HEE Me) Relative efficiency aie ]. FyYPBIARKSYYAYTLAR O PUSS 6 0] BE. . MAT BIS3.2(L) x2.4(W) Xe. an)\ Be - BOX 4(H) 3. FYPVIVICKSTUYV E ADAMO. 4, U20 4AM. Br 1. CDPL-?-OF 12711 BR. 2. VTR,AXS-KEVTROF7F {with 3. FJQVE-FAIOWeRMH. 4. EOHOMERK. @ Features 1. Developed as a chip type SMD photo-tran- sistor for both right-anglie and upright uses 2, Small and square size, dimensions : 3.2 (L)x 2.4(W)X2.4(H)mm CHIP PHOTO-TRANSISTOR CITISENSOR 3. Automatic mounting by chip mounter avail- able 4. Reflow soldering availabie @ Application 1. Position detecting for compact disc in CD player 2. Position detecting for tape in VCR and portable VCR incorporated with camera 3. Position detecting for floppy disc in floppy 4. Position detecting for other equipment disc drive RH FITIAKRIYIAZAY CPT-182YUZz Surface Mountable Chip Type Photo-transistor CPT-182 Series MGR AEH/Maximum absolute rating (Ta=25'C) MEBaRIK/Code for Parts [ I ; 4q : _ ISB /item #233/Symbol | 7E#48/Ratin Hatz /Unit - . 7 Rtn CPT-182 S ~ rel-Co ILO4-LeySRBeE Vee 25 Vv ve Voltage between collector & emitter RO 7 ziseres | sae Tay9-ALI TOBE 82. Yop surface and righ Voltage between emitter & collector Meo angle heht reveling te ILO SBF /Collector current te 20 mA | eB E Type a element a ecu ee wee : Solin f ingic AL A4IBE/Collector dissipation Pe: : as mW | RABE Type of (810 et oo creme a cor \ Co PARC A RR E28) CC Visible-light-cutting | 00(F3 i /Operating temperature Top = 25~ +80 C | resin (standard) So oe a | & 1 SSRR/X: Transparent RTF a / Storage temperature Ts: Cc | R/x rans ol ~ - v #Uu2?/Non-cade : Bulk packing i LBS /TU: Taping upward MB HES HE /Electro-optical characteristics (Ta=25'C) : ie (TS: Taping sideways Ei/Item fom? | aeH/Conditions | MY! | MRR BAY | BE a ESEA/Light current lc Moe2V MEveoimw/om? 40 | 120 | 375) aA WARE 1B/Outine drawing Pe 7t/Collector dark current leo Voe=8V_ - 5 | 100 | nA eum aims aarstame ALAsY T=)S RAE ~ . - ~ Position of thie Resin Soicenne terminal Saturated voltage between collector & miter | Woetsan | IcIOOHA MEWOimBem | OS | OB | CIRBRE/Peak sensitive wave length | Ap* . 1 = | 950 - | am S3( KR EE/Spectral efficiency Le : 860~1090 nm SSH / WEA /Rise time! Tr | Veee5V koe2mA ~ | 6 Response Time | i77'0/Fall time Tt R.=1060 6 _ i --4 Ba /Unitimm | 4448) /Spectral width of half value) 41/2 : os SPORE /Tolerance +02 | * Mitt /Characteristics 1 Ev=$50n miRXIC KSA / Ey PX O-f TR ME/ 2 Standard for X type =Infrared radiance a at 956 nm we DRE Ta=25C) Spectral Efficiency Characteristics 5OU 800 1500 100 120G HR 4 inm} Wave length CL-200IR? CURR A Stott Fert Cambined Characteristics with CL-200iR 100 iC imAy a imm) ic-E BRM ic-E Characteristics ms SamWean 100 706 BOG 500 AS A006 = 300 206 fo-Vee 266 te tt-RE BPPE tetf-RL Characteristics RL KO: k-Wor PSE Characteristics fee-Ta Characteristics Frequency response SmaW rome lacs Ta FRE ALR BA Vee= BV =1000 150 be XN (dB) | i 80 F Lighting source : i of CL-2001R 50 1 L 4 - Q 18) 5O 75 iO Ta (Ch FKHzi oe ite ieee EDR Directive Characteristics Measuring circuit for response time reclive CNareacrenshes 2010) 8" 10 3a 40" a y ra AD nee poe Vor ingot | er veoci-2o0r bp [Ts our RL tpt ar 90% ok OO 10% Thame nie. tr APPS a ah SR Tao pulse Dutput puise