2N5115 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5115 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5115 LOW ON RESISTANCE rDS(on) 100 LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature 55C to +200C 2N5115 Benefits: Operating Junction Temperature 55C to +200C Low On Resistance Maximum Power Dissipation ID(off) 500 pA Continuous Power Dissipation 500mW Switches directly from TTL logic MAXIMUM CURRENT 2N5115 Applications: Gate Current (Note 1) IG = 50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V 2N5115 ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 IG = 1A, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 3 6 VDS = 15V, ID = 1nA V VGS(F) Gate to Source Forward Voltage 0.7 1 IG = 1mA, VDS = 0V 1.0 VGS = 0V, ID = 15mA VDS(on) Drain to Source On Voltage 0.7 0.8 VGS = 0V, ID = 7mA 0.5 VGS = 0V, ID = 3mA IDSS Drain to Source Saturation Current (Note 2) 15 60 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current 5 500 VGS = 20V, VDS = 0V IG Gate Operating Current 5 VDS = 15V, ID = 1mA pA 10 VDS = 15V, VGS = 12V ID(off) Drain Cutoff Current 10 500 VDS = 15V, VGS = 7V 10 VDS = 15V, VGS = 5V rDS(on) Drain to Source On Resistance 100 ID = 1mA, VGS = 0V 2N5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance 4.5 mS VDS = 15V, ID = 1mA , f = 1kHz gos Output Conductance 20 S rDS(on) Drain to Source On Resistance 100 ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance 20 25 VDS = 15V, VGS = 0V, f = 1MHz pF 5 VDS = 0V, VGS = 12V, f = 1MHz Crss Reverse Transfer Capacitance 6 7 VDS = 0V, VGS = 7V, f = 1MHz 6 VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage 20 nV/Hz VDG = 10V, ID = 10mA , f = 1kHz 2N5115 SWITCHING CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS (See Packaging Information). Click To Buy td(on) Turn On Time 10 tr Turn On Rise Time 20 td(off) Turn Off Time 8 tf Turn Off Fall Time 30 VGS(L) = 7V VGS(H) = 0V ns See Switching Circuit Note 1 Absolute maximum ratings are limiting values above which 2N5115 serviceability may be impaired. Note 2 - Pulse test: PW 300 s, Duty Cycle 3% 2N5115 SWITCHING CIRCUIT PARAMETERS VDD VGG RL RG ID(on) 6V 12V 910 220 7mA Micross Components Europe Available Packages: TO-18 (Bottom View) SWITCHING TEST CIRCUIT 2N5115 in TO-18 2N5115 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.