Semiconductor Group 1 07.96
Differential Magneto Resistor FP 425 L 90
Dimensions in mm
Features
• Double differential magneto resistor on one carrier
• Accurate intercenter spacing
• High operating temperature range
• High output voltage
• Compact construction
• Available in strip form for automatic assembly
• Optimized intercenter spacing on modules
m= 0.5 mm
• Reduced temperature dependence of offset
voltage
Typical applications
• Incremental angular encoders
• Detection of sense of rotation
• Detection of speed
• Detection of position
Semiconductor Group 2
FP 425 L 90
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as TAB.
The basic resistance of each of the magneto resistors is 90 Ω. The two series coupled
pairs of magneto resistor are actuated by an external magnetic field or can be biased by
a permanent magnet and actuated by a soft iron target.
Type Ordering Code
FP 425 L 90 Q65425-L90 (singular)
FP 425 L 90 Q65425-L0090E001 (taped)
Semiconductor Group 3
FP 425 L 90
Maximum ratings
Characteristics (TA = 25 °C)
Parameter Symbol Value Unit
Operating temperature TA– 40 / + 175 °C
Storage temperature Tstg – 40 / + 185 °C
Power dissipation1) Ptot 800 mW
Supply voltage (B = 0.2 T, TA = 25 °C) VIN 8V
Thermal conductivity
–attached to heatsink
–in still air Gthcase
GthA
20
2mW/K
mW/K
Nominal supply voltage (B = 0.2 T)2) VINN 5V
Basic resistance
(I < 1 mA, B = 0 T) R01-3 160 – 280 Ω
Center symmetry3) M≤ 3%
Relative resistance change
(R0 = R01-3,R04-6 at B = 0 T)
B = ± 0.3 T4)
B = ± 1 T
RB/R0
> 1.7
> 7
–
Temperature coefficient
B = 0 T
B = ± 0.3 T
B = ± 1 T
TCR– 0.16
– 0.38
– 0.54
%/K
%/K
%/K
1) T = Tcase
2) T = Tcase, T < 80 °C
3)
4) 1 T = 1 Tesla = 104 Gauss
MR01 2–R02 3–
–
--------------------------------= × 100% for R01-2 > R02-3
R01 2–
MR04 5–R05 6–
–
--------------------------------= × 100% for R04-5 > R05-6
R04 5–
Semiconductor Group 4
FP 425 L 90
Max. power dissipation versus
temperature
Ptot = f(T), T = Tcase,TA
Typical MR resistance
versus temperature
R01-3, 4-6 = f(TA), B = Parameter
Maximum supply voltage
versus temperature
VIN = f(T), B = 0.2 T
Typical MR resistance
versus magnetic induction B
R01-3, 4-6 = f(B), TA = 25 °C
