1/28
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© 2009 ROHM Co., Ltd. All rights reserved.
Single-chip built-in FET type Switching Regulator Series
High-efficiency Step-down
Switching Regulators
with Built-in Power MOSFET
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
●Description
ROHM’s high efficiency step-down switching regulators (BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN)
are the power supply designed to produce a low voltage including 1 volts from 5/3.3 volts power supply line. Offers high
efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control
system to provide faster transient response to sudden change in load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET)
and SLLMTM (Simple Light Load Mode)
3) Incorporates soft-start function.
4) Incorporates thermal protection and ULVO functions.
5) Incorporates short-current protection circuit with time delay function.
6) Incorporates shutdown function
7) Employs small surface mount package
MSOP8 (BD9106FVM,BD9107FVM,BD9109FVM), HSON8 (BD9120HFN), SON008V5060 (BD9110NV)
●Use
Power supply for LSI including DSP, Micro computer and ASIC
●Line up
Parameter BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Input Voltage 4.0～5.5V 4.0～5.5V 4.5～5.5V 4.5～5.5V 2.7～4.5V
Output Voltage Adjustable
(1.0～2.5V)
Adjustable
(1.0～1.8V) 3.30±2% Adjustable
(1.0～2.5V)
Adjustable
(1.0～1.5V)
Output Current 0.8A Max. 1.2A Max. 0.8A Max. 2.0A Max. 0.8A Max.
UVLO threshold Voltage 3.4V Typ. 2.7V Typ. 3.8V Typ. 3.7V Typ. 2.5V Typ.
Short-current protection
with time delay function built-in
Soft start function built-in
Standby current 0μA Typ.
Operating Temperature Range -25～+85℃ -25～+85℃ -25～+85℃ -25～+105℃ -25～+85℃
Package MSOP8 SON008V5060 HSON8
●Operating Conditions (Ta=25℃)
Parameter Symbol
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
VCC voltage VCC *1 4.0 5.5 4.0 5.5 4.5 5.5 4.5 5.5 2.7 4.5 V
PVCC voltage PVCC *1 4.0 5.5 4.0 5.5 4.5 5.5 4.5 5.5 2.7 4.5 V
EN voltage EN 0 VCC 0 VCC 0 VCC 0 VCC 0 VCC V
SW average output current Isw *1 - 0.8 - 1.2 - 0.8 - 2.0 - 0.8 A
*1 Pd should not be exceeded.
No.09027EAT33
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
2/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Absolute Maximum Rating (Ta=25℃)
Parameter Symbol Limits Unit
BD910FVM BD9110NV BD9120HFN
VCC voltage VCC -0.3～+7
*
2 -0.3～+7
*
2 -0.3～+7
*
2 V
PVCC voltage PVCC -0.3～+7
*
2 -0.3～+7
*
2 -0.3～+7
*
2 V
EN voltage EN -0.3～+7 -0.3～+7 -0.3～+7 V
SW,ITH voltage SW,ITH -0.3～+7 -0.3～+7 -0.3～+7 V
Power dissipation 1 Pd1 387.5
*
3 900
*
5 1350
*
7 mW
Power dissipation 2 Pd2 587.4
*
4 3900
*
6 1750
*
8 mW
Operating temperature range Topr -25～+85 -25～+105 -25～+85 ℃
Storage temperature range Tstg -55～+150 -55～+150 -55～+150 ℃
Maximum junction temperature Tjmax +150 +150 +150 ℃
*2 Pd should not be exceeded.
*3 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*4 Derating in done 4.7mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB.
*5 Derating in done 7.2mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (3%) of copper on the back side).
*6 Derating in done 31.2mW/℃ for temperatures above Ta=25℃, Mounted on a board according to JESD51-7.
*7 Derating in done 10.8mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (7%) of copper on the back side).
*8 Derating in done 14mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (65%) of copper on the back side).
●Electrical Characteristics
◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20k, R2=10k unless otherwise specified.)
Parameter Symbol Min. Typ. Max. Unit Conditions
Standby current ISTB - 0 10 A EN=GND
Bias current ICC - 250 400 A
EN Low voltage VENL - GND 0.8 V Standby mode
EN High voltage VENH 2.0 VCC - V Active mode
EN input current IEN - 1 10 A VEN=5V
Oscillation frequency FOSC 0.8 1 1.2 MHz
Pch FET ON resistance *9 RONP - 0.35 0.60 PVCC=5V
Nch FET ON resistance *9 RONN - 0.25 0.50 PVCC=5V
ADJ Voltage VADJ 0.780 0.800 0.820 V
Output voltage *9 VOUT - 1.200 - V
ITH SInk current ITHSI 10 20 - A ADJ=H
ITH Source Current ITHSO 10 20 - A ADJ=L
UVLO threshold voltage VUVLOTh 3.2 3.4 3.6 V VCC=HL
UVLO hysteresis voltage VUVLOHys 50 100 200 mV
Soft start time TSS 1.5 3 6 ms
Timer latch time TLATCH 0.5 1 2 ms
*9 Design Guarantee（Outgoing inspection is not done on all products）
◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20k, R2=10k unless otherwise specified.)
Parameter Symbol Min. Typ. Max. Unit Conditions
Standby current ISTB - 0 10 A EN=GND
Bias current ICC - 250 400 A
EN Low voltage VENL - GND 0.8 V Standby mode
EN High voltage VENH 2.0 VCC - V Active mode
EN input current IEN - 1 10 A VEN=5V
Oscillation frequency FOSC 0.8 1 1.2 MHz
Pch FET ON resistance *9 RONP - 0.35 0.60 PVCC=5V
Nch FET ON resistance *9 RONN - 0.25 0.50 PVCC=5V
ADJ Voltage VADJ 0.780 0.800 0.820 V
Output voltage *9 VOUT - 1.200 - V
ITH SInk current ITHSI 10 20 - A VOUT =H
ITH Source Current ITHSO 10 20 - A VOUT =L
UVLO threshold voltage VUVLOTh 2.6 2.7 2.8 V VCC=HL
UVLO hysteresis voltage VUVLOHys 150 300 600 mV
Soft start time TSS 0.5 1 2 ms
Timer latch time TLATCH 0.5 1 2 ms
*9 Design Guarantee（Outgoing inspection is not done on all products）
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
3/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Electrical Characteristics
◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.)
Parameter Symbol Min. Typ. Max. Unit Conditions
Standby current ISTB - 0 10 A EN=GND
Bias current ICC - 250 400 A
EN Low voltage VENL - GND 0.8 V Standby mode
EN High voltage VENH 2.0 VCC - V Active mode
EN input current IEN - 1 10 A VEN=5V
Oscillation frequency FOSC 0.8 1 1.2 MHz
Pch FET ON resistance
*
9 RONP - 0.35 0.60 PVCC=5V
Nch FET ON resistance
*
9 RONN - 0.25 0.50 PVCC=5V
Output voltage VOUT 3.234 3.300 3.366 V
ITH SInk current ITHSI 10 20 - A VOUT =H
ITH Source Current ITHSO 10 20 - A VOUT =L
UVLO threshold voltage VUVLO1 3.6 3.8 4.0 V VCC=H→L
UVLO hysteresis voltage VUVLO2 3.65 3.9 4.2 V VCC=L→H
Soft start time TSS 0.5 1 2 ms
Timer latch time TLATCH 1 2 3 ms SCP/TSD operated
Output Short circuit
Threshold Voltage VSCP - 2 2.7 V VOUT =H→L
*9 Design Guarantee（Outgoing inspection is not done on all products）
◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10k,R2=5k unless otherwise specified.)
Parameter Symbol Min. Typ. Max. Unit Conditions
Standby current ISTB - 0 10 A EN=GND
Bias current ICC - 250 350 A
EN Low voltage VENL - GND 0.8 V Standby mode
EN High voltage VENH 2.0 VCC - V Active mode
EN input current IEN - 1 10 A VEN=5V
Oscillation frequency FOSC 0.8 1 1.2 MHz
Pch FET ON resistance
*
9 RONP - 200 320 m PVCC=5V
Nch FET ON resistance
*
9 RONN - 150 270 m PVCC=5V
ADJ Voltage VADJ 0.780 0.800 0.820 V
Output voltage
*
9 VOUT - 1.200 - V
ITH SInk current ITHSI 10 20 - A VOUT =H
ITH Source Current ITHSO 10 20 - A VOUT =L
UVLO threshold voltage VUVLOTh 3.5 3.7 3.9 V VCC=H→L
UVLO hysteresis voltage VUVLOHys 50 100 200 mV
Soft start time TSS 2.5 5 10 ms
Timer latch time TLATCH 0.5 1 2 ms
*9 Design Guarantee（Outgoing inspection is not done on all products）
◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20k, R2=10k unless otherwise specified.)
Parameter Symbol Min. Typ. Max. Unit Conditions
Standby current ISTB - 0 10 A EN=GND
Bias current ICC - 200 400 A
EN Low voltage VENL - GND 0.8 V Standby mode
EN High voltage VENH 2.0 VCC - V Active mode
EN input current IEN - 1 10 A VEN=3.3V
Oscillation frequency FOSC 0.8 1 1.2 MHz
Pch FET ON resistance *9 RONP - 0.35 0.60 PVCC=3.3V
Nch FET ON resistance *9 RONN - 0.25 0.50 PVCC=3.3V
ADJ Voltage VADJ 0.780 0.800 0.820 V
Output voltage *9 VOUT - 1.200 - V
ITH SInk current ITHSI 10 20 - A VOUT =H
ITH Source Current ITHSO 10 20 - A VOUT =L
UVLO threshold voltage VUVLO1 2.400 2.500 2.600 V VCC=H→L
UVLO hysteresis voltage VUVLO2 2.425 2.550 2.700 V VCC=L→H
Soft start time TSS 0.5 1 2 ms
Timer latch time TLATCH 1 2 3 ms SCP/TSD operated
Output Short circuit
Threshold Voltage VSCP - VOUT×0.5 VOUT×0.7 V VOUT =H→L
*9 Design Guarantee（Outgoing inspection is not done on all products）
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
4/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.0
0.5
1.0
1.5
2.0
0123
OUTPUT CURRENT:IOUT [A]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
【VOUT=1.8V】
0.0
0.5
1.0
1.5
2.0
012345
INPUT VOLTAGE:VCC[V]
OUTPUT VOLTAGE:VOUT[V]
Ta= 25 ℃
Io=0A
【VOUT=1.8V】
0.0
0.5
1.0
1.5
2.0
012345
EN VOLTAGE:VEN[V]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
Io=0A
【VOUT=1.8V】
1.75
1.76
1.77
1.78
1.79
1.80
1.81
1.82
1.83
1.84
1.85
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
OUTPUT VOLTAGE:VOUT[V]
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-25-15-5 5 15 2535 4555 6575 85
TEMPERATURE:Ta[℃]
FREQUENCY:FOSC[MHz]
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
OUTPUT CURRENT:IOUT[mA]
EFFICIENCY:
η[%]
VCC=5V
Io=0A
【VOUT=1.8V】
VCC=5V
Ta= 25 ℃
【VOUT=1.8V】VCC=5V
●Characteristics data【BD9106FVM】
Fig.1 Vcc-Vout Fig.2 Ven-Vout Fig.3 Iout-Vout
Fig.4 Ta-Vout Fig.5 Efficiency Fig.6 Ta-Fosc
Fig.7 Ta-Ronn, Ronp Fig.8 Ta-Ven Fig.9 Ta-Icc
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
EN VOLTAGE:VEN[V]
0
50
100
150
200
250
300
350
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
CIRCUIT CURRENT:ICC [μA]
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
ON RESISTANCE:R ON [Ω]
PMOS
NMOS
VCC=5V
VCC=5V VCC=5V
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
5/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.8
0.9
1
1.1
1.2
44.555.5
INPUT VOLTAGE:VCC[V]
FREQUENCY:FOSC[MHz]
VOUT
VCC=PVCC
=EN
SW
VOUT
VCC=5V
T
a
=2
5
℃
【SLLM control VOUT=1.8V】
【VOUT=1.8V】
VCC=5V
Ta= 25 ℃
Io=0A
Fig.10 Vcc-Fosc Fig.11 Soft start waveform Fig.12 SW waveform Io=10mA
Fig.13 SW waveform Io=200mA
Fig. 14 Transient response
Io=100→600mA(10s)
Fig.15 Transient response
Io=600→100mA(10s)
VOUT
IOUT
VCC=5V
T
a
=2
5
℃
【VOUT=1.8V】
VOUT
IOUT
VCC=5V
Ta
=
25
℃
【VOUT=1.8V】
VOUT
VCC=5V
T
a
=2
5
℃
SW
【PWM control V
OUT=1.8V】
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
6/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.0
0.5
1.0
1.5
2.0
012345
INPUT VOLTAGE:VCC[V]
OUTPUT VOLTAGE:VOUT[V]
Ta= 25 ℃
Io=0A
0.0
0.5
1.0
1.5
2.0
0123
OUTPUT CURRENT:IOUT [A]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
0.0
0.5
1.0
1.5
2.0
01 23 45
EN VOLTAGE:VEN[V]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
Io=0A
【VOUT=1.5V】 【VOUT=1.5V】 【VOUT=1.5V】
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000 10000
OUTPUT CURRENT:IOUT[mA]
EFFICIENCY:
η[%]
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-25 -15 -5 5 15 25 35 45 55 65 75 85
TEMPERATURE:Ta[℃]
FREQUENCY:FOSC[MHz]
1.45
1.46
1.47
1.48
1.49
1.50
1.51
1.52
1.53
1.54
1.55
-25-15-5 5 1525 354555657585
TEMPERATURE:Ta[℃]
OUTPUT VOLTAGE:VOUT[V]
【VOUT=1.5V】 【VOUT=1.5V】
VCC=5V
Io=0A
VCC=5V
Ta= 25 ℃
VCC=5V
●Characteristics data【BD9107FVM】
Fig.16 Vcc-Vout Fig.17 Ven-Vout Fig.18 Iout-Vout
Fig.19 Ta-Vout Fig.20 Efficiency Fig.21 Ta-Fosc
Fig.22 Ta-RONN, RONP Fig.23 Ta-VEN Fig.24 Ta-ICC
Fig.22 温度-NMOS FET ON 抵抗 0
50
100
150
200
250
300
350
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
CIRCUIT CURRENT:ICC[μA]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
EN VOLTAGE:VEN[V]
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
ON RESISTANCE:RON[Ω]
PMOS
NMOS
VCC=5V
VCC=5V VCC=5V
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
7/28
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© 2009 ROHM Co., Ltd. All rights reserved.
Fig.25 Vcc-Fosc Fig.26 Soft start waveform Fig.27 SW waveform Io=10mA
Fig.28 SW waveform Io=500mA
Fig. 29 Transient response
Io=100→600mA(10s)
Fig.30 Transient response
Io=600→100mA(10s)
0.8
0.9
1
1.1
1.2
44.555.5
INPUT VOLTAGE:VCC[V]
FREQUENCY:FOSC[MHz]
VCC=5V
Ta= 25 ℃
【
SLLM control VOUT=1.5V
】
VOUT
VCC=PVCC
=EN
【VOUT=1.5V】
VCC=5V
Ta= 25 ℃
Io=0
A
VOUT
IOUT
VCC=5V
T
a
=2
5
℃
【VOUT=1.5V】
SW
VOUT
VCC=5V
Ta
=
25
℃
【PWM control VOUT=1.5V】
VCC=5V
T
a
=2
5
℃
【VOUT=1.5V】
VOUT
IOUT
SW
VOUT
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
8/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
EN VOLTAGE:VEN[V]
0
50
100
150
200
250
300
350
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
CIRCUIT CURRENT:ICC[μA]
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
ON RESISTANCE:RON[Ω]
0.0
1.0
2.0
3.0
4.0
01 23
OUTPUT CURRENT:IOUT [A]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
0.0
1.0
2.0
3.0
4.0
01 23 45
EN VOLTAGE:VEN[V]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
Io=0
A
0.0
1.0
2.0
3.0
4.0
012345
INPUT VOLTAGE:VCC[V]
OUTPUT VOLTAGE:VOUT[V]
Ta= 25 ℃
Io=0A
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
OUTPUT CURRENT:IOUT[mA]
EFFICIENCY:
η[%]
3.00
3.05
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
OUTPUT VOLTAGE:VOUT[V]
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-25 -15 -5 5 15 25 35 45 55 65 75 85
TEMPERATURE:Ta[℃]
FREQUENCY:FOSC[MHz]
VCC=5V
Io=0A
VCC=5V
Ta= 25 ℃
VCC=5V
●Characteristics data【BD9109FVM】
Fig.31 Vcc-Vout Fig.32 Ven-Vout Fig.33 Iout-Vout
Fig. 34 Ta-Vout Fig.35 Efficiency Fig.36 Ta-Fosc
Fig.37 Ta-Ronn, Ronp Fig.38 Ta-Ven Fig.39 Ta-Icc
PMOS
NMOS
VCC=5V VCC=5V VCC=5V
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
9/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.8
0.9
1
1.1
1.2
44.555.5
INPUT VOLTAGE:VCC[V]
FREQUENCY:FOSC[MHz]
Fig.40 Vcc-Fosc Fig.41 Soft start waveform Fig.42 SW waveform Io=10mA
Fig.43 SW waveform Io=500mA
Fig. 44 Transient response
Io=100→600mA(10s)
Fig.45 Transient response
Io=600→100mA(10s)
VCC=5V
Ta
=
25
℃
SW
VOUT
VCC=5V
Ta= 25 ℃
【PWM control】
IOUT
VOUT
VCC=5V
Ta= 25 ℃
Io=0
A
SW
VOUT
VCC=5V
T
a
=2
5
℃
【SLLM control】
VOUT
VCC=PVCC
=EN
VOUT
IOUT
VCC=5V
T
a
=2
5
℃
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
10/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-25-15-5 5 152535455565758595105
TEMPERATURE:Ta[℃]
EN VOLTAGE:VEN[V]
VCC=5V
0
50
100
150
200
250
300
350
400
-25-15-5 5 152535455565758595105
TEMPERATURE:Ta[℃]
CIRCUIT CURRENT:ICC [μA]
VCC=5V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-25-15-5 5 152535455565 758595105
TEMPERATURE:Ta[℃]
ON RESISTANCE:R ON [Ω]
PMOS
NMOS
VCC=5V
0.0
0.5
1.0
1.5
2.0
01 234
OUTPUT CURRENT:IOUT [A]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
0.0
0.5
1.0
1.5
2.0
012345
INPUT VOLTAGE:VCC[V]
OUTPUT VOLTAGE:VOUT[V]
Ta= 25 ℃
Io=0A
0.0
0.5
1.0
1.5
2.0
012345
EN VOLTAGE:VEN[V]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Ta= 25 ℃
Io=0A
【VOUT=1.4V】 【VOUT=1.4V】 【VOUT=1.4V】
0
10
20
30
40
50
60
70
80
90
100
10 100 1000 10000
OUTPUT CURRENT:IOUT[mA]
EFFICIENCY:
η[%]
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-25-15-5 5 152535455565 758595105
TEMPERATURE:Ta[℃]
FREQUENCY:FOSC[MHz]
1.35
1.36
1.37
1.38
1.39
1.40
1.41
1.42
1.43
1.44
1.45
-25-15-5 5152535455565758595105
TEMPERATURE:Ta[℃]
OUTPUT VOLTAGE:VOUT[V]
VCC=5V
Io=0A
【VOUT=1.4V】
VCC=5V
Ta= 25 ℃
【VOUT=1.4V】 VCC=5V
●Characteristics data【BD9110NV】
Fig.46 Vcc-Vout Fig.47 Ven-Vout Fig.48 Iout-Vout
Fig. 49 Ta-Vout Fig.50 Efficiency Fig.51 Ta-Fosc
Fig.52 Ta-Ronn, Ronp Fig.53 Ta-Ven Fig.54 Ta-Icc
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
11/28
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© 2009 ROHM Co., Ltd. All rights reserved.
Fig.55 Vcc-Fosc Fig.56 Soft start waveform Fig.57 SW waveform Io=10mA
Fig.58 SW waveform Io=500mA
Fig. 59 Transient response
Io=100→600mA(10s)
Fig.60 Transient response
Io=600→100mA(10s)
VOUT
IOUT VCC=5V
Ta= 25
℃
【VOUT=1.4V】VOUT
IOUT
VCC=5V
Ta= 25 ℃
【VOUT=1.4V】
SW
VOUT VCC=5V
Ta= 25 ℃
【PWM control V
OUT=1.4V】
0.8
0.9
1
1.1
1.2
4.555.5
INPUT VOLTAGE:VCC[V]
FREQUENCY:FOSC[MHz]
Ta= 25 ℃
VOUT
VCC=PVCC
=EN
VCC=5V
Ta= 25 ℃
Io=0A
SW
VOUT
VCC=5V
Ta
=
25
℃
【SLLM control VOUT=1.4V】
【VOUT=1.4V】
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
12/28
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© 2009 ROHM Co., Ltd. All rights reserved.
0.0
0.5
1.0
1.5
2.0
012345
INPUT VOLTAGE:VCC[V]
OUTPUT VOLTAGE:VOUT[V]
Ta= 25 ℃
Io=0A
0.0
0.5
1.0
1.5
2.0
012345
EN VOLTAGE:VEN[V]
OUTPUT VOLTAGE:VOUT[V]
VCC=3.3V
0.0
0.5
1.0
1.5
2.0
0123
OUTPUT CURRENT:IOUT [A]
OUTPUT VOLTAGE:VOUT[V]
【VOUT=1.5V】
Io=0A
【VOUT=1.5V】 【VOUT=1.5V】
VCC=3.3V
Ta= 25 ℃
1.45
1.46
1.47
1.48
1.49
1.50
1.51
1.52
1.53
1.54
1.55
-25-15-5 5 1525 3545 55 6575 85
TEMPERATURE:Ta[℃]
OUTPUT VOLTAGE:VOUT[V]
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
FREQUENCY:FOSC[MHz]
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
OUTPUT CURRENT:IOUT[mA]
EFFICIENCY:
η[%]
VCC=3.3V
Io=0A
【VOUT=1.5V】
VCC=3.3V
Ta= 25 ℃
【VOUT=1.5V】 VCC=3.3V
●Characteristics data【BD9120HFN】
Fig.61 Vcc-Vout Fig.62 Ven-Vout Fig.63 Iout-Vout
Fig. 64 Ta-Vout Fig.65 Efficiency Fig.66 Ta-Fosc
Fig.67 Ta-Ronn, Ronp Fig.68 Ta-Ven Fig.69 Ta-Icc
Ta= 25 ℃
Fig. 64 Ta-VOUT
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
ON RESISTANCE:R ON [Ω]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-25-15-5 5 1525354555657585
TEMPERATURE:Ta[℃]
EN VOLTAGE:VEN[V]
0
30
60
90
120
150
180
210
240
270
300
-25-15 -5 5 1525 35455565 7585
TEMPERATURE:Ta[℃]
CIRCUIT CURRENT:ICC [μA]
PMOS
NMOS
VCC=3.3V VCC=3.3V VCC=3.3V
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
13/28
www.rohm.com 2009.05 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
0.8
0.9
1
1.1
1.2
2.7 3.6 4.5
INPUT VOLTAGE:VCC[V]
FREQUENCY:FOSC[MHz]
Ta= 25 ℃
VOUT
VCC=PVCC
=EN
VCC=3.3
V
Ta= 25 ℃
Io=0
A
SW
VOUT
VCC=3.3
V
Ta= 25 ℃
【SLLM control VOUT=1.5V】
【VOUT=1.5V】
Fig.70 Vcc-Fosc Fig.71 Soft start waveform Fig.72 SW waveform Io=10mA
Fig.73 SW waveform Io=200mA
Fig. 74 Transient response
Io=100→600mA(10s)
Fig.75 Transient response
Io=600→100mA(10µs)
VOUT
IOUT
VOUT
IOUT VCC=3.3
V
Ta= 25 ℃
【VOUT=1.5V】
VCC=3.3V
Ta
=
25
℃
【VOUT=1.5V】
SW
VOUT
VCC=3.3V
Ta= 25 ℃
【PWM control VOUT=1.5V】
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
14/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Block Diagram, Application Circuit
【BD9106FVM, BD9107FVM】
Fig.76 BD9106FVM,BD9107FVM TOP View Fig.77 BD9106FVM,BD9107FVM Block Diagram
【BD9109FVM】
Fig.78 BD9109FVM TOP View Fig.79. BD9109FVM Block Diagram
8
VCC
7
PVCC
6
SW
5
PGND
1
A
DJ
2 ITH
3 EN
4 GND
TOP View
8
VCC
7
PVCC
6
SW
5
PGND
1 VOUT
2 ITH
3 EN
4 GND
TOP View
VREF
OSC
UVLO
TSD
Current
Sense/
Protect
Driver
Logic
+
Soft
Start
8
7
6
5
4
21
3
RQ
S
EN
VCC
PVCC
10µF
5V
Input
4.7µH
SW
10µF
Output
PGND
GND
ITH
A
DJ
VCC
SLOPE
Current
Comp.
Gm Amp.
CLK
VCC
VREF
OSC
UVLO
TSD
Current
Sense/
Protect
Driver
Logic
+
Soft
Start
8
7
6
5
4
21
3
RQ
S
EN
VCC
PVCC
10µF
5V
Input
4.7µH
SW
10µF
Output
PGND
GND
ITH VOUT
VCC
SLOPE
Current
Comp.
Gm Amp.
CLK
VCC
SCP
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
15/28
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© 2009 ROHM Co., Ltd. All rights reserved.
【BD9110NV】
Fig.80 BD9110NV TOP View Fig.81 BD9110NV Block Diagram
【BD9120HFN】
Fig.82 BD9120HFN TOP View Fig.83 BD9120HFN Block Diagram
ADJ 1
VCC 2
ITH 3
GND 4
8 EN
7 PVCC
6 SW
5 PGND
TOP View
Output
5V
Input
PVCC
PGND
SW
GND
Gm Amp.
2.2µH
VCC
R
S
Q
OSC
UVLO
TSD
+
22µF
VCC
VCC
CLK
SLOPE
EN
Current
Comp
10µF
8
7
2
6
5
4
Soft
Start
Current
Sense/
Protect
+
Driver
Logic
+
VREF
ITH
A
DJ
RITH CITH
3
1
R1 R2
ADJ
ITH
EN
GND
VCC
PVCC
SW
PGND
8
1
2
3
45
6
7
TOP View
3.3V
Input
PVCC
PGND
SW
GND
Output
Gm Amp.
4.7µH
VCC
R
S
Q
OSC
UVLO
TSD
+
10µF
VCC
VCC
CLK
SLOPE
EN
Current
Comp
10µF
Soft
Start
Current
Sense/
Protect
+
Driver
Logic
+
VREF
ITH
A
DJ
RITH CITH
R1 R2
3
8
7
6
5
4
12
SCP
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
16/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Pin number and function
【BD9106FVM, BD9107FVM, BD9109FVM】
Pin No. Pin name PIN function
1 ADJ/VOUT Output voltage detect pin/ ADJ for BD9106･07FVM
2 ITH GmAmp output pin/Connected phase compensation capacitor
3 EN Enable pin(Active High)
4 GND Ground
5 PGND Nch FET source pin
6 SW Pch/Nch FET drain output pin
7 PVCC Pch FET source pin
8 VCC VCC power supply input pin
【BD9110NV】
Pin No. Pin name PIN function
1 ADJ Output voltage adjust pin
2 VCC VCC power supply input pin
3 ITH GmAmp output pin/Connected phase compensation capacitor
4 GND Ground
5 PGND Nch FET source pin
6 SW Pch/Nch FET drain output pin
7 PVCC Pch FET source pin
8 EN Enable pin(Active High)
【BD9120HFN】
Pin No. Pin name PIN function
1 ADJ Output voltage adjust pin
2 ITH GmAmp output pin/Connected phase compensation capacitor
3 EN Enable pin(Active High)
4 GND Ground
5 PGND Nch FET source pin
6 SW Pch/Nch FET drain output pin
7 PVCC Pch FET source pin
8 VCC VCC power supply input pin
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
17/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Information on advantages
Advantage 1：Offers fast transient response with current mode control system.
Voltage drop due to sudden change in load was reduced by about 40%.
Fig.84 Comparison of transient response
Advantage 2： Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLMTM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance
MOS FETs incorporated as power transistor.
ON resistance of P-channel MOS FET: 0.2～0.35 (Typ.)
ON resistance of N-channel MOS FET: 0.15～0.25 (Typ.)
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3：・Supplied in smaller package due to small-sized power MOS FET incorporated.
(3 package like MOSP8, HSON8, SON008V5060)
・Allows reduction in size of application products
Reduces a mounting area required.
Fig.86 Example application
・Output capacitor Co required for current mode control: 10 F ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7 H inductor
(BD9110NV:Co=22µF, L=2.2µH)
DC/DC
Convertor
Controller
RITH
L
Co
VOUT
CITH
VCC
Cin
10mm
15mm
RITH
CITH
CIN
CO
L
VOUT
IOUT
228mV
VOUT
IOUT
140mV
Conventional product (VOUT of which is 3.3 volts) BD9109FVM (Load response IO=100mA→600mA)
0.001 0.01 0.1 1
0
50
100
①
②
PWM
SLLM
M
①inprovement by SLLM system
②improvement by synchronous rectifier
Efficiency [%]
Output current Io[A]
Fig.85 Efficiency
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
18/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Operation
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching
regulator that achieves faster transient response by employing current mode PWM control system. It utilizes switching
operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLMTM (Simple Light Load Mode)
operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the
power dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a
N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp)
receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback
control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the
P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control
repeat this operation.
・SLLMTM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching
pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear
operation without voltage drop or deterioration in transient response during the mode switching from light load to
heavy load or vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching
is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces
the switching dissipation and improves the efficiency.
Fig.87 Diagram of current mode PWM control
OSC
Level
Shift Driver
Logic
RQ
S
IL
SW
ITH
Current
Comp
Gm Amp.
SET
RESET
FB
Load
SENSE
VOUT
VOUT
Fi
g.
88
PWM
sw
i
tc
hi
ng t
i
m
i
ng c
h
art
Fi
g.
89
SLLM
sw
i
tc
hi
ng t
i
m
i
ng c
h
art
Curren
t
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
IL(AVE)
VOUT(AVE)
SENSE
FB
Curren
t
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
0A
VOUT(AVE)
SENSE
FB
IL
Not switching
IL
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
19/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Description of operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited
during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 F (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width
of 50～300 mV (Typ.) is provided to prevent output chattering.
*Soft Start time(typ.)
Fig.90 Soft start, Shutdown, UVLO timing chart
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit
Tss 3 1 1 5 1 msec
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the
fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO.
*Timer Latch time (typ.)
Fig.91 Short-current protection circuit with time delay timing chart
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Unit
TLATCH 1 1 2 1 2 msec
※ In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage fall below
2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120HFN), output voltage will hold turned OFF.
Hysteresis 50～300mV
Ts s Ts s Ts s
Soft start
Standby mode Operating mode
Standby
mode Operating mode
Standby
mode Operating mode Standby mode
UVLO
EN UVLO
UVLO
VCC
EN
VOU
T
1msec
Output OFF
latch
EN
VOUT
Limi
t
IL
Standby
mode Operating mode
Standby
mode Operating mode
EN Timer latch EN
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
20/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Switching regulator efficiency
Efficiency may be expressed by the equation shown below:
Efficiency may be improved by reducing the switching regulator power dissipation factors PD as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET：PD(I2R)
2) Gate charge/discharge dissipation：PD(Gate)
3) Switching dissipation：PD(SW)
4) ESR dissipation of capacitor：PD(ESR)
5) Operating current dissipation of IC：PD(IC)
1)PD(I2R)=IOUT2×(RCOIL+RON) (RCOIL[]：DC resistance of inductor, RON[]：ON resistance of FETIOUT[A]：Output current.)
2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET,f[H]：Switching frequency,V[V]：Gate driving voltage of FET)
4)PD(ESR)=IRMS2×ESR (IRMS[A]：Ripple current of capacitor,ESR[]：Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]：Circuit current.)
●Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
If VCC=5V, VOUT=3.3V, RCOIL=0.15, RONP=0.35, RONN=0.25
IOUT=0.8A, for example,
D=VOUT/VCC=3.3/5=0.66
RON=0.66×0.35+(1-0.66)×0.25
=0.231+0.085
=0.316[]
P=0.82×(0.15+0.316)
≒298[mV]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
= VOUT×IOUT
Vin×Iin
×100[%]= POUT
Pin
×100[%]= POUT
POUT+PD
×100[%]
Vin2×CRSS×IOUT×f
IDRIVE
3)PD(SW)= (CRSS[F]：Reverse transfer capacitance of FET、IDRIVE[A]：Peak current of gate.)
0 25 50 75 100 125 150
0
200
400
600
800
1000
85
②387.5mW
①587.4mW
①mounted on glass epoxy PCB
j-a=212.8℃/W
②Using an IC alone
j-a=322.6℃/W
Power dissipation:Pd [mW]
Ambient temperature:Ta [℃]
Fig.92 Thermal derating curve
(MSOP8)
Ambient temperature:Ta [℃]
0 25 50 75 100 125 150
0
0.5
1.0
1.5
②0.64W
①0.90W
Power dissipation:Pd [W]
Ambient temperature:Ta [℃]
Fig.94 Thermal derating curve
(SON008V5060)
① for SON008V5060
ROHM standard 1layer board
j-a=138.9℃/W
② Using an IC alone
j-a=195.3℃/W
0 25 50 75 100 125 150
0
0.5
1.0
1.5
②0.63W
①1.15W
Power dissipation:Pd [W]
Fig.93 Thermal derating curve
(HSON8)
① mounted on glass epoxy PCB
j-a=133.0℃/W
② Using an IC alone
j-a=195.3℃/W
85 105
P=IOUT2×(RCOIL+RON)
RON=D×RONP+(1-D)×RONN
D：ON duty (=VOUT/VCC)
RCOIL：DC resistance of coil
RONP：ON resistance of P-channel MOS FET
RONN：ON resistance of N-channel MOS FET
IOUT：Output current
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
21/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Selection of components externally connected
1. Selection of inductor (L)
* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5V, VOUT=3.3V, f=1MHz, IL=0.3×0.8A=0.24A, for example,(BD9109FVM)
* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be
determined with consideration on the requirements of equation (5):
In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms,
Inappropriate capacitance may cause problem in startup. A 10 F to 100 F ceramic capacitor is recommended.
3. Selection of input capacitor (Cin)
A low ESR 10F/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
The inductance significantly depends on output ripple current.
A
s seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
IL=
(VCC-VOUT)×VOUT
L×VCC×f [A]・・・
(
1
)
A
ppropriate ripple current at output should be 30% more or less of the
maximum output current.
IL=0.3×IOUTmax. [A]・・・(2)
L=
(VCC-VOUT)×VOUT
IL×VCC×f
[
H
]
・・・
(
3
)
(IL: Output ripple current, and f: Switching frequency)
Output capacitor should be selected with the consideration on the stability region
and the equivalent series resistance required to smooth ripple voltage.
Out
p
ut ri
pp
le volta
g
e is determined b
y
the e
q
uation
(
4
)
：
VOUT=IL×ESR [V]・・・(4)
(IL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
*Rating of the capacitor should be determined allowing sufficient margin
against output voltage. Less ESR allows reduction in output ripple voltage.
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage. The
ripple current IRMS is given by the equation (6):
IRMS=IOUT×
VOUT
(
VCC-VOUT
)
VCC [A]・・・
(
6
)
√
When VCC is twice the Vout, IRMS=
IOUT
2
Fig.96 Output capacitor
(
5-3.3
)
×3.3
0.24×5×1M
L= =4.675 4.7[H]
< Worst case > IRMS(max.)
If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM)
IRMS=0.8×
3.3
(
5-3.3
)
5=0.38
[
ARMS
]
√
Co≦ TSS×(Ilimit-IOUT)
VOUT ・・・
(
5
)
Tss: Soft-start time
Ilimit: Over current detection level, 2A(Typ)
Fig.97 Input capacitor
IL
Fig.95 Output ripple current
IL
VCC
IL
L
Co
VOUT
VCC
L
Co
VOUT
ESR
Co≦ 1m×(2-0.8)
3.3
≒364 [F]
VCC
L Co
VOUT
Cin
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
22/28
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© 2009 ROHM Co., Ltd. All rights reserved.
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency
area due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the
high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero
to the power amplifier output with C and R as described below to cancel a pole at the power amplifier.
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
5. Determination of output voltage
The output voltage VOUT is determined by the equation (7):
VOUT=(R2/R1+1)×VADJ・・・(7) VADJ: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
Adjustable output voltage range： 1.0V～1.5V/ BD9107FVM, BD9120HFN
1.0V～2.5V/BD106FVM, BD9110NV
Use 1 k～100 k resistor for R1. If a resistor of the resistance higher than
100 k is used, check the assembled set carefully for ripple voltage etc.
Fig.101 Determination of output voltage
Fig.98 Open loop gain characteristics
Fig.99 Error amp phase compensation characteristics
fp=
2×RO×CO
1
fz(ESR)=2×ESR×CO
1
Pole at power amplifie
r
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
fp(Min.)=2×ROMax.×CO
1[Hz]with lighter load
fp(Max.)=2×ROMin.×CO
1[Hz]with heavier load
Zero at power amplifie
r
Increasing capacitance of the output capacitor lowers the pole
frequency while the zero frequency does not change. (This
is because when the capacitance is doubled, the capacitor
ESR reduces to half.)
fz(Amp.)=2×RITH.×CITH
1
GND,PGND
SW
VCC,PVCC
EN
VOUT
ITH
VCC
VOUT
Cin
RITH
CITH
L
ESR
CO
RO
VOUT
Fig.100 Typical application
fz(Amp.)= fp(Min.)
2×RITH×CITH
1 = 2×ROMax.×CO
1
SW
6
1
A
DJ
L
Co R2
R1
Output
Gain
[dB]
Phase
[deg]
A
0
0
-90
A
0
0
-90
fz(Amp.)
fp(Min.)
fp(Max.)
fz(ESR)
IOUTMin. IOUTMax.
Gain
[dB]
Phase
[deg]
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
23/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN Cautions on PC Board layout
Fig.102 Layout diagram
●BD9110NV Cautions on PC Board layout
Fig.103 Layout diagram
① For the sections drawn with heavy line, use thick conductor pattern as short as possible.
② Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to
the pin PGND.
③ Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※ The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package.
The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
Table1. [BD9106FVM]
Symbol Part Value Manufacturer Series
L Coil 4.7H Sumida CMD6D11B
TDK VLF5014AT-4R7M1R1
CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A
CO Ceramic capacitor 10F Kyocera CM316X5R106K10A
CITH Ceramic capacitor 750pF murata GRM18series
RITH Resistance
VOUT=1.0V 18k ROHM MCR10 1802
VOUT=1.2V 22k ROHM MCR10 2202
VOUT=1.5V 22k ROHM MCR10 2202
VOUT=1.8V 27k ROHM MCR10 2702
VOUT=2.5V 36k ROHM MCR10 3602
8
7
6
5
VOUT
/
ADJ
ITH
EN
GND
VCC
PVCC
SW
PGND
CO
GND
VOUT
VCC
L①
③
EN
RITH
CITH
CIN
②
1
2
3
4
A
DJ
VCC
ITH
GND
EN
PVCC
SW
PGND
VCC
RITH
GND
Co
CIN
VOUT
EN
L
CITH
③
①
②
1
2
3
4
8
7
6
5
R2
R1
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
24/28
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© 2009 ROHM Co., Ltd. All rights reserved.
Table2. [BD9107FVM]
Symbol Part Value Manufacturer Series
L Coil 4.7H Sumida CMD6D11B
TDK VLF5014AT-4R7M1R1
CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A
CO Ceramic capacitor 10F Kyocera CM316X5R106K10A
CITH Ceramic capacitor 1000pF murata GRM18series
RITH Resistance
VOUT=1.0V 4.3k ROHM MCR10 4301
VOUT=1.2V 6.8k ROHM MCR10 6801
VOUT=1.5V 9.1k ROHM MCR10 9101
VOUT=1.8V 12k ROHM MCR10 1202
Table3. [BD9109VM]
Symbol Part Value Manufacturer Series
L Coil 4.7H Sumida CMD6D11B
TDK VLF5014AT-4R7M1R1
CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A
CO Ceramic capacitor 10F Kyocera CM316X5R106K10A
CITH Ceramic capacitor 330pF murata GRM18series
RITH Resistance 30k ROHM MCR10 3002
Table4. [BD9110NV]
Symbol Part Value Manufacturer Series
L Coil 2.2H TDK LTF5022T-2R2N3R2
CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A
CO Ceramic capacitor 22F Kyocera CM316B226K06A
CITH Ceramic capacitor 1000pF murata GRM18series
RITH Resistance
VOUT=1.0V
12k ROHM MCR10 1202
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
Table5. [BD9120HFN]
Symbol Part Value Manufacturer Series
L Coil 4.7H Sumida CMD6D11B
TDK VLF5014AT-4R7M1R1
CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A
CO Ceramic capacitor 10F Kyocera CM316X5R106K10A
CITH Ceramic capacitor 680pF murata GRM18series
RITH Resistance
VOUT=1.0V 8.2k ROHM MCR10 8201
VOUT=1.2V 8.2k ROHM MCR10 8201
VOUT=1.5V 4.7k ROHM MCR10 4701
*The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on
your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing
the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier
diode established between the SW and PGND pins.
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
25/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●I/O equivalence circuit
【BD9106FVM, BD9107FVM, BD9109FVM】
【BD9110NV, BD9120HFN】
Fig.104 I/O equivalence circuit
VCC
EN
10kΩ
・EN pin ・SW pin PVCC
SW
PVCC PVCC
VCC
A
DJ
10kΩ
・ADJ pin (BD9106FVM, BD9107FVM)
VCC
VOUT
10kΩ
・VOUT pin (BD9109FVM)
VCC
ITH
VCC
・ITH pin
EN
10kΩ
・EN pin ・SW pin PVCC
SW
PVCC PVCC
ITH
・ITH pin (BD9120HFN)
VCC
ITH
・ITH pin (BD9110NV)
VCC
・ADJ pin
A
DJ
10kΩ
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
26/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Notes for use
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed
the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of
fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output
and power supply or GND may also cause breakdown.
4.Operation in Strong electromagnetic field}
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
5. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not
be used thereafter for any operation originally intended.
6. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
7. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below. This P-layer and
the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 59:
○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or
GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among
circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in
such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Fig.105 Simplified structure of monorisic IC
8. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of
the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(Pin A)
P+ P+
N N
N
P
P substrate Parasitic diode
GND GND
Parasitic diode or transistor
N
P
N
C
(Pin B) B
E
GND
P+ P+
N
N
Resistance Transistor (NPN)
(Pin B)
C
E
B
GND
(Pin A)
GND
P substrate
Parasitic diode
Parasitic diode or transistor
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
27/28
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© 2009 ROHM Co., Ltd. All rights reserved.
●Ordering part number
B D 9 1 1 0 N V - E 2
Part No.
BD
Part No.
9110
9120
9106 ,9107,9109
Package
NV : SON008V5060
HFN:MSOP8
FVM:HSON8
Packaging and forming specification
E2: Embossed tape and reel
(SON008V5060,)
TR: Embossed tape and reel
(
MSOP8
,
HSON8
)
(Unit : mm)
MSOP8
0.08 S
S
4.0±0.2
8
3
2.8±0.1
1
6
2.9±0.1
0.475
4
57
(MAX 3.25 include BURR)
2
1PIN MARK
0.9MAX
0.75±0.05
0.65
0.08±0.05
0.22 +0.05
–0.04
0.6±0.2
0.29±0.15
0.145 +0.05
–0.03
4°
+6°
−4°
Direction of feed
Reel
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
(Unit : mm)
HSON8
S
0.08
M
0.1 S
0.32±0.1
0.65
0.02+0.03
–0.02
0.6MAX
8765
4312
2.8±0.1
2.9±0.1
3.0±0.2
(MAX 3.1 include BURR)
0.475
1PIN MARK
5
4
6
32
7
1
8
(0.2) (1.8)
(0.15)
(2.2)
(0.3)
(0.45)
(0.2)
(0.05)
0.13+0.1
–0.05
Direction of feed
Reel
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN
Technical Note
28/28
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© 2009 ROHM Co., Ltd. All rights reserved.
(Unit : mm)
SON008V5060
0.08 S
S
765
4321
8
(0.22)
C0.25
1PIN MARK
+0.03
-
0.02
0.02
0.59 0.4+0.05
-
0.04
5.0±0.15
6.0±0.15
4.2±0.1
3.6±0.1
0.8±0.1 1.0MAX
1.27
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2000pcs
E2
()
Direction of feed
Reel 1pin
R0039
A
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
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consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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The Products specied in this document are intended to be used with general-use electronic
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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