383
NPN Silicon Darlington Transistors BC 875
… BC 879
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 875
BC 877
BC 879
C62702-C853
C62702-C854
C62702-C855
– TO-92
ECB
123
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICA
Junction temperature Tj˚C
Total power dissipation, TC = 90 ˚C2) Ptot W
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient2) Rth JA ≤ 156 K/W
1
2
0.8 (1)
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 60
60 80
BC 875 BC 877
Peak base current IBM 200
80
100
BC 879
5
Junction - case3) Rth JC ≤ 75
●
High current gain
●
Low collector-emitter saturation voltage
●
Complementary types: BC 876, BC 878
BC 880 (PNP)
1
2
3
5.91
Siemens Aktiengesellschaft 384
BC 875
… BC 879
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
DC current gain
IC = 150 mA; VCE = 10 V1)
IC = 500 mA; VCE = 10 V1)
VCollector-emitter breakdown voltage
IC = 50 mA BC 875
BC 877
BC 879
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = VCBmax
VCB = VCBmax, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 875
BC 877
BC 879
V(BR)CB0
60
80
100
–
–
–
–
–
–
Emitter-base breakdown voltage, IE = 100 µAV(BR)EB0 5––
–hFE 1000
2000 –
––
–
Base-emitter saturation voltage1)
IC = 1 A; IB = 1 mA VBEsat – – 2.2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 200 mA, VCE = 5 V, f = 20 MHz fT– 150 –
AC characteristics
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VCEsat –
––
–1.3
1.8
nACollector cutoff current
VCE = 0.5 × VCEmax
ICE0 – – 500
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Siemens Aktiengesellschaft 385
BC 875
… BC 879
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load rthJA = f (tp)
normalized
Collector cutoff current ICB0 = f (TA)
VCB = 100 V
DC current gain hFE = f (TA)
VCE = 10 V
Siemens Aktiengesellschaft 386
BC 875
… BC 879
DC current gain hFE = f (IC)
VCE = 10 V, TA = 25 ˚C
Collector-emitter saturation voltage
IC = f (VCEsat)
Parameter = IB, TA = 25 ˚C
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Base-emitter saturation voltage
IC = f (VBEsat)
Parameter = IB, TA = 25 ˚C
387
PNP Silicon Darlington Transistors BC 876
… BC 880
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 876
BC 878
BC 880
C62702-C943
C62702-C942
C62702-C941
– TO-92
ECB
123
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICA
Junction temperature Tj˚C
Total power dissipation, TC = 90 ˚C2) Ptot W
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient2) Rth JA ≤ 156 K/W
1
2
0.8 (1)
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 60
60 80
BC 876 BC 878
Peak base current IBM 200
80
100
BC 880
5
Junction - case3) Rth JC ≤ 75
●
High current gain
●
High collector current
●
Low collector-emitter saturation voltage
●
Complementary types: BC 875, BC 877,
BC 879 (NPN)
1
2
3
5.91
Siemens Aktiengesellschaft 388
BC 876
… BC 880
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
DC current gain
IC = 150 mA; VCE = 10 V1)
IC = 500 mA; VCE = 10 V1)
VCollector-emitter breakdown voltage
IC = 50 mA BC 876
BC 878
BC 880
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = VCBmax
VCB = VCBmax, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 876
BC 878
BC 880
V(BR)CB0
60
80
100
–
–
–
–
–
–
Emitter-base breakdown voltage, IE = 100 µAV(BR)EB0 5––
–hFE 1000
2000 –
––
–
Base-emitter saturation voltage1)
IC = 1000 mA; IB = 1 mA VBEsat – – 2.2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 200 mA, VCE = 5 V, f = 20 MHz fT– 150 –
AC characteristics
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
IC = 1000 mA, IB = 1 mA
VCEsat –
––
–1.3
1.8
Collector cutoff current
VCE = 0.5 × VCEmax
ICE0 – – 500
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Siemens Aktiengesellschaft 389
BC 876
… BC 880
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load rthJA = f (tp)
normalized
Collector cutoff current ICB0 = f (TA)
VCB = 100 V
DC current gain hFE = f (TA)
VCE = 10 V
Siemens Aktiengesellschaft 390
BC 876
… BC 880
DC current gain hFE = f (IC)
VCE = 10 V, TA = 25 ˚C
Collector-emitter saturation voltage
IC = f (VCEsat)
Parameter = IB, TA = 25 ˚C
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Base-emitter saturation voltage
IC = f (VBEsat)
Parameter = IB, TA = 25 ˚C