.6 6ms
Device: ST110S Serie s
Rectangul ar gate pu lse
(4)
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