Ordering Information
Specify part number followed by
Option Number (if desired).
4N25-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
Agilent 4N25
Phototransistor Optocoupler
General Purpose Type
Data Sheet
Features
• Response time (tr: typ., 3 µs at
VCE = 10 V, IC = 2 mA, RL = 100 Ω)
• Current Transfer Ratio
(CTR: min. 20% at IF = 10 mA,
VCE = 10 V)
• Input-output isolation voltage
(Viso = 2500 Vrms)
• Dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2
approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• I/O interfaces for computers
• System appliances, measuring
instruments
• Signal transmission between
circuits of different potentials and
impedances
Description
The 4N25 is an optocoupler for
general purpose applications. It
contains a light emitting diode
optically coupled to a photo-
transistor. It is packaged in a 6-pin
DIP package and available in wide-
lead spacing option and lead bend
SMD option. Response time, tr, is
typically 3 µs and minimum CTR is
20% at input current of 10 mA.
Functional Diagram
Schematic
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
654
123
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
1
2
ANODE
CATHODE
V
F
+
–
I
F
6
5
4
BASE
COLLECTOR
EMITTER
I
C
2
Package Outline Drawings
4N25-000E
4N25-W00E
4N25-300E
Y Y WW
6.5 ± 0.5
(0.256)
3.5 ± 0.5
(0.138)
3.3 ± 0.5
(0.13)
0.5 TYP.
(0.02)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
2.8 ± 0.5
(0.110)
7.3 ± 0.5
(0.287) 7.62 ± 0.3
(0.3)
0.26
(0.010)
7.62 ~ 9.98
LEAD FREE
ANODE
DATE CODE *1
A 4N25 V
DIMENSIONS IN MILLIMETERS AND (INCHES)
Y Y WW
6.5 ± 0.5
(0.256)
3.5 ± 0.5
(0.138)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
2.8 ± 0.5
(0.110)
7.3 ± 0.5
(0.287) 7.62 ± 0.3
(0.3)
0.26
(0.010)
10.16 ± 0.5
(0.4)
LEAD FREE
ANODE
DATE CODE *1
A 4N25 6.9 ± 0.5
(0.272)
2.3 ± 0.5
(0.09)
DIMENSIONS IN MILLIMETERS AND (INCHES)
1.2 ± 0.1
(0.047)
2.54 ± 0.25
(0.1)
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
0.26
(0.010)
10.16 ± 0.3
(0.4)
1.0 ± 0.25
(0.39)
DATE CODE *1
Y Y WW
6.5 ± 0.5
(0.256)
LEAD FREE
ANODE
A 4N25
3.5 ± 0.5
(0.138)
0.35 ± 0.25
(0.014)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4N25-060E
Y Y WW
6.5 ± 0.5
(0.256)
3.5 ± 0.5
(0.138)
3.3 ± 0.5
(0.13)
0.5 TYP.
(0.02)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
2.8 ± 0.5
(0.110)
7.3 ± 0.5
(0.287) 7.62 ± 0.3
(0.3)
0.26
(0.010)
7.62 ~ 9.98
LEAD FREE
ANODE
DATE CODE *1
A 4N25
DIMENSIONS IN MILLIMETERS AND (INCHES)
3
30 seconds
60 ~ 150 sec 90 sec 60 sec
60 sec
25°C
150°C
200°C
250°C260°C (Peak Temperature)
217°C
Time (sec)
Temperature (°C)
Absolute Maximum Ratings
Storage Temperature, TS–55˚C to +150˚C
Operating Temperature, TA–55˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF80 mA
Reverse Input Voltage, VR6 V
Input Power Dissipation, PI150 mW
Collector Current, IC100 mA
Collector-Emitter Voltage, VCEO 30 V
Emitter-Collector Voltage, VECO 7 V
Collector-Base Voltage, VCBO 70 V
Collector Power Dissipation 150 mW
Total Power Dissipation 250 mW
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 2500 Vrms
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
4
Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Forward current vs. forward voltage.
IF – FORWARD CURRENT – mA
0
TA – AMBIENT TEMPERATURE – °C
-25 75 125
60
25
20
40
100
0 50 100-55
80
P
C
– COLLECTOR POWER DISSIPATION – mW
0
T
A
– AMBIENT TEMPERATURE – °C
-25 75 125
100
25
50
200
0 50 100-55
150
I
F
– FORWARD CURRENT – mA
1
V
F
– FORWARD VOLTAGE – V
2.0 3.0
10
5
500
1.00
T
A
= 75°C
0.5 1.5 2.5
2
20
50
100
200 T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
* CTR = x 100%
IC
IF
Electrical Specifications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF– 1.2 1.5 V IF = 10 mA
Reverse Current IR––10µAV
R = 4 V
Terminal Capacitance Ct– 50 – pF V = 0, f = 1 KHz
Collector Dark Current ICEO ––50nAV
CE = 10 V, IF = 0
Collector-Emitter Breakdown Voltage BVCEO 30––VI
C = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 7––VI
E = 10 µA, IF = 0
Collector-Base Breakdown Voltage BVCBO 70––VI
C = 0.1 mA, IF = 0
Collector Current IC2––mAI
F = 10 mA
*Current Transfer Ratio CTR 20 – – % VCE = 10 V
Collector-Emitter Saturation Voltage VCE(sat) – 0.1 0.5 V IF = 50 mA, IC = 2 mA
Response Time (Rise) tr–3–µsV
CE = 10 V, IC = 2 mA
Response Time (Fall) tf–3–µsR
L = 100 Ω
Isolation Resistance Riso 5 x 1010 1 x 1011 –ΩDC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf– 1 – pF V = 0, f = 1 MHz
5
Figure 4. Current transfer ratio vs. forward
current.
Figure 5. Collector current vs. collector-
emitter voltage.
Figure 6. Relative current transfer ratio vs.
temperature.
Figure 7. Collector-emitter saturation
voltage vs. temperature.
Figure 8. Collector dark current vs.
temperature.
Figure 9. Response time vs. load resistance.
I
C
– COLLECTOR CURRENT – mA
0
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
10 15
10
5
15
50
P
C
(MAX.)
T
A
= 25°C I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
RELATIVE CURRENT TRANSFER RATIO – %
0
200
100
300
V
CE
= 10 V
I
F
= 10 mA
T
A
– AMBIENT TEMPERATURE – °C
-25 75250 50 100-55
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0
T
A
– AMBIENT TEMPERATURE – °C
-25 7525
0.1
0.3
0 50 100-55
0.2
I
C
= 2 mA
I
F
= 50 mA
I
CEO
– COLLECTOR DARK CURRENT – A
10
-13
-25 80 125200 40 100-55
T
A
– AMBIENT TEMPERATURE – °C
V
CE
= 10 V
10
-12
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
5
5
5
5
5
5
5
RESPONSE TIME – µs
0.1
RL – LOAD RESISTANCE – kΩ
0.1 5
1
0.5
0.2
0.5
100
0.2 2 100.05
2
20 50
VCE = 10 V
IC = 2 mA
TA = 25°C
ts
td
tf
tr
1
5
10
20
50
CTR – CURRENT TRANSFER RATIO – %
0
I
F
– FORWARD CURRENT – mA
0.2 5 100
30
1
10
20
50
0.5 2 100.1
40
V
CE
= 10 V
T
A
= 25°C
20 50
500 kΩ100 kΩ
R
BE
=
Figure 11. Collector-emitter saturation
voltage vs. forward current.
Figure 10. Frequency response.
VOLTAGE GAIN AV – dB
-20
f – FREQUENCY – kHz
1 20 500
-5
5
-15
-10
5
210500.5
0
100 200
R
L
= 10 kΩ
V
CE
= 5 V
I
C
= 2 mA
T
A
= 25°C
R
L
= 1 kΩ
R
L
= 100 Ω
0
I
F
– FORWARD CURRENT – mA
20 30
2
7
100 51525
1
3
4
5
6
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
T
A
= 25°C
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 2 mA
I
C
= 3 mA
I
C
= 6 mA
I
C
= 7 mA
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand,
Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0292EN
November 3, 2004
5989-1733EN
V
CC
R
D
INPUT
R
L
OUTPUT
INPUT
OUTPUT 10%
90%
t
t t
t
f
s
r
d
Test Circuit for Response Time Test Circuit for Frequency Response
VCC
RD
RL
OUTPUT
~
