SEMICON COMPONENTS INC 23 D MM 8135157 0000821 9 mm T-It~i7 FEATURES: DESCRIPTION This series of high grade voltage regulator diodes is designed to meet the electrical and ee tan Seal O . environmental requirements of the commer- Ig emperature peration cial, military, industrial computer, and home Metallurgically Bonded instrument electronics markets. Complete Characteristic Listing ABSOLUTE MAXIMUM RATINGS: * 10W @ 100C Case Temp * Derate .133w/C from 100C * Storage -65C to 175C * Operation -65C to 175C * Thermal Imp 2.5C/w Temperature Rating Curve 12.5 10.0 ~ a on RATED POWER DISSIPATION (Watts) nN a 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE C Semicon 38 Components iwcSEMICON COMPONENTS INC 28 D MM 8135157 00008e2 0 mm 7-/-/7 ZENER DIODES 10 WATT RATING (DO-4) MAX. ZENER IMPEDANCE => | MAX. REVERSE LEAKAGE , + MAX, tr@ ley > | 2y@ bx p@ Var Vege ZENER . ogi a F CURRENT: OHMS | mA. | OHMS: mA vA | vouTs | VOLTS mA 1N2970 6.8 12 370 500 1.0 150 5.2 4.0 1320 1N2971 75 1.3 335 250 1.0 75 5.7 5.4 1180 1N2972 8.2 15 305 250 1.0 50 6.2 5.0 1040 1N2973 9.1 2.0 275 250 1.0 25 6.0 6.6 360 1N2974 10 3 250 250 1.0 10 7.6 7.2 860 1N2975 11 3 230 250 1.0 5 8.4 8.0 780 1N2976 12 3 210 250 1.0 5 9.1 3.6 720 1N2977 13 3 190 250 1.0 5 9.9 9.4 660 1N2978 14 3 180 250 1.0 5 10.6 10.1 600 1N2979 15 3 170 250 1.0 5 11.4 10.8 560 1N2980 16 4 155 250 1.0 5 12.2 1.5 30 1N2982 18 4 150 250 1.0 5 13.7 13.0 460 1N2983 19 4 130 250 1.0 5 14.4 13.7 440 1IN2984 20 4 125 250 1.0 5 15.2 14.4 420 1N2985 22 5 115 250 1.0 5 16.7 15.8 380 1N2986 24 5 105 250 1.0 5 18.2 17.9 350 1N2988 27 7 95 250 1.0 5 20.6 19.4 300 1N29a9 8 85 300 1.0 5 22.8 21.6 280 1N2990 3 3 75 300 1.0 5 25.1 23.8 260 14N2991 3% 10 70 300 1.0 5 27.4 25.9 230 1IN2992 39 11 65 300 1.0 5 29.7 28.1 210 1N2993 43 12 60 400 1.0 5 32.7 31.0 195 1N2995 47 14 55 400 1.0 5 35.8 33.8 175 IN2996 50 16 50 500 1.0 5 38.0 36.0 165 iN29e7 51 16 50 500 1.0 5 38.8 36.7 163 1N2998 52 16 50 500 1.0 5 39.5 37.4 160 1N2999 56 16 45 500 1.0 5 42.6 40.3 150 1+N3000 62 17 40 600 4.0 5 47.1 44.6 130 1N3001 68 1B 37 600 1.0 5 1.7 49.0 120 1N3002 75 22 33 600 1.0 5 56.0 54.0 110 +N3003 82 25 x 700 1.0 5 62.2 59.0 100 1N3004 91 35 28 800 1.0 5 69.2 65.5 85 1N3005 100 40 25 900 1.0 5 76.0 72.0 80 1N3006 105 45 25 1000 4.0 5 79.8 75.6 75 1N3007 110 55 23 1100 1.0 5 83.6 79.2 72 1N3008 120 76 20 1200 1.0 5 91.2 86.4 67 1N3009 130 100 19 1300 1.0 5 98.8 93.6 62 1N3010 140 125 18 1400 1.0 5 106.4 100.8 58 IN3O11 150 175 7 1500 1.0 5 114.0 108.0 54 1N3012 160 200 16 1600 1.0 5 121.6 115.2 50 1N3014 180 260 14 1850 1.0 136.8 129.6 46 1N3015 200 300 12 2000 1.0 5 152.0 144.0 40 1N39S3t 3.9 20 640 400 1.0 100 5 2380 1N3994T 43 1.5 580 400 1.0 400 5 2170 INS9OST 47 1.2 530 500 1.0 50 1 1940 INS996T 5.1 41 490 550 1.0 10 1 1780 1N3897T 5.6 1.0 445 600 1.0 10 1 1620 IN3SS9ST 62 om 405 750 1.0 10 2 1460 1N3S99t 6.8 1.2 370 500 1.0 10 2 1330 iN4000T 7.5 1.3 935 250 1.0 10 3 1221 NON SUFFIX TYPES Vz = 20%, A SUFFIX + 10% + V,, TEST VOLTAGE FOR *B + 5% TOLERANCE DEVICE B SUFFIX +5% STANDARD POLARITY - ANODE TO CASE + Va. TEST VOLTAGE FOR A + 10% TOLERANCE DEVICE t NON-SUFFIX TYPES V, + 10%, A" SUFFIX + 5% STANDARD POLARITY - CATHODE TO CASE ALL TYPES ADD SUFFIX LTR R FOR REVERSE POLARITY 39 Semicon omponents inc