F3L300R07PE4P EconoPACKTM4/IGBT4and4diodeand pressFIT/ EconoPACKTM4modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandPressFIT/ pre-appliedThermalInterfaceMaterial /PreliminaryData J VCES = 650V IC nom = 300A / ICRM = 600A * 3 TypicalApplications * 3-level-applications * 650V * Tvjop * Tvjop=150C * IGBT4 * VCEsat ElectricalFeatures * Increasedblockingvoltagecapabilityupto650V * ExtendedoperatingtemperatureTvjop * Tvjop=150C * TrenchIGBT4 * VCEsatwithpositivetemperaturecoefficient * 4kVAC1 * * NTC * * * MechanicalFeatures * 4kVAC1mininsulation * Highmechanicalrobustness * IntegratedNTCtemperaturesensor * Isolatedbaseplate * Standardhousing * Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code Datasheet www.infineon.com ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.0 2016-10-24 F3L300R07PE4P PreliminaryData IGBT-/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C Implementedcollectorcurrent VCES 650 V ICN 300 A DC ContinuousDCcollectorcurrent TH = 25C, Tvj max = 175C IC nom 280 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 280 A, VGE = 15 V IC = 280 A, VGE = 15 V IC = 280 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C VCE sat typ. max. 1,50 1,65 1,70 1,75 V V V 5,80 6,50 V Gatethresholdvoltage IC = 4,80 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 V ... +15 V QG 3,00 C Internalgateresistor Tvj = 25C RGint 1,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,5 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,57 nF Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA VGEth Turn-ondelaytime,inductiveload IC = 280 A, VCE = 300 V VGE = 15 V RGon = 2,0 Tvj = 25C Tvj = 125C Tvj = 150C Risetime,inductiveload IC = 280 A, VCE = 300 V VGE = 15 V RGon = 2,0 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offdelaytime,inductiveload IC = 280 A, VCE = 300 V VGE = 15 V RGoff = 2,0 Tvj = 25C Tvj = 125C Tvj = 150C Falltime,inductiveload IC = 280 A, VCE = 300 V VGE = 15 V RGoff = 2,0 Tvj = 25C Tvj = 125C Tvj = 150C Turn-onenergylossperpulse IC = 280 A, VCE = 300 V, LS = 30 nH Tvj = 25C VGE = 15 V, di/dt = 3300 A/s (Tvj = 150C) Tvj = 125C RGon = 2,0 Tvj = 150C Turn-offenergylossperpulse 5,00 0,09 0,11 0,12 s s s 0,05 0,06 0,06 s s s 0,49 0,52 0,53 s s s 0,05 0,07 0,07 s s s Eon 1,30 1,90 2,40 mJ mJ mJ IC = 280 A, VCE = 300 V, LS = 30 nH Tvj = 25C VGE = 15 V, du/dt = 3300 V/s (Tvj = 150C) Tvj = 125C RGoff = 2,0 Tvj = 150C Eoff 13,0 16,0 17,0 mJ mJ mJ SCdata VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE *di/dt ISC 1500 1200 A A Thermalresistance,junctiontoheatsink IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial tP 10 s, Tvj = 25C tP 10 s, Tvj = 150C Temperatureunderswitchingconditions Datasheet td on tr td off tf RthJH Tvj op 2 0,250 K/W -40 150 C V2.0 2016-10-24 F3L300R07PE4P PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 650 V Implementedforwardcurrent IFN 300 A DC ContinuousDCforwardcurrent IF 280 A IFRM 600 A It 6000 5600 Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C /CharacteristicValues min. As As typ. max. 1,90 VF 1,50 1,45 1,40 IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 130 190 200 A A A Recoveredcharge IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 9,00 20,0 23,0 C C C Reverserecoveryenergy IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 3,25 5,90 6,80 mJ mJ mJ Thermalresistance,junctiontoheatsink /Diode/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH Forwardvoltage IF = 280 A, VGE = 0 V IF = 280 A, VGE = 0 V IF = 280 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions V V V 0,369 K/W Tvj op -40 150 C /Diode,3-Level /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 650 V Implementedforwardcurrent IFN 300 A DC ContinuousDCforwardcurrent IF 280 A IFRM 600 A It 6000 5600 Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C /CharacteristicValues min. As As typ. max. 1,90 VF 1,50 1,45 1,40 IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C Tvj = 150C IRM 130 190 200 A A A Recoveredcharge IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C Tvj = 150C Qr 9,00 20,0 23,0 C C C Reverserecoveryenergy IF = 280 A, - diF/dt = 3300 A/s (Tvj=150C) Tvj = 25C VR = 300 V Tvj = 125C Tvj = 150C Erec 3,25 5,90 6,80 mJ mJ mJ Thermalresistance,junctiontoheatsink /Diode/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH Forwardvoltage IF = 280 A, VGE = 0 V IF = 280 A, VGE = 0 V IF = 280 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions Datasheet Tvj op 3 V V V 0,369 K/W -40 150 C V2.0 2016-10-24 F3L300R07PE4P PreliminaryData NTC-/NTC-Thermistor /CharacteristicValues min. typ. max. Ratedresistance TNTC = 25C R100 DeviationofR100 TNTC = 100C, R100 = 493 Powerdissipation TNTC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 5,00 R/R -5 P25 k 5 % 20,0 mW Specificationaccordingtothevalidapplicationnote. /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 25,0 12,5 mm Clearance -/terminaltoheatsink -/terminaltoterminal 11,0 7,0 mm > 200 Comperativetrackingindex CTI min. Strayinductancemodule LsCE Storagetemperature Tstg Maximumbaseplateoperationtemperature typ. 45 -40 TBPmax Mountingtorqueformodulmounting M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 Weight G max. 400 nH 125 C 125 C 6,00 Nm 6,0 Nm g Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 Datasheet 4 V2.0 2016-10-24 F3L300R07PE4P PreliminaryData IGBT-(Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT-(Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 560 560 Tvj = 25C Tvj = 125C Tvj = 150C 480 480 440 440 400 400 360 360 320 320 280 280 240 240 200 200 160 160 120 120 80 80 40 40 0 0,0 0,5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 520 IC [A] IC [A] 520 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 IGBT-(Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT-(Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=2,RGoff=2,VCE=300V 560 50 Tvj = 25C Tvj = 125C Tvj = 150C 520 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 45 480 440 40 400 35 360 30 E [mJ] IC [A] 320 280 25 240 20 200 160 15 120 10 80 5 40 0 5 Datasheet 6 7 8 9 VGE [V] 10 11 0 12 5 0 80 160 240 320 IC [A] 400 480 560 V2.0 2016-10-24 F3L300R07PE4P PreliminaryData IGBT-(Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=280A,VCE=300V IGBT- transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 35 1 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 30 ZthJH : IGBT 25 E [mJ] ZthJH [K/W] 20 15 0,1 10 5 0 i: 1 2 3 4 ri[K/W]: 0,018 0,0681 0,133 0,0309 i[s]: 0,000644 0,0248 0,108 0,813 0 2 4 6 8 10 12 RG [] 14 16 18 0,01 0,001 20 IGBT-RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=2,Tvj=150C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 700 560 IC, Chip IC, Modul short path IC, Modul long path Tvj = 25C Tvj = 125C Tvj = 150C 520 600 480 440 500 400 360 320 IF [A] IC [A] 400 300 280 240 200 200 160 120 100 80 40 0 0 Datasheet 100 200 300 400 VCE [V] 500 600 0 700 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 V2.0 2016-10-24 F3L300R07PE4P PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=2,VCE=300V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=280A,VCE=300V 10 10 Erec, Tvj = 125C Erec, Tvj = 150C 9 8 8 7 7 6 6 E [mJ] E [mJ] 9 5 5 4 4 3 3 2 2 1 1 0 0 80 160 Erec, Tvj = 125C Erec, Tvj = 150C 240 320 IF [A] 400 480 0 560 Diode transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 2 4 6 8 10 12 RG [] 14 16 18 20 1,8 2,0 typical) forwardcharacteristicofDiode,3-Level(typical) IF=f(VF) 1 560 ZthJH : Diode Tvj = 25C Tvj = 125C Tvj = 150C 520 480 440 400 320 IF [A] ZthJH [K/W] 360 0,1 280 240 200 160 120 80 i: 1 2 3 4 ri[K/W]: 0,0289 0,0947 0,193 0,0524 i[s]: 0,000362 0,0192 0,0861 0,662 0,01 0,001 Datasheet 0,01 0,1 t [s] 1 40 0 10 7 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 V2.0 2016-10-24 F3L300R07PE4P PreliminaryData transientthermalimpedanceDiode,3-Level ZthJH=f(t) NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJH : Diode Rtyp R[] ZthJH [K/W] 10000 0,1 1000 i: 1 2 3 4 ri[K/W]: 0,0289 0,0947 0,193 0,0524 i[s]: 0,000362 0,0192 0,0861 0,662 0,01 0,001 Datasheet 0,01 0,1 t [s] 1 10 100 8 0 20 40 60 80 100 TNTC [C] 120 140 160 V2.0 2016-10-24 F3L300R07PE4P PreliminaryData /Circuitdiagram J /Packageoutlines Datasheet 9 V2.0 2016-10-24 TrademarksofInfineonTechnologiesAG HVICTM,IPMTM,PFCTM,AU-ConvertIRTM,AURIXTM,C166TM,CanPAKTM,CIPOSTM,CIPURSETM,CoolDPTM,CoolGaNTM,COOLiRTM, CoolMOSTM,CoolSETTM,CoolSiCTM,DAVETM,DI-POLTM,DirectFETTM,DrBladeTM,EasyPIMTM,EconoBRIDGETM,EconoDUALTM, EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,GaNpowIRTM,HEXFETTM,HITFETTM,HybridPACKTM,iMOTIONTM, IRAMTM,ISOFACETM,IsoPACKTM,LEDrivIRTM,LITIXTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OPTIGATM,OptiMOSTM, ORIGATM,PowIRaudioTM,PowIRStageTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,StrongIRFETTM,SupIRBuckTM,TEMPFETTM,TRENCHSTOPTM,TriCoreTM,UHVICTM,XHPTM,XMCTM TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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