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FEATURES
DIRECTREPLACEMENTFORSILICONIX2N5115
LOWONRESISTANCErDS
(
on
)
≤100Ω
LOWCAPACITANCE6pF
ABSOLUTEMAXIMUMRATINGS@25°C(unlessotherwisenoted)
MaximumTemperatures
StorageTemperature‐55°Cto+200°C
OperatingJunctionTemperature‐55°Cto+200°C
MaximumPowerDissipation
ContinuousPowerDissipation 500mW
MAXIMUMCURRENT
GateCurrent(Note1)IG=‐50mA
MAXIMUMVOLTAGES
GatetoDrainVoltageVGDS=30V
GatetoSourceVoltageVGSS=30V
2N5115ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYP.MAXUNITSCONDITIONS
BVGSSGatetoSourceBreakdownVoltage30 ‐‐ ‐‐
V
IG=1µA,VDS=0V
VGS
(
off
)
GatetoSourceCutoffVoltage3 ‐‐ 6VDS=‐15V,ID=‐1nA
VGS
(
F
)
GatetoSourceForwardVoltage ‐‐ ‐0.7‐1IG=‐1mA,VDS=0V
VDS(on)
DraintoSourceOnVoltage
‐‐ ‐1.0 ‐‐ VGS=0V,ID=‐15mA
‐‐ ‐0.7‐0.8VGS=0V,ID=‐7mA
‐‐ ‐0.5 ‐‐ VGS=0V,ID=‐3mA
IDSSDraintoSourceSaturationCurrent(Note2)‐15 ‐‐ ‐60mAVDS=‐15V,VGS=0V
IGSSGateReverseCurrent ‐‐ 5500
pA
VGS=20V,VDS=0V
IGGateOperatingCurrent ‐‐ ‐5 ‐‐ VDS=‐15V,ID=‐1mA
ID(off)
DrainCutoffCurrent
‐‐ ‐10 ‐‐ VDS=‐15V,VGS=12V
‐‐ ‐10‐500VDS=‐15V,VGS=7V
‐‐ ‐10 ‐‐ VDS=‐15V,VGS=5V
rDS
(
on
)
DraintoSourceOnResistance ‐‐ ‐‐ 100Ω ID=‐1mA,VGS=0V
2N5115DYNAMICELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYP.MAXUNITSCONDITIONS
gfsForwardTransconductance ‐‐ 4.5 ‐‐ mSVDS=‐15V,ID=1mA,f=1kHz
gosOutputConductance ‐‐ 20 ‐‐ µS
rDS
(
on
)
DraintoSourceOnResistance ‐‐ ‐‐ 100Ω ID=0A,VGS=0V,f=1kHz
CissInputCapacitance ‐‐ 2025
pF
VDS=‐15V,VGS=0V,f=1MHz
Crss
ReverseTransferCapacitance
‐‐ 5 ‐‐ VDS=0V,VGS=12V,f=1MHz
‐‐ 67VDS=0V,VGS=7V,f=1MHz
‐‐ 6 ‐‐ VDS=0V,VGS=5V,f=1MHz
enEquivalentNoiseVoltage ‐‐ 20 ‐‐ nV/√HzVDG=10V,ID=10mA,f=1kHz
2N5115SWITCHINGCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICUNITSCONDITIONS
td(on)TurnOnTime10
ns
VGS(L)=‐7V
VGS(H)=0V
SeeSwitchingCircuit
trTurnOnRiseTime20
td(off)TurnOffTime8
tfTurnOffFallTime30

2N5115SWITCHINGCIRCUITPARAMETERS
VDD‐6V
VGG12V
RL910Ω
RG220Ω
ID(on)‐7mA
2N5115
P-CHANNEL JFET
Linear S
y
stems re
p
laces discontinued Siliconix 2N5115
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
(
See Packa
g
in
g
Information
)
.
2N5115 Applications:
Analog Switches
Commutators
Cho
pp
ers
2N5115 Benefits:
Low On Resistance
I
D(off) ≤ 500 pA
Switches directl
y
from TTL lo
g
ic
Note1‐Absolutemaximumratingsarelimitingvaluesabovewhich2N5115serviceabilitymaybeimpaired.Note2–Pulsetest:PW≤300µs,DutyCycle≤3%
Micross Components Europe
Available Packages:
2N5115 in TO-18
2N5115 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-18 (Bottom View)
SWITCHINGTESTCIRCUIT